245results about How to "Improve interface quality" patented technology

A microelectronic flash memory device including a plurality of memory cells including transistors fitted with a matrix of channels connecting a block of common source to a second block on which bit lines rest, the transistors also being formed by a plurality of gates including at least one gate material, including a first selection gate coating the channels, a plurality of control gates coating the channels, a plurality of second selection gates each coating the channels of the same row and the matricial arrangement, at least one or more of the gates based on superposition of layers including at least one first layer of dielectrical material, at least one charge store zone, and at least one second layer of dielectrical material.

The invention discloses a light trapping structure for a thin film silicon/crystalline silicon heterojunction solar battery, which comprises a crystalline silicon substrate (2), a doped thin film silicon layer (3) on the crystalline silicon substrate (2), a transparent conductive electrode (4) on the doped thin film silicon layer (3), and a metal nano-structure (1) between the doped thin film silicon layer (3) and the transparent conductive electrode (4), a metal nano-structure (1) above the transparent conductive electrode (4), or a metal nano-structure (1) inside the transparent conductive electrode (4). The connecting surface of the crystalline silicon substrate (2) and the crystalline silicon substrate (2) is not specially woven with velvet. The light trapping structure acquires a light trapping effect by using a surface plasmon effect of the metal nano-structure.

A photovoltaic device is formed by depositing at least a first transparent electrode, PIN-structured or NIP-structured microcrystalline silicon layers, a second transparent electrode, and a back electrode in sequence on an electrically insulating transparent substrate. The PIN-structured or NIP-structured microcrystalline silicon layers include a p-type silicon layer, an i-type silicon layer, and an n-type silicon layer. At least one of the first transparent electrode and the second transparent electrode is a ZnO layer doped with Ga, and the Ga concentration is 15 atomic percent or less with respect to Zn.

The invention belongs to the technical field of clad material continuous casting, in particular to clad material solid/liquid composite dual-solidification continuous casting and forming equipment and method. The clad material solid/liquid composite dual-solidification continuous casting and forming equipment and method are characterized in that inversion solidification and forward solidification continuous casting and forming are combined, the measures that core materials are not heated in advance, an inversion solidification device with small capacity is designed, the core materials are prevented from penetrating through clad layer melt metal for a long time, the melt metal flows out from the bottom of a crucible by relying on self-weight, and the size of the inversion solidification device and the size of a water-cooled crystallizer are controlled effectively are taken, the high quality clad materials of needed shapes and sizes are formed through continuous casting, and the equipment and the method are especially suitable for continuous casting forming of the high quality clad materials with the melting point of the clad layer metal lower than that of the core material metal. The equipment and method have the advantages that the equipment is simple in structure, parts are easy to replace, operation and maintenance are convenient to carry out, layout is reasonable and compact, investment is small, industrialized application and popularization are facilitated, the procedure of the forming process is short, energy is saved, environment is protected, cost is low, the combination freedom of the clad layer metal and the core material metal is large, and the prepared clad materials are good in quality and performance.

The invention discloses an atomic layer deposition Al2O3/HfO2 method for regulating an energy band offset between a GaAs semiconductor and a gate dielectric. The method comprises the following steps of: firstly, cleaning a GaAs substrate to remove oil stains and oxide layers; secondly, immersing the cleaned GaAs substrate in aqueous solution of (NH4)2S to form Ga-S and As-S bonds on the surface of the GaAs substrate and further remove an unnecessary As elementary substance and As oxides; and finally, placing the passivated GaAs substrate into an ALD reaction chamber immediately to perform deposition of a HfO2/Al2O3 nano laminated film. The method optimizes and improves the interface property between the gate dielectric and the GaAs substrate, regulates the energy band offset between n-GaAs and a gate dielectric film, and improves the electrical properties of the gate dielectric film by changing the Al/Hf proportion, and has the advantages of simple process and important application prospect in preparation of GaAs-based MOSFETs.

The invention relates to a method for fabricating an integrated circuit with a resistance memory, comprising the following steps: providing an interlaminar dielectric layer comprising a core component area and a peripheral circuit area; forming a first interconnection structure and a second interconnection structure in the interlaminar dielectric layer; respectively forming a first dielectric layer and a second dielectric layer on the surface of the first interconnection structure and on the surface of the second interconnection structure; forming first conductive layers covering the interlaminar dielectric layer, the first dielectric layer and the second dielectric layer; removing a first conductive layer and a second conductive layer on the peripheral circuit area to expose the second interconnection structure and only keeping the first conductive layer on the first dielectric layer in the core component area; and respectively forming a second conductive layer and a third conductive layer on the first conductive layer of the first dielectric layer and on the second interconnection structure. Due to the adoption of the method for fabricating the integrated circuit with the resistance memory, when the resistance memory is formed, the interlaminar interconnection structure of the core component area and the peripheral circuit area can be also formed.

