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64results about How to "Reduce cross sensitivity" patented technology

Capacitive micro-acceleration sensor with symmetrically combined elastic beam structure and production method thereof

The invention relates to a capacitive micro-acceleration sensor with a symmetrically combined elastic beam structure and a production method thereof. The acceleration sensor comprises a symmetric center mass block, an external support frame, eight symmetric straight beams, two symmetric frame beams, a combined elastic beam structure, an upper cover plate and a lower cover plate, wherein the eight symmetric straight beams are used for connecting the center mass block with the external support frame, and the combined elastic beam structure is formed by connecting eight symmetric L-shaped beams together; and the other end of each straight elastic beam connected with the frame beams is connected to the middle or a vertex angle at the top end and the bottom end of the lateral face of the center mass block, and the other end of each L-shaped beam connected with the frame beams is connected to the inner side face of the external support frame. The acceleration sensor adopts the combined elastic beam structure which is formed by connecting the symmetric straight beams, the frame beams and the L-shaped beams together, has high symmetry and can remarkably reduce the cross-sensitivity of the sensor; and the sensor is produced by adopting a microelectronic mechanical system technology and is the capacitive micro-acceleration sensor with high sensitivity.
Owner:SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI

MEMS piezoresistance type two-axis acceleration sensor chip and preparing method thereof

ActiveCN107907710AIncreased sensitivity and resonant frequencyImprove performanceAcceleration measurement using interia forcesPressure sensitiveSemi open
The invention discloses an MEMS piezoresistance type two-axis acceleration sensor chip and a preparing method thereof. The MEMS piezoresistance type two-axis acceleration sensor chip comprises four sets of same sub-structures. The four sub-structures are uniformly distributed at the periphery of a fixed island. The fixed island is connected with a mass block through an inner supporting beam. The mass block is connected with an outer frame through an outer supporting beam. Sensitive beams are symmetrically distributed at two sides of the outer supporting beam. One end of the sensitive beam is connected with one end of the mass block, and the other end of the sensitive beam is connected with the outer frame. The two sub-structures which face each other relative to the fixed island form a set, thereby forming a whole working structure for measuring one acceleration direction, thereby respectively measuring the accelerations in an X-axis and a Y-axis. The two sensitive beams of each sub-structure are respectively provided with a pressure-sensitive resistor and are connected with a pad through metal leads, thereby forming a semi-open-ring Wheatstone full-bridge circuit. The sensor chipcan realize separated measurement of the accelerations below 200g in two axes. The natural frequency of the MEMS piezoresistance type two-axis acceleration sensor reaches above 20kHz, and the sensitivity is higher than 0.5mB/g/3V. Furthermore the MEMS piezoresistance type two-axis acceleration sensor chip has relatively high resonant frequency and high sensitivity.
Owner:XI AN JIAOTONG UNIV

In-plane biaxial piezoresistive acceleration sensor chip and preparation method thereof

The invention discloses an in-plane biaxial piezoresistive acceleration sensor chip and a preparation method thereof. A chip is made of an SOI silicon wafer, and comprises a chip outer frame. A fixingisland is arranged in the middle of each side of the chip outer frame, a supporting beam is of an L-shaped structure, one end of a long section of the supporting beam is fixed to the chip outer framethrough the fixing islands, the other short section of the supporting beam is sequentially connected with an extending beam and a mass block, and a sensitive piezoresistive micro beam is arranged ina gap between the tail end of the extending beam and the fixing islands. All the eight mass blocks are connected through hinge beams to be square. A piezoresistor on the sensitive piezoresistive microbeam is connected with a bonding pad through a metal lead to form a Wheatstone full-bridge circuit. The extension beam is used as an intermediate structure for connecting the sensitive piezoresistivemicro-beam, the support beam and the mass blocks, and transmits the change of the motion state of the mass blocks to the sensitive piezoresistive micro-beam. According to the piezoresistive acceleration sensor chip, the supporting element and the sensitive element are separated, the dynamic performance and the application range of the piezoresistive acceleration sensor are improved, the preparation method is simple, and the reliability is high.
Owner:XI AN JIAOTONG UNIV

Pure axial deformation based MEMS three-axis piezoresistive accelerometer chip and preparation method thereof

The invention discloses a pure axial deformation based MEMS three-axis piezoresistive accelerometer chip and a preparation method thereof. An X measurement unit, a Y measurement unit and a Z measurement unit in a sensor are used for measuring the accelerations in the X direction, the Y direction and the Z direction respectively, so that the separate measurement of the accelerations in the three directions is realized; each measurement unit comprises mass blocks, a supporting beam and a sensitive beam; for no matter which of the measurement units, the supporting beam and the sensitive beam areseparately arranged through the mass blocks, the supporting beam supports the mass blocks to move, and the stress is mainly concentrated in the sensitive beam, so that the resistance value of a piezoresistor strip on the sensitive beam is changed; the supporting beam and the sensitive beam perform respective functions, so that the direct coupling relation between the sensitivity and the resonant frequency is greatly weakened; meanwhile, due to the synchronous movement of the two mass blocks, the two ends of the sensitive beam fixed with the mass blocks synchronously move, and the sensitive beam always meets the pure axial deformation condition; and under the same resonant frequency, the sensitivity of the sensor is optimal, so that the sensor chip has good performance indexes.
Owner:XI AN JIAOTONG UNIV

Resonant acceleration sensor based on nano piezoelectric beam and preparation method of resonant acceleration sensor

The invention belongs to the technical field of microelectronic machinery, and particularly relates to a resonant acceleration sensor based on a nano piezoelectric beam and a preparation method of theresonant acceleration sensor. The sensor comprises a substrate, a detection structure layer and a cover plate. The detection structure layer is made on the basis of a square double-polished silicon wafer. The sensor comprises a square outer frame and a square sensitive mass block located in the center of the outer frame. The two sides of the sensitive mass block in the x-axis direction are connected with the inner side walls of the corresponding outer frames through supporting beams respectively, the two sides of the sensitive mass block in the y-axis direction make contact with the inner side walls of the corresponding outer frames through double-end tuning fork resonators respectively, and each double-end tuning fork resonator comprises a pair of zinc oxide resonance beams. The top surface of the detection structure layer is connected with the bottom surface of the cover plate through a key groove, and the bottom surface of the detection structure layer is connected with the top surface of the substrate through a key groove, so that the substrate, the detection structure layer and the cover plate form an internally-closed acceleration sensor. The acceleration sensor is high in structural sensitivity, and indexes of high overload resistance, high resonant frequency and high sensitivity are realized.
Owner:HEFEI UNIV OF TECH
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