70results about How to "Lower interface state" patented technology

The invention relates to the technical field of production of wide bandgap semiconductor materials and devices and discloses a method for improving the performance of a GaN-based field-effect transistor, the method comprises: mixed pre-treatment solution is adopted to carry out the surface pre-treatment of the surface of a device before the passivation of the GaN-based field-effect transistor during the production process of the GaN-based field-effect transistor, then a compound dielectric layer of silicon nitride and oxygen-rich silicon nitride is deposited on the surface of the device afterthe surface pre-treatment, and the GaN-based field-effect transistor is passivated. The use of the method can solve a surface original oxide layer which is existed on the surface of AlGaN for a long time, eliminate the AlGaN surface state which is induced by the surface oxide layer, solve the surface state existing in an AlGaN and silicon nitride interface, the current collapse effect which is induced by the surface original oxide layer and the significant increase of the reverse gate leakage current caused by the conventional passivation and improve the stability and the reliability of GaN-based HEMT.

The invention provides a GaN-based enhanced field effect device and a manufacturing method thereof. The GaN-based enhanced field effect device comprises an active region and an isolation region surrounded by the active region, wherein the active region comprises a single crystal substrate, a buffer layer, a channel layer, a barrier layer, an interface control layer, a source metal electrode, a drain metal electrode, a grid metal electrode and a dielectric passivation layer and further comprises a P-type two-dimensional material grid; the P-type two-dimensional material grid is inserted below the grid metal electrode, so the two-dimensional electron gas in the channel below the grid can be effectively depleted, and the GaN-based enhanced field effect device is realized. The P-type two-dimensional material is advantaged in that cavity concentration is high, crystal lattice matching and a low interface state are realized, selective removal from the surface of a gallium nitride material can be realized, and process controllability is good, so threshold consistency of the acquired GaN-based enhanced field effect device is good, and a reliability problem caused by current collapse is well suppressed.

The invention discloses a high-speed deposition method on a P / I interface of a microcrystal silicon solar battery, which comprises controlling glowing power and silicane concentration by ultra-high frequency plasma enhanced chemical vapor deposition method and depositing a first intrinsic microcrystal silicon film layer on a P player with a first deposition rate; adjusting glowing power and silicane concentration without extinguishment of plasma glow and growing a second intrinsic microcrystal silicon film layer on the first intrinsic microcrystal silicon film layer with a second deposition rate, wherein the first deposition rate is smaller than the second deposition rate. The invention uses lower glower power and lower silicane concentration to depose on P layer with smaller deposition rate to obtain high crystallized intrinsic microcrystal silicon film layer with low defect, so as to improve battery efficiency.

The invention discloses a method for realizing an enhanced HEMT (High Electron Mobility Transistor) through p-type passivation, which comprises the following steps of: providing a heterostructure mainly consisting of a first semiconductor and a second semiconductor, distributing the second semiconductor on the first semiconductor and having a band gap wider than that of the first semiconductor, and forming two-dimensional electron gas in the heterostructure; forming a p-type doped third semiconductor on the second semiconductor; carrying out passivation treatment on other regions except the under-gate region in the third semiconductor, so that the p-type doped region only exists in the under-gate region, and the under-gate region is distributed right below the gate of the HEMT device; and manufacturing a source electrode, a drain electrode and a grid electrode which are connected with the heterostructure, enabling the source electrode and the drain electrode to be electrically connected through the two-dimensional electron gas, and enabling the grid electrode to be distributed between the source electrode and the drain electrode. The invention also discloses an enhanced HEMT (high electron mobility transistor). The method has the advantages of simple process, high repeatability, stable and excellent device performance, low cost, easiness in large-scale production and the like.