The invention discloses a semiconductor structure and a forming method thereof. The forming method of the semiconductor structure comprises the steps as follows: a semiconductor substrate is provided; a gate structure which covers partial surface of the semiconductor substrate is formed; a source and a drain are respectively formed in the semiconductor substrate at two sides of the gate structure; a dielectric layer is formed on the semiconductor substrate; the surface of the dielectric layer is higher than the top surface of the gate structure; a through hole is formed in the dielectric layer and exposes the surfaces of the source and the drain; an oxidation layer is formed on the surfaces of the source and the drain at the bottom of the through hole; a metal material layer is formed on the surface of the oxidation layer; an annealing treatment is carried out; the metal material layer reacts with the oxidation layer to form a metal oxide layer and a metal semiconductor compound layer; and the metal semiconductor compound layer is located on the surface of the metal oxide layer. The contact resistance between the source and the drain of the semiconductor structure formed by the method and the metal semiconductor compound layer is relatively small.

The invention discloses a stacked gate dielectric GaN-based insulated gate high-electron mobility transistor, mainly to solve the problem that existing similar devices are low in reliability. The device comprises a substrate (1), an AlN nucleation layer (2), a GaN buffer layer (3), an AlN insertion layer (4), an AlGaN barrier layer (5), a GaN cap layer (6), a SiN passivation layer (7), a gate dielectric layer (8) and a SiN protection layer (9) from bottom to top, wherein two ends of the GaN buffer layer (3) are provided with a source electrode (10) and a drain electrode (11); the middle of the gate dielectric layer (8) is provided with a gate electrode (12); a metal interconnection layer (13) is arranged on the source electrode (10) and the drain electrode (11); and the gate dielectric layer (8) adopts a stacked structure formed by an AlN dielectric insertion layer (81) and a high k dielectric layer (82). The interface characteristics and the gate control capability of the device are improved, the reliability is improved, and the stacked gate dielectric GaN-based insulated gate high-electron mobility transistor can serve as a high-efficiency microwave power device.

The invention discloses a forming method for a high-interface-bonding-strength copper/aluminum composite material, and belongs to the technical field of metal laminar composite material preparing. According to the forming method, to-be-combined surfaces of a copper plate and an aluminum plate are machined, macroscopic rugged to-be-combined surfaces are obtained, a louvre blade is adopted for conducting grinding treatment on the to-be-combined surfaces, the direction of stripes formed through grinding is perpendicular to the rolling direction, then, the copper plate and the aluminum plate are overlapped up and down or arranged left and right side by side to be in butt joint, and a copper/aluminum assembly is obtained; then, single-pass low-rolling-reduction cold rolling pre-composition is conducted, high-temperature short-time heating is conducted, finally, single-pass hot rolling final composition is conducted, and the high-interface-bonding-strength copper/aluminum composite materialis obtained. The forming method has the advantages that the capability requirement for a rolling machine needed for producing the copper/aluminum composite material is low, the technology is simple, the production cost is low, a macroscopic composite interface of a non-flat artificial structure and a microcosmic composite interface of a particle pinning structure can be obtained, the interface bonding strength is larger than or equal to 90 MPa, the applicable copper/aluminum composite material range is wide, and industrial popularization is easy.

The invention discloses an epitaxial wafer for a flip infrared light-emitting diode, and belongs to the technical field of epitaxy of light emitting diodes. Layers are epitaxially formed on the same side of a substrate in sequence; an active layer comprises InGaAs quantum well layers and GaAsP barrier layers which alternate periodically; the period number is 2 to 6; the active layer adopts an InGaAs/GaAsP strain compensation quantum well structure; the strain compensation quantum well can restrain carriers to flow in place transversely to form non-radiative recombination by mistake, so that the quantum efficiency is improved.

