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314results about How to "Simple process requirements" patented technology

Technical method for constructing reference surface of assembled folio cartridge receiver and special clamp

The invention provides a technical method for constructing a reference surface of an assembled folio cartridge receiver and a special clamp. The special clamp comprises a base, pressing plates, adjustable supports, support screws and two sets of positioning components, wherein each positioning component comprises a front-end positioning block, a front-end hook-shaped pressing plate, a connection block, a rear-end positioning block and a rear-end hook-shaped pressing plate; and the two sets of positioning components are in centrosymmetry about a central axis of the base. The technical process comprises the following steps of: performing rough turning machining on an annular blank of the folio cartridge receiver, retaining flange edges, splitting the annular piece of the cartridge receiver,cutting off the flange edges on different sides, fixing two half cartridge receivers on the special clamp, and constructing the reference surface of the assembled folio cartridge receiver by adjusting the clamp. Compared with the conventional method, the technical method has the advantages that: the technical requirement of the whole machining flow is easy to realize; the whole machining flow canbe finished on the vertical lathe; the machining efficiency is high; and the reference surface of the folio cartridge receiver is machined during one-time clamping.
Owner:AECC AVIATION POWER CO LTD

Production method of high magnetic induction oriented silicon steel

The invention relates to a production method of high magnetic induction oriented silicon steel, comprising the steps of smelting, continuous casting, hot rolling, normalization, decarbonization and annealing, MgO coating, high-temperature annealing and insulation coating, wherein the normalization comprises the steps that: normalization is carried out on a hot rolling plate, nitridation is finished synchronously, the temperature of normalization and nitridation is 1050-1150 DEG C, the atmosphere is 5-35% NH3 (volume percentage), and the balance of gas is N2; after the normalization and nitridation, the N content nitrided into the hot rolling plate is 60-250ppm; and normalization cooling is carried out, the initial temperature of fast cooling is 700-950 DEG C, and the fast cooling speed with the temperature of being reduced to 550 DEG C is 15-40 DEG C/sec. The production method solves the problem of difficult nitridation in the decarbonization procedure when a low-temperature plate blank heating technology is used for producing the high magnetic induction oriented silicon steel, carries out synchronous nitridation on the hot rolling plate in the normalization procedure, and leads the following procedure of decarbonization and annealing techniques to be simplified and easily controlled, thus not only being capable of obtaining a high magnetic induction oriented silicon steel product with excellent performance and simultaneously leading the production cost to be reduced.
Owner:BAOSHAN IRON & STEEL CO LTD

Low-melting-point alloy with melting point being 40-60 DEG C and preparation method of low-melting-point alloy

The invention relates to the field of heat conduction materials and provides low-melting-point alloy. The low-melting-point alloy comprises, by mass, 47.0-50.8% of indium, 29.5-32.3% of bismuth, 13.5-16.3% of tin and 0.67-10% of gallium. A preparation method of the low-melting-point alloy comprises the steps that A, all the constituents are weighed according to requirements; B, the furnace temperature is increased to 350 DEG C, the bismuth and the tin are placed into a ceramic crucible, the ceramic crucible is placed into a smelting furnace to be heated, after the bismuth and the tin are melted, surface oxide is removed, and stirring is conducted; C, the furnace temperature is adjusted to 200 DEG C, the indium is added, and after the indium is completely melted, surface slagging-off and stirring are conducted; D, the furnace temperature is adjusted to 100 DEG C, the gallium is added, and slagging-off and standing are conducted after stirring; and E, the crucible is taken out, the alloy is poured into a mold, and cooling is conducted. The melting point of the low-melting-point alloy is 40-60 DEG C, the low-melting-point alloy is used for low-junction-temperature occasions in a phase-change mode, and the application space of liquid metal thermal interface materials is enlarged; harmful elements such as lead and cadmium are not contained in the low-melting-point alloy product, and environment protection is facilitated. The preparation method is simple in technological requirement, and the whole process can be conducted in the atmospheric environment.
Owner:SUZHOU TIANMAI THERMAL TECH

High-resistance cap layer-based III-nitride polarization super-junction high electron mobility transistor (HEMT) device and fabrication method thereof

The invention discloses a high-resistance cap layer-based III-nitride polarization super-junction high electron mobility transistor (HEMT) device and a fabrication method thereof. The device comprises a first heterojunction, a second heterojunction, a p-type doping fourth semiconductor, a source, a drain and a gate, wherein the first heterojunction comprises a first semiconductor and a second semiconductor, the second semiconductor is formed on the first semiconductor and is provided with a band gap wider than the first semiconductor, a two-dimensional electron gas is formed in a first heterojunction structure, the second heterojunction comprises the second semiconductor and a third semiconductor, the third semiconductor is formed on the second semiconductor and is provided with a band gap narrower than the second semiconductor, a two-dimensional electron gas is formed in a second heterojunction structure, the fourth semiconductor is formed on the second semiconductor, the fourth semiconductor and the third semiconductor are closely connected in a horizontal direction, the source and the drain are connected with the first heterojunction and can be electrically connected through the two-dimensional electron gases, and the gate is arranged between the source and the drain and is connected with the fourth semiconductor.
Owner:SUZHOU NENGWU ELECTRONICS TECH

