48 results about "Cr doped" patented technology

A perpendicular magnetic recording medium having a substrate, a Cr-doped Fe-alloy-containing underlayer containing about 8 to 18 at % Cr and a perpendicular recording magnetic layer, and a process for improving corrosion resistance of the recording medium and for manufacturing the recording medium are disclosed.

Provided is a gas sensor comprising a gas-sensitive layer consisting of nickel oxide (NiO) doped with chrome (Cr) so as to selectively detect methylbenzene gas. The gas sensor, according to the present invention, has a gas-sensitive layer consisting of Cr-doped NiO. The gas sensor exhibits superior selectivity for methylbenzene gas when compared to other gases. The gas sensor can be easily and mass produced according to the production method of the present invention and is not affected by the microstructures of the material forming the gas-sensitive layer. The present invention relates to a gas sensor exhibits a negligible sensitivity of benzene, formaldehyde, and alcohol and exhibits significantly high selectivity and sensitivity of methylbenzene gas such as xylene and toluene when the NiO sensor material with a hierarchical structure favorable to gas dispersion and response is doped with Cr.

The invention relates to a method for preparing a Cr doped ZnO-based diluted magnetic semiconductor film material, belonging to the preparation field of novel semiconductor spintronics device materials. The method adopts double targets cosputtering of chromium and zinc oxide, wherein the background vacuum degree of the system is 10<-5>Pa-10<-3>Pa; high-purity argon is used as working gas in the sputtering process; the flow rate of the high-purity argon is 5-15 cm<3> / min; the working gas pressure is 10<-2>-10<-1>Pa in the sputtering process; and the distance between a target material and a basal body is 35-70 mm. Ultrasonic cleaning is carried out on the basal body, oxide and other impurities of the surface of the basal body are removed, and the ZnO-based diluted magnetic semiconductor film materials with different doping concentrations are obtained through changing different target powers. The method has simple preparation process and high deposition rate and can obtain the diluted magnetic semiconductor film material with room-temperature ferromagnetism, high Curie temperature and controllable performance, thereby having important research value and wide application prospect.

The invention discloses a method for preparing a corrosion-resistant antifriction Cr-doped DLC (diamond-like carbon) coating. The method comprises the steps of placing a pretreated substrate on a rotating stand rod of arc and magnetron sputtering composite deposition equipment, taking a post arc Cr target as a Cr source and three pairs of flat targets C targets as C sources, and installing the three pairs of flat targets C on the inner wall of a furnace body in an opposite manner; adopting high-purity Ar as a main ionization gas to guarantee an effective glow discharge process; and adopting high-purity N2 as a reacting gas, ionizing the reacting gas and combining the reacting gas with Cr and C elements to deposit on the surface of the substrate so as to form the Cr-doped DLC coating. The prepared Cr-doped DLC coating has a smooth and compact surface, hardness of 20 GPa, binding force with the substrate of 80N, coating thickness of 2.0 micrometers, and excellent corrosion resistance and antifriction performance.

The Cr-doped graphite coating consists of Cr in 3-8 wt% and amorphous graphite, has thickness of 1.0-1.5 microns, and possesses hardness as high as 1500-2200 HV, frication coefficient as low as 0.08-0.12 and self-lubricating function. The Cr-doped graphite coating is prepared with one four-target closed field unequilibrated magnetically controlled sputtering equipment and through the steps of vacuumizing, ion bombardment to clean, coating, etc. The process of preparing antifriction Cr-doped graphite coating is simple, stable and able to making high precision antifriction coating.

In a second harmonic, single-mode laser having a resonator including a Cr-doped fluoride laser crystal, first and second wavelength-selecting elements and a nonlinear optical crystal between a pair of laser mirrors, a wavelength-selecting width of the first wavelength-selecting element is {fraction (1 / 30)} or less of that of the second wavelength-selecting element, the first wavelength-selecting element is provided with a reflection coating having a reflectivity of 10-30% to the oscillated laser beam, such that the wavelength selection width of the first wavelength-selecting element is 0.02-0.03 nm, a wavelength interval in the oscillation wavelength range of the first wavelength-selecting element is 0.8-1.3 nm, and a wavelength selection width of the second wavelength-selecting element is 1.0-1.6 nm.

