Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Silicon-germanium heterojunction solar cell and preparation method thereof

A silicon-germanium heterojunction and solar cell technology, which is applied in the field of solar cells, can solve problems such as defects, carrier recombination, and expensive equipment, and achieve the effects of reducing interface states, increasing short-circuit current, and fully utilizing

Active Publication Date: 2015-11-11
江苏润阳悦达光伏科技有限公司
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Moreover, HIT solar cells currently have some problems: 1. The equipment is expensive, and the raw materials are highly dangerous chemicals
3. There are a large number of defects in the amorphous silicon thin film, which will cause serious carrier recombination
The lattice mismatch between silicon and germanium is as high as 4.1%, but direct deposition of germanium on the surface of Si will cause serious defects at the interface

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silicon-germanium heterojunction solar cell and preparation method thereof
  • Silicon-germanium heterojunction solar cell and preparation method thereof
  • Silicon-germanium heterojunction solar cell and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] The silicon-germanium heterojunction solar cell provided in this embodiment, the structure of the silicon-germanium heterojunction solar cell includes from top to bottom: a silver electrode, an aluminum-doped zinc oxide AZO conductive layer, an n-type single crystal silicon wafer, an i-type SiGe alloy buffer layer thin film, p-type Ge thin film and gold electrode, the silicon germanium heterojunction solar cell has a wide spectral response value of 300-1800nm.

[0049] Wherein the aluminum-doped zinc oxide AZO conductive layer has a thickness of 100nm, the i-type SiGe alloy buffer layer film has a thickness of 150nm, and the p-type Ge film has a thickness of 200nm.

[0050] The silicon-germanium heterojunction solar cell is prepared by a method comprising the following steps:

[0051] (1) Select an n-type single crystal silicon wafer polished on one side, and deposit Si on the polished surface by PECVD 3 N 4 Mask, the parameters of PECVD are: NH 3 and SiH 4 The flow...

Embodiment 2

[0070] The silicon-germanium heterojunction solar cell provided in this embodiment comprises, from top to bottom: a silver electrode, an AZO conductive layer, an n-type single crystal silicon wafer, an i-type SiGe alloy buffer layer film, a p-type Ge film and a gold electrode, The silicon germanium heterojunction solar cell has a wide spectral response value of 300-1800nm.

[0071] Wherein the thickness of the AZO conductive layer is 150nm, the thickness of the i-type SiGe alloy buffer layer film is 300nm, and the thickness of the p-type Ge film is 400nm.

[0072] Such as Figure 1-9 As shown, the silicon germanium heterojunction solar cell is prepared by a method comprising the following steps:

[0073] (1) Select n-type monocrystalline silicon wafers polished on one side, and prepare Si by PECVD 3 N 4 Mask, NH 3 and SiH 4 The flow ratio is 1:3.5, the substrate temperature is 285°C, the reaction pressure is 90Pa, the thickness is 70nm, and the deposition time is 90s;

...

Embodiment 3

[0083] The silicon-germanium heterojunction solar cell provided in this embodiment comprises, from top to bottom: a silver electrode, an AZO conductive layer, an n-type single crystal silicon wafer, an i-type SiGe alloy buffer layer film, a p-type Ge film and a gold electrode, The silicon germanium heterojunction solar cell has a wide spectral response value of 300-1800nm.

[0084] Wherein the thickness of the AZO conductive layer is 50nm, the thickness of the i-type SiGe alloy buffer layer film is 100nm, and the thickness of the p-type Ge film is 100nm.

[0085] Such as Figure 1-9 As shown, the silicon germanium heterojunction solar cell is prepared by a method comprising the following steps:

[0086] (1) Select n-type monocrystalline silicon wafers polished on one side, and prepare Si by PECVD 3 N 4 Mask, NH 3 and SiH 4 The flow ratio is 1:4.5, the substrate temperature is 315°C, the reaction pressure is 130Pa, the thickness is 80nm, and the deposition time is 105s;

...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a silicon-germanium heterojunction solar cell. The structure of the silicon-germanium heterojunction solar cell sequentially comprises a silver electrode, an aluminum-doped zinc oxide (AZO) conductive layer, n-type monocrystalline silicon, an i-type SiGe alloy buffer layer film, a p-type Ge film and a gold electrode from top to bottom. The silicon-germanium heterojunction solar cell has a broad spectrum response value of 300-1800nm. According to the cell disclosed by the invention, a SiGe alloy buffer layer is deposited between silicon and germanium, thereby being capable of effectively reducing the interface state, reducing interface recombination, and increasing open-circuit voltage of the cell. In addition, a band gap of the buffer layer changes gradually, so that sunlight can be absorbed better, and short-circuit current of the cell is increased. The invention further discloses a preparation method of the silicon-germanium heterojunction solar cell. The preparation method is safe in raw material, capable of directly applying existing equipment and relatively low in cost.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a silicon-germanium heterojunction solar cell and a preparation method thereof. Background technique [0002] Solar energy is an inexhaustible renewable energy source for human beings, and it is also a clean energy source that does not produce any environmental pollution. Fully and effectively utilizing solar energy is of great significance for solving energy shortages and environmental pollution. [0003] Whether it is a conventional crystalline silicon solar cell or a high-efficiency crystalline silicon solar cell, it needs to go through a high-temperature diffusion process to prepare a pn junction, which will bring lattice damage and various defects to the crystalline silicon, and introduce recombination centers to reduce the efficiency of the solar cell. . The pn heterojunction solar cells formed by the combination of amorphous silicon and crystalline silico...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/077H01L31/0352H01L31/0312H01L31/18
CPCH01L31/0312H01L31/035272H01L31/077H01L31/1804Y02E10/547Y02P70/50
Inventor 沈辉邱开富吴伟梁包杰
Owner 江苏润阳悦达光伏科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com