Monolithic capacitor and mounting structure thereof

Abstract

A monolithic capacitor includes a main capacitor unit having first capacitor portions and a second capacitor portion arranged in a direction of lamination, with the first capacitor portion located towards at least one end in the direction of lamination, so that the first capacitor portion is located closer to a mounting surface than the second capacitor portion. The number of pairs of third and fourth lead-out portions for third and fourth internal electrodes in the second capacitor portion is less than the number of pairs of first and second lead-out portions for first and second internal electrodes in the first capacitor portion, so that the first capacitor portion contributes to decreasing ESL while the second capacitor portion contributes to increasing ESR.

Description

[0001] This application is a Divisional Application of U.S. patent application Ser. No. 11 / 616,550 filed Dec. 27, 2006, currently pending.BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to monolithic capacitors and mounting structures of the monolithic capacitors. More specifically, the present invention relates to a monolithic capacitor that is used in a high-frequency circuit and to a mounting structure of the monolithic capacitor. [0004] 2. Description of the Related Art [0005] As a decoupling capacitor that is used in a power supply circuit for an MPU (Micro Processing Unit) in a high frequency range on the order of several GHz, for example, a monolithic capacitor having a structure described in Japanese Unexamined Patent Application Publication No. 11-144996 (Patent Document 1) is known. In the monolithic capacitor, a plurality of terminals is provided such that adjacent terminals have opposite polarities. Thus, the length of pa...

AI Technical Summary

Benefits of technology

[0009] To overcome the problems described above, preferred embodiments of the present invention provide a monolithic capacitor in which ESL is decreased and ESR is increased at the same time, and a mounting structure of the monolithic capacitor which enables the low ESL characteristics of the monolithic capacitor in which ESL is decreased to be sufficiently exhibited.

[0025] In the monolithic capacitor according to the first preferred embodiment of the present invention, the main capacitor unit is divided into the first and second capacitor portions, and the number of pairs of the third and fourth lead-out portions for one pair of the third and fourth internal electrodes in the first capacitor portion is less than the number of pairs of the first and second lead-out portions for one pair of the first and second internal electrodes in the second capacitor portion. Thus, ESL is further decreased in the first capacitor portion, so that it is possible to make the resonant frequency of the first capacitor portion greater than the resonant frequency of the second capacitor portion. Accordingly, the first capacitor portion affects frequency characteristics in a higher frequency range in the combined characteristics of the main capacitor unit. Therefore, the ESL characteristics of the first capacitor portion are reflected, so that the ESL of the main capacitor unit is decreased.

[0028] In the monolithic capacitor according to the first preferred embodiment of the present invention, in order to make the number of pairs of the third and fourth lead-out portions less than the number of pairs of the first and second lead-out portions as described above, by making the number of third lead-out portions for the third internal electrode and the number of fourth lead-out portions for the fourth internal electrode less than the number of first lead-out portions for the first internal electrode and the number of fourth lead-out portions for the second internal electrodes, the decrease in ESL due to the first capacitor portion and the increase in ESR due to the second capacitor portion are reliably achieved.

[0032] In the monolithic capacitor according to preferred embodiments of the present invention, when the first and second external terminal electrodes are arranged alternately, paths of currents from positive terminals to negative terminals are shortened, and magnetic fluxes are canceled more effectively. Thus, the ESL in the first capacitor portion is further decreased.

Problems solved by technology

Therefore, the problem of steep impedance characteristics arises.

This causes the problem of degradation of high-frequency characteristics.

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