The invention discloses a ternary composite visible light photocatalyst, a preparation method and application thereof. The catalyst is an Ag3PO4 / reduced graphene oxide / La and Cr-doped SiTiO3 ternary compound. Ag3PO4 is coated by the reduced graphene oxide; and La and Cr-doped SrTiO3 particles are distributed outside the reduced graphene oxide. The photocatalyst prepared by invention is high in catalytic activity and strong in stability, has ultrahigh degradation efficiency for dyes such as rhodamine B, and can carry out efficient degradation directly under natural light.

The invention relates to a preparation method of chromium-doped titanium nitride magnetic semiconductor polycrystal film. An ultrahigh vacuum facing target magnetron sputtering coating machine is adopted, a pair of Ti targets of which the purity is 99.99% is installed on an opposite target head, and a Cr sheet is put on the surface of the Ti target; facing target magnetron sputtering equipment is started to successively start a first-stage mechanical pump and a second-stage molecular pump for vacuumizing until the back vacuum degree of a sputtering chamber is 2*10-4 Pa; mixed gas of Ar and N2 is led into the vacuum chamber to keep the vacuum degree to 1 Pa; a sputtering power supply is started to apply 0.3A of current and about 500V of DC voltage on a pair of Ti targets to cause sputtering current and voltage to be stable; after sputtering, the sputtering gas Ar and N2 are stopped to be led in, a gate valve is totally opened to continue vacuumizing, and the vacuum system is closed; the vacuum chamber is opened to take out the sample. Compared with Cr-doped TiN films prepared with other methods, the film prepared with the invention has room temperature ferromagnetism; the adopted method is simple and practical and is favorable for popularizing in industrial production.

The invention provides a Cr-doped Ge2Sb2Te5 phase change material, a phase change memory unit and a preparation method. The ingredient general formula of the Cr-doped Ge2Sb2Te5 phase change material is CrxGe2Sb2Te5, wherein x is an atomic ratio of the Cr element, and x is more than 0.5 and less than 1.5. Cr doping in Ge2Sb2Te5 is carried out, Cr is a kind of metal with an extremely high melting point, heat stability of a phase change material can be raised, Cr can form bonds with Ge, Sb and Te, so segregation is avoided effectively. Under action of external energy, the Cr-doped Ge2Sb2Te5 phase change material can achieve reversible conversion between high resistance state and low resistance state, and the resistance value ratio of the high resistance state to the low resistance state can reach about two orders of magnitudes. When the phase change material is employed as a memory media of a phase change memory, the phase change memory unit has advantages of fast phase change speed, low write operation current and the like, and high temperature data retentivity and reliability of the device are raised greatly. The phase change memory employing the phase change memory unit structure has advantages of high speed, low power consumption, good data retentivity and the like.

The invention provides a method for preparing a chromium-doped titanium dioxide (TiO2)(CrxTi<1-X>O2) room-temperature ferromagnetic film, which belongs to the field of the preparation of the novel semiconductor spin electric devices. In the method, a Cr-doped titanium dioxide sol is first prepared adopting the sol-gel method and the sol is rotationally coated on a silicon substrate to form a CrxTi<1-X>O2 sol-gel film. The CrxTi<1-X>O2 sol-gel film has weak ferromagnetic characteristic at the room temperature after being annealed and crystallized in the air atmosphere; the CrxTi<1-X>O2 film has increased ferromagnetic characteristic after being secondarily annealed in the atmosphere in which the hydrogen is contained or under a vacuum environment. The adoption of the invention can prepare the CrxTi<1-X>O2 film having favorable room-temperature ferromagnetism.