The invention discloses a formation method of a transistor. The method comprises the following steps: providing a semiconductor substrate including a first area, wherein a dielectric layer is formed on the surface of the semiconductor substrate, and the dielectric layer is internally provided with a first groove exposing a part of the surface of the first area of the semiconductor substrate; forming a gate medium material layer on the surface of the inner wall of the first groove and the dielectric layer; forming a protective material layer on the gate medium material layer; forming an adherence material layer on the protective material layer by use of a physical vapor deposition technology; forming a first work function material layer by use of an atomic layer deposition technology, wherein the material of the adherence material layer is the same as the material of the first work function material layer; forming a grid metal layer on the first work function material layer, wherein the grid metal layer fills up the groove; and performing planarization processing on the grid metal layer, the first work function material layer, the adherence material layer, the protective material layer and the grid medium material layer by taking the surface of the dielectric layer as a stop layer so as to form a first grid structure disposed in the first groove. The method provided by the invention can improve the performance of the transistor.

Devices with embedded silicon or germanium nanocrystals, fabricated using ion implantation, exhibit superior data-retention characteristics relative to conventional floating-gate devices. However, the prior art use of ion implantation for their manufacture introduces several problems. These have been overcome by initial use of rapid thermal oxidation to grow a high quality layer of thin tunnel oxide. Chemical vapor deposition is then used to deposit a germanium doped oxide layer. A capping oxide is then deposited following which the structure is rapid thermally annealed to synthesize the germanium nanocrystals.

The invention discloses a chemical mechanical grinding method which includes the following steps: a wafer to be ground is arranged on a first grinding pad; first grinding is conducted the wafer by first grinding liquid; the first grinding liquid has a first pH value, so the wafer to be ground can be separated from the first grinding pad; first cleaning liquid is sprayed on the surface of the wafer to be ground to conduct first cleaning; the first cleaning liquid has a second pH value; an absolute value of a difference between the first and second Ph values is no more than 1; after the first cleaning, the wafer to be ground is placed on a second grinding pad; second grinding is conducted to the wafer to be ground via second grinding liquid; the second grinding liquid has a third pH value; and an absolute value of a difference between the third pH value and the second pH value is no more than 1. Acid-base conflict can be prevented for the surface of the wafer to be ground, so plenty of microcosmic particles can be prevented from appearing on the surface of the wafer to be ground; and scraps to the surface of the wafer to be ground by the microcosmic particles during the second grinding can be avoided.

The invention provides an ultraviolet light emitting diode epitaxial wafer and a manufacturing method thereof, which belong to the technical field of semiconductors. The ultraviolet light emitting diode epitaxial wafer comprises a substrate, a buffer layer, an undoped AlGaN layer, an N-type layer, an active layer and a P-type layer, the buffer layer, the undoped AlGaN layer, the N-type layer, theactive layer and the P-type layer are sequentially stacked on the substrate, the active layer comprises a plurality of quantum well layers and quantum barrier layers which alternately grow periodically, the quantum well layers are Si-doped AlxGa1-xN layers, x is greater than 0 but smaller than 0.4, thequantum barrier layer is Mg-dopedAlyGa1-yN layer, and y is greater than 0.5 but smaller than 0.7.The ultraviolet light emitting diode epitaxial wafer can effectively shield a built-in electric field generated by a polarization effect in the quantum well layer, so that the wave function overlapping rate of electrons and holes can be improved, the radiation recombination efficiency of the electrons and the holes can be improved, and finally the internal quantum efficiency of the ultraviolet light-emitting diode is improved.

The invention relates to an epitaxial growth method for reducing interface thermal resistance of a gallium nitride high-electron-mobility field-effect transistor. An epitaxial material is grown through a vapor phase epitaxial growth method of metal organic matter chemical vapor deposition and the like. A gallium nitride epitaxial wafer comprises a substrate, a lower aluminium nitride nucleating layer, an upper aluminium nitride nucleating layer, a gallium nitride transition layer, a gallium nitride buffer layer, a barrier layer and a cap layer from the bottom up in sequence. The carrier gasesused in the growing process of the lower aluminium nitride nucleating layer and the upper aluminium nitride nucleating layer are hydrogen and nitrogen respectively. The carrier gas used in the growingprocess of the gallium nitride transition layer is nitrogen. The carrier gas used in the growing process of the gallium nitride buffer layer is hydrogen or a mixture of hydrogen and nitrogen. Throughthe carrier gas conversion process, the method reduces defect density in the aluminum nitride nucleating layer and the gallium nitride layer, improves interface quality of the aluminum nitride nucleating layer and the gallium nitride layer, and effectively reduces the interface thermal resistance of the gallium nitride high-electron-mobility field-effect transistor.

