Method for preferred orientation growth of rutile titanium dioxide nanowire arrays on crystal face (001)

A nanowire array, titanium dioxide technology, applied in nanotechnology, liquid chemical plating, metal material coating technology and other directions, can solve problems such as the inability to guarantee preferential orientation growth, and achieve good ultraviolet stimulated light characteristics, low cost, good The effect of preferential growth

Active Publication Date: 2019-04-09
工业和信息化部电子第五研究所华东分所
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This invention realizes the growth of a one-dimensional titanium dioxide nanowire arra

Method used

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  • Method for preferred orientation growth of rutile titanium dioxide nanowire arrays on crystal face (001)
  • Method for preferred orientation growth of rutile titanium dioxide nanowire arrays on crystal face (001)
  • Method for preferred orientation growth of rutile titanium dioxide nanowire arrays on crystal face (001)

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Embodiment 1

[0056] 1) With tetrabutyl titanate (Ti(OBu) 4 ) is the solute, the mixed solution of acetylacetone, ethylene glycol methyl ether and acetone is the solvent, the volume ratio of acetylacetone, ethylene glycol methyl ether and acetone is 1:1:0.5, and the concentration of preparing tetrabutyl titanate is 0.1 mol / L precursor solution;

[0057] 2) Dissolving 1% molar chromium chloride relative to the titanium ion concentration in the mixed solution of step 1) as Cr ion doping;

[0058] 3) Seal the solution doped with Cr ions, put it into a constant temperature water bath, and stir it magnetically at a constant temperature of 60°C to obtain a transparent and uniform sol;

[0059] 4) Deposit the sol obtained above on the cleaned FTO glass sheet by using the spin coating process at a speed of 2000r / min, and then put the spin-coated substrate into a drying oven at 200°C to bake the solvent. Fully volatilize, and finally put the substrate into an annealing furnace, and anneal at 450°C...

Embodiment 2

[0063] 1) With tetrabutyl titanate (Ti(OBu) 4 ) is the solute, the mixed solution of acetylacetone, ethylene glycol methyl ether and acetone is the solvent, the volume ratio of acetylacetone, ethylene glycol methyl ether and acetone is 1:1:0.5, and the concentration of preparing tetrabutyl titanate is 0.2 mol / L precursor solution;

[0064] 2) Dissolving 1% molar chromium chloride relative to the titanium ion concentration in the mixed solution of step 1) as Cr ion doping;

[0065] 3) Seal the solution doped with Cr ions, put it into a constant temperature water bath, and stir it magnetically at a constant temperature of 60°C to obtain a transparent and uniform sol;

[0066] 4) Deposit the sol obtained above on the cleaned FTO glass sheet by using the spin coating process at a speed of 2000r / min, and then put the spin-coated substrate into a drying oven at 250°C to bake the solvent. Fully volatilize, and finally put the substrate into an annealing furnace, and anneal at 450°C...

Embodiment 3

[0070] 1) With tetrabutyl titanate (Ti(OBu) 4 ) is the solute, the mixed solution of acetylacetone, ethylene glycol methyl ether and acetone is the solvent, the volume ratio of acetylacetone, ethylene glycol methyl ether and acetone is 1:1:0.5, and the concentration of preparing tetrabutyl titanate is 0.3 mol / L precursor solution;

[0071] 2) Dissolving 1% molar chromium chloride relative to the titanium ion concentration in the mixed solution of step 1) as Cr ion doping;

[0072] 3) Seal the solution doped with Cr ions, put it into a constant temperature water bath, and stir it magnetically at a constant temperature of 60°C to obtain a transparent and uniform sol;

[0073] 4) Deposit the sol obtained above on a cleaned FTO glass sheet by using the spin coating process at a speed of 2500r / min, and then put the spin-coated substrate into a drying oven at 250°C to bake the solvent. Fully volatilize, and finally put the substrate into an annealing furnace, and anneal at 450°C f...

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Abstract

The invention provides a method for preferred orientation growth of rutile titanium dioxide nanowire arrays on a crystal face (001). The method comprises the following steps of 1) preparing a Cr-dopedtitanium dioxide film as a seed layer; 2) placing the Cr-doped titanium dioxide film seed layer prepared in the step 1) in growth liquid, carrying out hydrothermal growing, and obtaining the preferred orientation growth rutile titanium dioxide nanowire arrays. The method is low in cost, simple in process requirement, good in repeatability and capable of achieving large-scale manufacturing, and the prepared titanium dioxide nanowire arrays have good preferential orientation growth and ultraviolet excited light emitting characteristics in the (001) direction.

Description

technical field [0001] The present invention relates to the technical field of nanostructure arrays, and relates to a method for self-assembled growth of nanostructure arrays, in particular to a method for rutile-phase titanium dioxide nanowire arrays grown in the preferred orientation of (001) crystal planes, and in particular to a method for growing on Cr A method for growing rutile-phase titania nanowire arrays on a doped titania film with preferred orientation. Background technique [0002] Titanium dioxide is a typical wide bandgap direct bandgap n-type semiconductor with a bandgap above 3.0eV. At the same time, it is also a non-toxic, pollution-free and environmentally friendly material with abundant raw materials and low cost. It is used in medicine, chemistry, The fields of physics and nanomaterials have received extensive attention and research. In recent years, with the development of solar cells and flat-panel display industries, titanium oxide thin films have at...

Claims

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Application Information

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IPC IPC(8): C23C18/12B82Y40/00
CPCB82Y40/00C23C18/1216C23C18/1225C23C18/1254
Inventor 汪洋杨永兴楼倩杨文静
Owner 工业和信息化部电子第五研究所华东分所
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