The invention discloses a coke oven flue gas denitration catalyst and a preparation method thereof. The preparation method utilizes ammonium metavanadate as an active precursor, chromium nitrate as an auxiliary agent and oxalic acid and hydrochloric acid as reducing agents, and utilizes phosphoric acid to adjust and control the surface acidity of an active component. The preparation method comprises stirring, water bath heating, drying, calcining to obtain a Cr-doped oxyvanadium phosphate active component, adding the Cr-doped oxyvanadium phosphate active component and anatase TiO2 as a carrier with a specific surface area of greater than or equal to 250 m<2> / g into distilled water according to a ratio, carrying out stirring mixing, and carrying out water bath drying and calcining to obtain the catalyst. The catalyst utilizes phosphoric acid to adjust and control the surface acidity of the catalyst, and utilizes aid chromic nitrate to form an intercalation structure and promote formation of adjacent V<5+> and V<4+>. The catalyst has good low temperature denitration activity and strong SO2 and steam poisoning resistance and is suitable for industrial coke oven flue gas denitrification.

The invention relates to a preparation method of a Cr-doped TiO2 nanometer magnetic film with a room-temperature ferromagnetic effect, belonging to the technical field of a functionalized material. The preparation method comprises the steps of: by taking a TiO2 nanotube array thin film, prepared by but not limited to electrochemical anode oxidization technology, as a starting material, firstly carrying out CrNO3 aqueous solution soaked novel homogeneous-phase low-temperature Cr doping, then carrying out high-temperature annealing treatment, introducing composite vacancy and oxygen vacancy defects into the TiO2 nanotube array thin film, to obtain the TiO2 nanometer magnetic film which is high in room-temperature ferromagnetic property and controllability, low in cost, good in repeatability and can be manufactured in large scale. The preparation method has the characteristics of simple technology, low cost and good controllability and is suitable for mass production.

The invention discloses a Cr-doped perovskite structure halide near infrared light-emitting material and a preparation method thereof. The chemical composition is AB1-xX3:xCr<3+>, wherein A:B:X is equal to 1:1:3; A is at least one of Cs and Rb; B is at least one of Ag, Na, In, Ga and Pb; X is at least one of Cl and Br; and x is more than 0 and less than 100 mole percent. The invention also discloses the preparation method of the near infrared light-emitting material. The preparation method comprises the following steps: (1) weighing materials: weighing an A-containing compound, a B-containingcompound and a Cr-containing compound separately; and (2) grinding and uniformly mixing the materials and performing high-temperature calcining synthesis by a solid phase method. An emission band of the near infrared light-emitting material is positioned at 800 to 1400 nm and the emission peak is positioned at about 950 to 1050 nm. The preparation method is simple in process, low in raw material price, easy in large-scale technical promotion and is of great importance in research and development of near infrared fluorescent powder with wide spectrum emission. The light-emitting material can beused for manufacturing near infrared light-emitting devices and can be applied in the fields of spectral transformation, radioactive labeling, anti-faking and the like.

A Cr based negative electrode active material used on secondary lithium cell is oxide Cr2 ¿C xMxO3 of transition metal Cr doped with varied atoms as 0.001 not greater than x not greater than 1.5, M being li, Ag, mg, Ni, Cu, Zn, Sn, Co, Fe, Ca, Sr, Ti, Mn , Ce, Mo or Zr, material particle diameter being 50nm to 20 micron. The said material also can include conductive additives with the amount of 1 ¿C 20 wt% to said material, or can have carbon film shell on said material core, or can apply 20 ¿C 98 wt % ratio to mix with existing negative electrode material for being used as negative electrode material of secondary lithium cell.

The invention relates to a method for analyzing the content and distribution of Cr in a Cr-doped zinc sulfide crystalline material. According to the method, laser denudation inductively coupled plasma massspectrometry is utilized for analyzing the content and distribution of Cr in the Cr-doped zinc sulfide crystalline material. The method comprises the step that 1, the surface of a ZnS matrix material is plated with a Cr film to prepare a plurality of Cr:ZnS solid standard substances with different Cr contents, wherein Cr is evenly distributed in the Cr:ZnS solid standard substances; 2, the contents of Cr in the solid standard substances are obtained through inductively coupled plasma atomic emission spectrometry or the inductively coupled plasma massspectrometry, the response signal strength of Cr in the solid standard substances is measured through the laser denudation inductively coupled plasma massspectrometry, and a Cr standard work curve is drawn; 3, laser denudation inductively coupled plasma mass spectrometric detection is carried out on a Cr-doped zinc sulfide crystalline material sample to be detected, and the content and distribution of Cr in the sample to be detected are obtained.