The invention provides a new quantum well structure, which can further effectively increase the recombination probability of carrier, improve quantum efficiency and realize optimization and improvement of efficiency of a photoelectric device. AlInGaN is used as a barrier, an In and Al component gradual barrier layer structure is designed to substitute barrier layer structure design of the conventional quantum well structure. The In component is doped into the barrier layer structure of the quantum well, the band bending of the quantum well is reduced, a quantum confined stark effect is weakened, the electron blocking efficiency of an electron barrier layer is improved, a hole injection efficiency of the quantum well is increased, spatial wave function overlap of electrons and space is increased, and these have a positive effect on improvement of luminous efficiency of an LED (Light Emitting Diode); meanwhile the Al component is doped into the barrier layer structure of the quantum well, so migration of the electrons to a P layer is effectively blocked; through the gradual component design of the AlInGaN, the influence of a polarization electric field can be reduced, and the spontaneous emission spectrum strength of the quantum well is improved.

Method and apparatus for forming thin silicon oxide films on silicon carbide substrates utilizing an afterglow thermal reactor. The method of forming thin silicon oxide film includes the steps of loading a silicon carbide substrate within a tube, which tube is heated, and the contents pressure is controlled. An oxidizing gas is then passed through an afterglow reactor source or microwave cavity where the gas achieves an excited state of energy. When the neutral species of the excited gas contact the silicon carbide substrate within the heated region of the the tube, a thin silicon oxide film forms on the substrate, at a faster rate and lower temperature than has been known. The tube contents are maintained at a temperature between 600° C. to 1,200° C., and at a pressure less than 50 torr.

The invention relates to a back-surface tunnel oxidation and passivation inter-digitated type back-to-back contact battery production method, comprising: removing the damage layer of a silicon wafer and making velvets; and then forming an N + front surface field on the front surface of the silicon wafer; removing the phosphor silicate glass (PSG) layer and performing edge insulation and back polishing; growing an ultra-thin tunnel oxide layer SiO2 on the back of the silicon wafer; forming an inter-digitated type polysilicon layer composed of a polysilicon layer of B-doped and P-doped pairs; depositing an aluminum oxide layer and a hydrogenated amorphous silicon nitride passivation antireflective layer on the surface of the N + front surface field; and growing a silicon layer on the back side of the wafer; printing Ag/Al slurry on the back side of the battery corresponding to the B-doped region through the use of the screen printing method; printing the Ag slurry in the P-doped region; and then, drying the slurries in an oven. The invention utilizes an ultra-thin tunnel oxidation SiO2 layer and an interdigitated phosphorous-doped and boron-doped silicon layer, which greatly alters the interface quality of the silicon substrate and greatly reduces the composition of the back surface metal and the semiconductor surface.

The invention relates to an epitaxial structure with an interposed layer quantum well semiconductor laser. The invention discloses a preparation method of a semiconductor laser with a special structure. The structure comprises from the top to the bottom a GaAs substrate, a GaAs buffer layer, an AIGaAs lower restriction layer, an AIGaAS lower waveguide layer, an active layer, an AIGaAs upper waveguide layer, an AIGaAs upper restriction layer and a GaAs cover layer. In the structure, a thin InGaAs layer whose GaAs or InP or In component content is quite low (compared to the In component in a quantum well) is inserted between the quantum well and the barrier of the active layer, so that the quality adaption between the quantum well and the barrier can be effectively relieved, the interface quality is improved, the stress is lowered, a quite low threshold current density is obtained, and the photoelectric performance of the semiconductor laser device is improved.

The invention is a dielectric layer making method, placing a substrate in a furnace tube and developing a silicon oxide layer on the substrate, then converting the silicon oxide layer into a silicon oxynitride layer, then, developing a silicon oxide layer on the silicon oxynitride, and a silicon oxynitride/silicon nitride/silicon oxide overlapped layer dielectric layer on the substrate. The technique is completed in the same furnace tube.

The invention discloses a semiconductor structure, a forming method thereof and a field effect transistor. The semiconductor structure comprises a substrate, an interface layer, a dielectric layer and a metallic layer, wherein at least a part of the upper surface of the substrate is a nonpolar face or semipolar face formed by a nitride semiconductor crystal; the interface layer is formed on the nonpolar face or semipolar face and is prepared from either a nitride or a nitric oxide; the dielectric layer is formed on the surface, far away from the substrate, of the interface layer; the metallic layer is formed on the surface, far away from the interface layer, of the dielectric layer. Thus, the interface layer can be formed on the nonpolar face or semipolar face of the surface of the substrate, then, unstable chemical bonds can be effectively prevented from being formed on the surface of the substrate, the interface quality is improved, and then, the interface performance of the semiconductor structure can be effectively improved.