Two-dimensional semiconductor material negative capacitance field effect transistor and preparation method thereof
A two-dimensional semiconductor and capacitive field technology, applied in the field of nanoelectronics, can solve the problems of serious interface state and deteriorating subthreshold slope of the device, and achieve the effects of small contact resistance, improved Fermi pinning of metal contacts, and simple preparation process
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[0043] In the following, the present invention will be further described through embodiments with reference to the accompanying drawings.
[0044] Such as figure 1 As shown, the negative capacitance field effect transistor based on the two-dimensional semiconductor material of the present invention includes an insulating substrate 1 and a two-dimensional alloy semiconductor material HfZrSe 2 Layer 2, a HfZrO with ferroelectric properties 2 The dielectric layer 3, a metal source electrode 4, a metal drain electrode 4', a high-k gate dielectric layer 5, and a control gate electrode 6. Among them, HfZrO with ferroelectric properties 2 The dielectric layer 3 is located in the two-dimensional alloy semiconductor material HfZrSe 2 Above layer 2, the metal source and drain electrodes 4 and 4'are located in HfZrO with ferroelectric properties 2 Above the dielectric layer 3, the high-k gate dielectric layer 5 is located between the metal source and drain electrodes. Two-dimensional alloy s...
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