There is disclosed a method for producing a Cr-doped FeCoB based target material that can be used efficiently in magnetron sputtering processes and has a low magnetic permeability. In the method for producing the target material, there are firstly provided raw-materials of two or more kinds of FeCoB based alloy powders which are different in composition from each other, wherein at least one of the FeCoB based alloy powders comprises Fe and Co in a total amount of 60 atom % or more such that Fe:Co atomic ratio is within a range of 70:30 to 40:60, and comprises Cr in an amount which is from 15 to 25 atom % greater than B. Then, the two or more kinds of the FeCoB based alloy powder are mixed and consolidated to form a target material.

The invention relates to a method for strengthening Cr-doped ZnO thin film ferromagnetism through Ar particle irradiation. A Cr-doped ZnO thin film is subjected to irradiation by a certain dosage of Ar particles; and the chemical formula of the Cr-doped ZnO thin film is Zn<1-x>Cr<x>O, wherein x is greater than 0 and less than or equal to 0.05. The method is stable and effective, and the ferromagnetism of a ZnO-based diluted magnetic semiconductor thin film can be obviously strengthened without damaging the material, so that development of a spinning electronic device based on a diluted magnetic semiconductor material can be facilitated.

The invention discloses a Cr-doped Bi2Fe4O9 multiferroic ceramic material and a preparation method thereof. The preparation method comprises the step of carrying out high temperature annealing treatment by adopting a citric acid-nitrate sol gel self-propagating combustion reaction method to obtain the multiferroic ceramic material with a molecular formula of Bi2Fe4(4-x)Cr4xO9 (x is more than 0 and less than or equal to 0.08). The Cr-doped Bi2Fe4O9 multiferroic ceramic material has a single-phase structure, low leakage current and multiferroic property at room temperature and magnetic property and ferroelectricity of the material can be regulated by changing the doping content of Cr; and a preparation technology is simple, cost is low, no reducing atmosphere is required, and environmental protection, no toxicity and no pollution are achieved.

The invention discloses a Cr-doped near-infrared long-afterglow luminescent material with a perovskite structure. A substrate material of the luminescent material is ABO3, wherein A is Ca, Sr or Ba, B is Sn or Ti, and 0.001 to 5 mol% of Cr<3+> is doped in the substrate material. The invention further discloses a preparation method for the near-infrared long-afterglow luminescent material. The method comprises the following steps: (1) separately weighing a compound containing A, a compound containing Ti and a compound containing Cr; and (2) after grinding and uniform mixing of the above compounds, presintering the obtained mixture in the air / reductive atmosphere, then grinding the mixture again and carrying out sintering in the air / reductive atmosphere for a plurality of hours. The near-infrared long-afterglow luminescent material prepared in the invention has an emission band located at 650 to 850 nm, an emission peak at 760 nm and afterglow time of as long as 100 min. The preparation method is simple, uses cheap raw materials and can easily realize large-scale technical popularization.

The invention relates to a modified catalyst for preparing acrylic acid by catalytically oxidizing propane, and in particular relates to a catalyst containing Mo, V, Te and Nb elements as active ingredients and metallic oxide with Cr element properly added, and a preparation method of the catalyst. The modified catalyst for preparing acrylic acid by catalytically oxidizing propane is an unsupported multi-ingredient metallic oxide and adopts the Mo, V, Te and Nb elements as the main active ingredients, and proper Cr element is added; the ingredient content in molar ratio is that CrxMo7.82V1.18Te0.94Nb10y (x ranges from 0 to 0.01). The catalyst is suitably used for preparing acrylic acid by selectively oxidizing propane; no processing is done before reaction, so that the process is simple, and the operation is convenient; the raw gas is basically composed of propane / oxygen at a (volume) ratio of 0.4 to 0.7; and the reaction is carried out at 380 to 420 DEG C at normal pressure along with the inlet flow of 0.3 to 0.65ml / h and air speed of 1,200 to 4,000ml / (g.h).

A perpendicular magnetic recording medium having a substrate, a Cr-doped Fe-alloy-containing underlayer containing about 8 to 18 at % Cr and a perpendicular recording magnetic layer, and a process for improving corrosion resistance of the recording medium and for manufacturing the recording medium are disclosed.

