Chromium doped titanium dioxide ferromagnetic film room temperature preparation method

Abstract

The invention provides a method for preparing a chromium-doped titanium dioxide (TiO2)(CrxTi<1-X>O2) room-temperature ferromagnetic film, which belongs to the field of the preparation of the novel semiconductor spin electric devices. In the method, a Cr-doped titanium dioxide sol is first prepared adopting the sol-gel method and the sol is rotationally coated on a silicon substrate to form a CrxTi<1-X>O2 sol-gel film. The CrxTi<1-X>O2 sol-gel film has weak ferromagnetic characteristic at the room temperature after being annealed and crystallized in the air atmosphere; the CrxTi<1-X>O2 film has increased ferromagnetic characteristic after being secondarily annealed in the atmosphere in which the hydrogen is contained or under a vacuum environment. The adoption of the invention can prepare the CrxTi<1-X>O2 film having favorable room-temperature ferromagnetism.

Description

technical field

[0001] The invention belongs to the field of preparation of novel semiconductor spintronic devices, in particular to a Cr-doped TiO with room temperature ferromagnetism 2 (Cr x Ti 1-x o 2 ) film preparation method. Background technique

[0002] Dilute magnetic semiconductors combine the charge transport properties of semiconductors and the information storage properties of magnetic materials, and are important materials for the preparation of new semiconductor spintronic devices. Due to the introduction of magnetic elements, dilute magnetic semiconductor materials also have a series of singular properties different from ordinary semiconductors, which contain rich physical connotations. Therefore, the study of dilute magnetic semiconductors is of great significance both in basic theory and in practical applications. Oxide-based dilute magnetic semiconductor is a promising dilute magnetic semiconductor material with high temperature ferromagnetism and high...

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