Method for realizing enhanced HEMT through p-type passivation
An enhanced and p-type technology, applied in the field of microelectronics technology, can solve the problems of small saturation current, reduced device performance, poor repeatability, etc.
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Embodiment 1
[0073] Example 1: Please refer to Figure 4 A method for fabricating an enhanced HEMT by implanting H ions into a p-type doped layer according to this embodiment includes the following steps:
[0074] (1) Treat the substrate surface in the reaction chamber of the epitaxial growth equipment;
[0075] (2) Epitaxial growth of AlGaN / GaN epitaxial layer and p-GaN on the substrate, wherein the thickness of GaN is 1μm-3μm, the thickness of AlGaN is 14nm-30nm, and the molar content of Al element is 20%-30%, p -GaN thickness is 5-100nm, Mg doping concentration is 10 16 After being taken out from the chamber, it is cleaned with an organic solution and purged with high-purity nitrogen;
[0076] (3) Photolithographic development is carried out on the cleaned sample, the photoresist is AZ5214, the exposure time is 6.5s, the development time is 50s-60s, and the table is isolated, and ion implantation or plasma etching can be used;
[0077] (4) By photolithography, etch the source and dra...
Embodiment 2
[0081] see again Figure 4 A method of manufacturing an enhanced HEMT realized by implanting H ions into a P-type doped layer comprises the following steps:
[0082] (1) processing the substrate surface in the reaction chamber;
[0083] (2) Epitaxial growth of AlGaN / GaN epitaxial layer and p-GaN on the substrate, wherein the thickness of GaN is 1μm-3μm, the thickness of AlGaN is 14nm-30nm, and the molar content of Al element is 20%-30%, p -GaN thickness is 5-100nm, Mg doping concentration is 10 16 After being taken out from the chamber, it is cleaned with an organic solution and purged with high-purity nitrogen;
[0084] (3) Photolithographic development is carried out to the cleaned sample. The photoresist is AZ5214, the exposure time is 6.5s, and the development time is 50s-60s. Use the photoresist as a mask and use an ion implanter to implant H ions. H can effectively combine with Mg in the implanted region of the p-type doped layer, making it lose the p-type characteris...
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