The invention discloses a technological method for preparing Cr-doped beta-FeSi2 films on the basis of a magnetron sputtering method. The technological method comprises the following steps: firstly, rinsing a Si sheet; secondly, depositing a Cr / Fe or Fe / Cr double-layer film or a Fe / Cr / Fe multi-layer film on the substrate of the Si sheet by using the magnetron sputtering method, wherein the content of Cr is controlled by regulating the sputtering rate of each layer and the thickness of the film layer, so that the content of Cr substituting Fe is 1% to 5%; and thirdly, annealing the Cr / Fe or Fe / Cr double-layer film or the Fe / Cr / Fe multi-layer film deposited by using the magnetron sputtering method in a vacuum annealing furnace, so as to obtain the Cr-doped beta-FeSi2 film. According to the XRD (X-ray diffraction) measurement, the crystal structure of beta-FeSi2 is not changed by doping.

The invention provides a method for preferred orientation growth of rutile titanium dioxide nanowire arrays on a crystal face (001). The method comprises the following steps of 1) preparing a Cr-dopedtitanium dioxide film as a seed layer; 2) placing the Cr-doped titanium dioxide film seed layer prepared in the step 1) in growth liquid, carrying out hydrothermal growing, and obtaining the preferred orientation growth rutile titanium dioxide nanowire arrays. The method is low in cost, simple in process requirement, good in repeatability and capable of achieving large-scale manufacturing, and the prepared titanium dioxide nanowire arrays have good preferential orientation growth and ultraviolet excited light emitting characteristics in the (001) direction.

The invention discloses a coating micro-drilling knife for printed circuit board machining. The coating micro-drilling knife comprises a micro-drilling knife base body, wherein a metallurgical bondinglayer, a transition layer, a main wear-resistant layer and a self-lubricating layer are sequentially attached to the micro-drilling knife base body from inside to outside; and the metallurgical bonding layer is a pure metal Cr layer, the transition layer is a nano multilayer formed by alternating Cr and Vn, the main wear-resistant layer is a nano multilayer formed by alternating DLC and VN, and the self-lubricating layer is a Cr-doped DLC layer. According to the coating structure, on one hand, the composite coating has relatively high performance; and on the other hand, the coating and the base body can have good adhesive force; and meanwhile, operability is simple and feasible. The coating micro-drilling knife has good film-base binding force, high hardness (greater than 20 GPa) and lowfriction coefficient (less than 0.3).

The invention relates to a Cr-doped heterojunction spin field effect transistor and a preparation method thereof. The preparation method comprises: selecting a sapphire substrate; growing a Ga2O3 epitaxial layer on the surface of the sapphire substrate by employing a MBE process; injecting Cr ions into the Ga2O3 epitaxial layer to form a source region and a drain region; fabricating an ohmic contact source electrode and a drain electrode on the surfaces of the source region and the drain region; growing a separating layer on the surface of the Ga2O3 epitaxial layer by employing a PECVD process; and fabricating a Schottky contact gate electrode on the surface of the Ga2O3 epitaxial layer to accomplish the preparation of the spin field effect transistor. According to the Cr-doped heterojunction spin field effect transistor and the preparation method, the doping concentration and the defect concentration in source-drain materials can be changed through adjustment of the dosage of ion implantation and the annealing time so that the spin polarizability of the materials at a room temperature is optimized.

The invention relates to a preparation method of Cr-doped alpha-Fe2O3 micro-nano crystal, which relates to the technical fields of nano powder preparation and application. The method comprises two processes of preparation of a reaction precursor and a hydrothermal reaction, and is characterized in that 1 to 1.8 g of Na2CrO4 and 1.4 g of FeCl2.4H2O are added to 50 mL of deionized water, after stirring and dissolving, 0-1.2 g of hydroxylamine hydrochloride is added, and then a mixture is heated in an oven at a constant temperature to obtain Cr-doped alpha-Fe2O3 micro-nano crystal of a spindle shape or a dumbbell shape. The method adopts FeCl2.4H2O and Na2CrO4 as raw materials, and successfully prepares Cr-doped alpha-Fe2O3 micro-nano crystal by a hydrothermal reaction method, and the dumbbell-shaped Cr-doped alpha-Fe2O3 micro-nano crystal is obtained by using hydroxylamine hydrochloride. The method has the advantages of simple process, low cost, environmental friendliness and controllable shape, and is conducive to popularization and application.

