Chromium doped titanium dioxide ferromagnetic film room temperature preparation method

A ferromagnetic thin film, room temperature technology, applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc. The effect of increasing the moment

Inactive Publication Date: 2008-07-02
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Doped TiO obtained by different preparation methods 2 The ionic magnetic moments of materials vary w

Method used

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  • Chromium doped titanium dioxide ferromagnetic film room temperature preparation method
  • Chromium doped titanium dioxide ferromagnetic film room temperature preparation method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Embodiment 1 Sol-gel method prepares Cr x Ti 1-x o 2 (x=0.05) film

[0020] Preparation of Cr on Si(001) Single Crystal Substrate by Sol-Gel Method 0.05 Ti 0.95 o 2 film. Utilize tetra-n-butyl titanate and chromium chloride as precursors (Cr:Ti molar ratio is 5:95), dissolve them in absolute ethanol (concentration of solution is 0.1mol / L), add acetylacetone as complex Mixture, nitric acid as a catalyst, drop an appropriate amount of deionized water, use a magnetic stirrer to stir the solution at room temperature for 3 hours to fully mix the solution, and place it in the air for two days to obtain stable Cr-doped TiO2 Sol. Cr-doped TiO 2 The sol was evenly coated on the Si(001) single crystal substrate. The spin coating process of the sol was first carried out at 500rpm for 10 seconds, and then at 3000rpm for 40 seconds to obtain a uniform thickness of Cr 0.05 Ti 0.95 o 2 Sol-gel films. After the film is dried at 100°C for 10 minutes, the next film spin coatin...

Embodiment 2

[0022] Embodiment 2 sol-gel method prepares Cr x Ti 1-x o 2 (x=0.03) film

[0023] Preparation of Cr on Si(001) Single Crystal Substrate by Sol-Gel Method 0.03 Ti 0.97 o 2 film. Using tetra-n-butyl titanate and chromium acetate as precursors (Cr:Ti molar ratio is 3:97), they are co-dissolved in ethylene glycol (concentration of solution is 0.1mol / L), and glacial acetic acid is added as complex Mixture, nitric acid as a catalyst, drop an appropriate amount of deionized water, use a magnetic stirrer to stir the solution at room temperature for 3 hours to fully mix the solution, and heat and age at 60°C for 12 hours to obtain stable Cr-doped TiO 2 Sol. Cr-doped TiO 2 The sol was coated on the Si(001) substrate by first spin-coating at 500 rpm for 10 s, then at 3000 rpm for 40 s to obtain a uniform thickness of Cr 0.03 Ti 0.97 o 2 Sol-gel films. After the film is dried at 80°C for 15 minutes, the next film spin coating is performed, and then the spin coating is repeate...

Embodiment 3

[0025] Embodiment 3 sol-gel method prepares Cr x Ti 1-x o 2 (x=0.1) film

[0026] Preparation of Cr on Si(001) Single Crystal Substrate by Sol-Gel Method 0.1 Ti 0.9 o 2 film. Utilize tetra-n-butyl titanate and chromium chloride as precursors (Cr:Ti molar ratio is 10:90), dissolve them in ethylene glycol (concentration of solution is 0.1mol / L), add acetylacetone as complex Mixture, hydrochloric acid as a catalyst, drop an appropriate amount of deionized water, use a magnetic stirrer to stir the solution at room temperature for 3 hours to fully mix the solution, heat and age at 60°C for 12 hours, and obtain stable Cr-doped TiO 2 Sol. Cr-doped TiO 2 The sol was coated on the Si(001) substrate by first spin-coating at 500 rpm for 10 s, then at 3000 rpm for 40 s to obtain a uniform thickness of Cr 0.1 Ti 0.9 o 2 Sol-gel films. After the film is dried at 120°C for 10 minutes, the next film spin coating is performed, and then the spin coating is repeated to obtain a film ...

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Abstract

The invention provides a method for preparing a chromium-doped titanium dioxide (TiO2)(CrxTi<1-X>O2) room-temperature ferromagnetic film, which belongs to the field of the preparation of the novel semiconductor spin electric devices. In the method, a Cr-doped titanium dioxide sol is first prepared adopting the sol-gel method and the sol is rotationally coated on a silicon substrate to form a CrxTi<1-X>O2 sol-gel film. The CrxTi<1-X>O2 sol-gel film has weak ferromagnetic characteristic at the room temperature after being annealed and crystallized in the air atmosphere; the CrxTi<1-X>O2 film has increased ferromagnetic characteristic after being secondarily annealed in the atmosphere in which the hydrogen is contained or under a vacuum environment. The adoption of the invention can prepare the CrxTi<1-X>O2 film having favorable room-temperature ferromagnetism.

Description

technical field [0001] The invention belongs to the field of preparation of novel semiconductor spintronic devices, in particular to a Cr-doped TiO with room temperature ferromagnetism 2 (Cr x Ti 1-x o 2 ) film preparation method. Background technique [0002] Dilute magnetic semiconductors combine the charge transport properties of semiconductors and the information storage properties of magnetic materials, and are important materials for the preparation of new semiconductor spintronic devices. Due to the introduction of magnetic elements, dilute magnetic semiconductor materials also have a series of singular properties different from ordinary semiconductors, which contain rich physical connotations. Therefore, the study of dilute magnetic semiconductors is of great significance both in basic theory and in practical applications. Oxide-based dilute magnetic semiconductor is a promising dilute magnetic semiconductor material with high temperature ferromagnetism and high...

Claims

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Application Information

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IPC IPC(8): H01L21/203
Inventor 刘力锋康晋锋王漪张兴韩汝琦
Owner PEKING UNIV
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