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Resonant acceleration sensor based on nano piezoelectric beam and preparation method of resonant acceleration sensor

A technology of acceleration sensor and piezoelectric beam, which is applied in the direction of measuring acceleration, speed/acceleration/shock measurement, instruments, etc., and can solve problems such as poor anti-overload ability, low resonance frequency, and low sensitivity

Active Publication Date: 2020-10-20
HEFEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to avoid the deficiencies in the above-mentioned prior art, the present invention provides a resonant acceleration sensor based on zinc oxide nano-piezoelectric beams and its preparation method, which realizes differential detection, Support beams at both ends to solve the technical problems of traditional resonant acceleration sensors with poor overload resistance, low resonance frequency and low sensitivity in the prior art

Method used

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  • Resonant acceleration sensor based on nano piezoelectric beam and preparation method of resonant acceleration sensor
  • Resonant acceleration sensor based on nano piezoelectric beam and preparation method of resonant acceleration sensor
  • Resonant acceleration sensor based on nano piezoelectric beam and preparation method of resonant acceleration sensor

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Embodiment 1

[0054] Such as Figure 1~4 As shown, the resonant acceleration sensor based on nano piezoelectric beams includes a substrate 1, a detection structure layer 2 and a cover plate 3;

[0055] The base 1 is made on the basis of a crystal orientation N-type single-polished silicon wafer. The top surface of the base 1 is a polished surface, and a movable cavity groove 11 is provided, and the center of the movable cavity groove 11 is provided with a lower limit position. slot 12;

[0056] The detection structure layer 2 is made on the basis of a square double-polished SOI silicon wafer, and includes a square outer frame 21 and a square sensitive mass 22 located in the center of the outer frame 21, and the top surface and the center of the bottom surface of the sensitive mass 22 are respectively provided with Upper limit post 231 and lower limit post 211;

[0057] Taking the center of the sensitive mass 22 as the origin, the two sides of the sensitive mass 22 in the x-axis direction...

Embodiment 2

[0062] The present invention also includes the preparation method of the above-mentioned resonant acceleration sensor based on the nano piezoelectric beam, including the following steps: preparing the chip: taking a double-throwing SOI silicon wafer with a thickness of 100 μm and two crystal orientation N with a thickness of 30 μm Type single throw silicon wafer;

[0063] One-time photolithography: use standard semiconductor cleaning process to clean the double-polished SOI silicon wafer, and spin-coat photoresist on the surface of the double-polished SOI silicon wafer, the photolithography reveals the outer frame 21 and the sensitive mass 22, and the sensitive mass 22 Grooves are respectively photoetched in the middle of each side; as in Figure 5 shown.

[0064] Secondary photolithography: heat the top surface of the double-polished SOI silicon wafer at high temperature to grow a layer of silicon dioxide on the top surface, attach a layer of positive photoresist on the sur...

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Abstract

The invention belongs to the technical field of microelectronic machinery, and particularly relates to a resonant acceleration sensor based on a nano piezoelectric beam and a preparation method of theresonant acceleration sensor. The sensor comprises a substrate, a detection structure layer and a cover plate. The detection structure layer is made on the basis of a square double-polished silicon wafer. The sensor comprises a square outer frame and a square sensitive mass block located in the center of the outer frame. The two sides of the sensitive mass block in the x-axis direction are connected with the inner side walls of the corresponding outer frames through supporting beams respectively, the two sides of the sensitive mass block in the y-axis direction make contact with the inner side walls of the corresponding outer frames through double-end tuning fork resonators respectively, and each double-end tuning fork resonator comprises a pair of zinc oxide resonance beams. The top surface of the detection structure layer is connected with the bottom surface of the cover plate through a key groove, and the bottom surface of the detection structure layer is connected with the top surface of the substrate through a key groove, so that the substrate, the detection structure layer and the cover plate form an internally-closed acceleration sensor. The acceleration sensor is high in structural sensitivity, and indexes of high overload resistance, high resonant frequency and high sensitivity are realized.

Description

technical field [0001] The invention belongs to the technical field of micro-electronic machinery, relates to a micro-inertial sensor, in particular to a resonant acceleration sensor based on nano piezoelectric beams and a preparation method thereof. Background technique [0002] The acceleration sensor is an inertial device in the inertial guidance system. It undertakes the tasks of providing inertial measurement reference for missile flight, measuring the acceleration and flight attitude angle of the missile in real time, and participating in the attitude control and guidance control of the missile. In the future, the missile guidance method is mainly inertial guidance. The advantages of inertial guidance are: no need for any external information, good concealment, strong anti-interference, long range of missiles, and high guidance accuracy. However, the missile is easily disturbed by various factors during the flight, which may easily cause deviation of the ballistic tra...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01P15/097
CPCG01P15/097
Inventor 许高斌王亚洲马渊明陈兴张文晋于永强陈士荣
Owner HEFEI UNIV OF TECH
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