The invention discloses a preparation method of a Cr-doped DLC coating. The advantages that the smoothness, uniformity and density of a high-power pulse magnetron sputtering film layer are high are sufficiently utilized, and a bottom layer and transition layer design method is adopted in order to overcome the defects that the binding force of the DLC coating and the toughness of the film layer arepoor. By means of the unique film system design and mixing process, it is guaranteed that the binding force of the coating is improved, and it is also guaranteed that the coating deposition rate, thecoating density and the wear resisting and friction reducing performance are improved. The appearance of the Cr-doped DLC coating prepared through the method is ash black, the surface is smooth and dense, the hardness of the coating is 32 GPa, the film-matrix binding force reaches 72 N, and the coating thickness is 1.45 micrometers. The dry friction coefficient of the coating is 0.2. It is shownthat the Cr-doped DLC coating has good wear resisting and friction reducing performance.

There is disclosed a method for producing a Cr-doped FeCoB based target material that can be used efficiently in magnetron sputtering processes and has a low magnetic permeability. In the method for producing the target material, there are firstly provided raw-materials of two or more kinds of FeCoB based alloy powders which are different in composition from each other, wherein at least one of the FeCoB based alloy powders comprises Fe and Co in a total amount of 60 atom % or more such that Fe:Co atomic ratio is within a range of 70:30 to 40:60, and comprises Cr in an amount which is from 15 to 25 atom % greater than B. Then, the two or more kinds of the FeCoB based alloy powder are mixed and consolidated to form a target material.

The invention belongs to the technical field of titanium alloy surface coatings and provides a titanium alloy protecting coating. The titanium alloy protecting coating successively comprises a metallurgy-like mixed interface layer, a CrN layer, a CrCN layer and a Cr doped DLC layer from inside to outside. The metallurgy-like mixed interface layer is obtained by injecting nitrogen ions through an ion implantation depositing method. The metallurgy-like mixed interface layer prepared by means of the ion implantation depositing method is increased gradiently from core to surface in hardness. On this basis, the CrN layer, the CrCN layer and the Cr doped DLC layer are successively arranged and the hardness is increased gradually, so that hardness sudden change caused by directly depositing the coating to the titanium alloy surface is avoided. The coating can bear a relatively high pressure. The surface working layer doped with Cr can keep the friction coefficient be smaller than 0.1 during friction. The surface of the titanium alloy protecting coating bearing a pressure of 500 MPa provided by the invention is not damaged, and the friction coefficient is only 0.07 and the wear resistanceis improved by three times.

The invention discloses a novel photocatalyst for adsorbing and degrading azo dyes. The novel photocatalyst is Cr-doped ZnO containing a magnetic material and fixedly carried on optical fiber. A preparation method of the photocatalyst comprises the following steps of: (S1) preparing the Cr-doped ZnO containing the magnetic material: dissolving soluble zinc salt, chromium salt and ferric salt in alcohol to obtain solution A, adding alcohol solution of NaOH into the solution A, stirring, after heating for reaction, centrifugally separating, drying precipitates to obtain Cr-ZnO / gamma-Fe2O3; (S2)using the optical fiber to embed the Cr-ZnO / gamma-Fe2O3: (S21) removing an outer coating layer on the surface of the optical fiber, and exposing an optical-fiber core body; (S22) adopting a sol-gel method to embed Cr-ZnO / gamma-Fe2O3 on the surface of the optical-fiber core body to obtain the novel photocatalyst. The novel photocatalyst disclosed by the invention has the beneficial effects that thephotocatalyst is embedded on the surface of the optical fiber, so that the defect that the photocatalyst in the ordinary porous carrier hole can not be illuminated by light to cause waste of the photocatalyst is overcome, and the effective utilization rate of the photocatalyst is improved.