Two-component casting glue for capsulation of solar photovoltaic module and preparation method thereof

The invention provides a two-component casting glue for capsulation of a solar photovoltaic module, which belongs to the field of high polymer sealing materials. The two-component casting glue comprises component A and component B; component A comprises the following raw materials of 100 to 120 parts by weight of alpha-omega-dihydroxy polydimethylsiloxane, 30 to 50 parts by weight of silicone oil, 80 to 100 parts by weight of a heat conducting filling material, 50 to 60 parts by weight of a flame retardant filling material and 30 to 50 parts by weight of nanometer calcium carbonate; and component B comprises the following raw materials of 100 to 120 parts by weight of silicone oil, 20 to 40 parts by weight of a cross-linking agent, 2 to 3 parts by weight of a coupling agent, 0.5 to 1 part by weight of a catalyst and 1 to 1.5 parts by weight of colored slurry. The two-component casting glue has the advantages of effectively promoted flame resistance, a substantially improved heat conducting effect, capacity of timely and effectively conducting out heat emitted by a bypass diode, excellent performance in inhibiting permeability of water vapor, excellent electrical properties and ideal weatherability and corrosion resistance. A recommended preparation method for the two-component casting glue is simple and terse and does not have strict requirements on a process and equipment.
Owner:江苏明昊新材料科技股份有限公司

Novel ceramic nanofiltration membrane preparation method

The invention relates to a novel ceramic nanofiltration membrane preparation method. The method includes: dissolving a precursor into an organic solvent to obtain a precursor solution; drying to-be-treated ceramic ultrafiltration membranes; impregnating the dried ceramic ultrafiltration membranes into the precursor solution until complete impregnation is realized, taking out, airing, drying and calcining to obtain ceramic nanofiltration membranes. By addition of active components to pore passages of the ceramic ultrafiltration membranes and in-situ hydrolysis reaction of the active components, ceramic nanoparticles are obtained in the pore passages of the membranes after thermal treatment, and accordingly regulation of membrane pore diameters can be realized; by control of precursor types, precursor concentration, solvents, thermal treatment process and the like, continuous regulation of the pore diameters of the ceramic ultrafiltration membranes can be realized. Due to freeness of new membrane layers formed on the surfaces of the ceramic ultrafiltration membranes, the problem of proneness to cracking of the membrane layers in preparation of the ceramic nanofiltration membranes is avoided, and a series of ceramic nanofiltration membranes different in material and microstructure can be obtained. The novel ceramic nanofiltration membrane preparation method is a novel method for preparing the ceramic nanofiltration membranes.
Owner:NANJING UNIV OF TECH

Method for realizing enhanced HEMT (High Electron Mobility Transistor) by virtue of p-type passivation and enhanced HEMT

The invention discloses a method for realizing an enhanced HEMT (High Electron Mobility Transistor) by virtue of p-type passivation. The method comprises the following steps: providing a heterostructure which mainly comprises a first semiconductor and a second semiconductor, wherein the second semiconductor is distributed on the first semiconductor and is provided with a band gap wider than the first semiconductor, and two-dimensional electron gas is formed in the heterostructure; forming a p-type doped third semiconductor on the second semiconductor, performing passivation treatment on a residual region, except for an under-gate region, of the third semiconductor, so that the p-type doped region only exists at the under-gate region, and the under-gate region is distributed under a gate electrode of an HEMT device; manufacturing a source electrode, a drain electrode and a gate electrode connected with the heterostructure, electrically connecting the source electrode and the drain electrode through the two-dimensional electron gas, and enabling the gate electrode to be distributed between the source electrode and the drain electrode. The invention further discloses the enhanced HEMT. The method has the advantages of simple process, high repeatability, stable and favorable device performance, low cost, easiness for large-scale production and the like.
Owner:SUZHOU NENGWU ELECTRONICS TECH

High-power intracavity frequency-doubled semiconductor disk laser

The invention relates to a high-power intracavity frequency-doubled semiconductor disk laser, which belongs to the technical field of semiconductor lasers. According to the invention, the heating effect of the laser is improved by using a heat-dissipating window, the frequency of fundamental-frequency lasers is stabilized and the line width of fundamental-frequency lasers is narrowed by using a filtering device, thereby improving the intracavity frequency-doubled efficiency. A pumping light subjected to collimating and focusing acts on a semiconductor disk gain medium (4), and a high-heat-conductivity heat-dissipating window (5) which is transparent to the pumping light and laser is bonded on the semiconductor disk gain medium; a photon-generated carrier in the gain medium has stimulated radiation in a quantum well (14), a laser cavity consisting of a rear-end mirror (8), an output coupling mirror (7), and a Bragg mirror (16) at the bottom of the semiconductor disk gain medium generates fundamental-frequency lasers, and a nonlinear crystal (10) generates frequency-doubled lasers (11); and the semiconductor disk laser is characterized in that: a filtering device (9) is arranged in the laser cavity, so that the frequency of fundamental-frequency lasers is stabilized effectively, and the line width of the fundamental-frequency lasers is narrowed many times, thereby improving the frequency-doubled efficiency.
Owner:BEIJING UNIV OF TECH
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