13results about How to "Improve interface quality" patented technology

The application relates to a gallium nitride epitaxial structure forming method and a semiconductor device. The method comprises the following steps: sequentially forming a buffer layer, an intrinsic GaN layer and an AlGaN layer on a substrate; growing a P-type doped GaN epitaxial layer on the AlGaN layer, controlling the doping concentration and thickness of the P-type GaN layer, performing N-type ion implantation on the P-type GaN layer, controlling the implantation depth in the range of 20nm-30nm, and then performing annealing. In another mode, the AlGaN layer is subjected to P-type ion implantation before the P-type GaN layer is grown to form an asymmetric P-type doped area, and then annealing is performed, and the implantation area is still P-type after annealing by controlling the implantation dose. In the semiconductor device, the contact layer is obtained by patterning the P-type GaN layer, and the P-type doped area with the highest doping concentration or the largest doping area is arranged at the position of the contact layer. The gate breakdown voltage can be improved, the threshold voltage can be stabilized, the low on-resistance can be maintained, and the CMOS process compatibility can be realized.

The invention relates to the technical field of semiconductors, and provides a light-emitting diode, a preparation method thereof and a communication system. The light emitting diode comprises a substrate, a first semiconductor layer, an active layer and a second semiconductor layer which are stacked in sequence. The active layer comprises at least one group of quantum well layers and quantum barrier layers which are periodically and alternately stacked; the quantum well layer comprises an In component; the active layer further comprises at least one covering layer; the covering layer is located between the quantum well layer and the quantum barrier layer; the material of the covering layer is selected from a III-V group nitride semiconductor material, and the bond energy of a chemical bond formed by a metal element contained in the III-V group nitride semiconductor material and a nitrogen element is higher than the bond energy of In-N formed by an indium element and the nitrogen element in the quantum well layer. Through the above arrangement, mutual diffusion of In atoms in the quantum well containing the In component is effectively inhibited, a clear interface of the quantum well layer is maintained, and high-speed LED communication is further realized.

The invention discloses a solid-phase composite manufacturing device based on micro-macro wire feeding and a composite material manufacturing method.The solid-phase composite manufacturing device based on micro-macro wire feeding comprises a macro additive manufacturing module and a micro additive manufacturing module, and the macro additive manufacturing module comprises a first wire feeding mechanism and a first stirring head; a first spiral groove is formed in the periphery of one end of the first stirring head, the first wire feeding mechanism is used for conveying a base material towards the first spiral groove, the microscopic additive manufacturing module comprises a second wire feeding mechanism and a second stirring head, and the second stirring head is arranged in the first stirring head and can rotate relative to the first stirring head; a second spiral groove is formed in the periphery of the end, close to the first spiral groove, of the second stirring head. The second wire feeding mechanism is used for conveying reinforcing materials towards the second spiral groove. According to the solid-phase composite manufacturing device based on micro-macro wire feeding, the composite material with the reinforcing material distribution controllable can be manufactured, and the base material and the reinforcing material can be conveyed without shutdown.

The application discloses a diamond-based boron nitride film and a preparation method thereof, and relates to the technical field of semiconductor epitaxial materials. The preparation method comprises the following steps: sequentially polishing and cleaning and pretreating a single crystal diamond substrate; performing glow discharge cleaning treatment on a cavity, and increasing the temperature in the cavity to a growth temperature; performing glow discharge activation treatment on the surface of the pretreated single crystal diamond substrate; performing auxiliary glow discharge activation treatment on the surface of the single crystal diamond substrate after the glow discharge activation treatment; growing a boron nitride film on the surface of the single crystal diamond substrate after the surface treatment; reducing the growth temperature to room temperature to obtain a diamond-based boron nitride film after the temperature reduction treatment; and performing annealing treatment on the diamond-based boron nitride film after the temperature reduction treatment to obtain a finally prepared diamond-based boron nitride film. The method can simultaneously meet the key requirements of low damage, high nucleation activity and controllable stress release of the interface.

The application provides a homogenous multi-channel thin film transistor and a preparation method thereof. The preparation method comprises the following steps: preparing a gate electrode and a gate dielectric layer on a substrate in sequence; using an atomic layer deposition process to deposit at least two InGaO sub-channel layers on the gate dielectric layer in a direction away from the gate dielectric layer in sequence, and stacking the InGaO sub-channel layers to form a channel layer; during the deposition of each InGaO sub-channel layer, the same type of Ga precursor source and different types of In precursor source are used, or the same type of In precursor source and different types of Ga precursor source are used, so that each InGaO sub-channel layer has different carrier concentrations; during the deposition of each InGaO sub-channel layer, the sub-cycle periods are the same; performing a patterning treatment on the channel layer; preparing a source electrode and a drain electrode on the patterned channel layer to obtain the homogenous multi-channel thin film transistor. The application can simplify the preparation process, improve the interlayer interface quality, and does not need high-temperature annealing treatment.

This application relates to the field of metal material processing technology, and discloses a titanium-steel composite plate, its preparation method, and a ship. The titanium-steel composite plate includes a steel substrate layer, a pure titanium cladding layer, and an alloy layer, wherein the alloy layer is disposed between the steel substrate layer and the pure titanium cladding layer; wherein the alloy layer includes a Fe-intermediate element-Ti ternary alloy layer, and the Fe-intermediate element-Ti ternary alloy layer satisfies the following conditions along the direction from the steel substrate layer to the pure titanium cladding layer: the Fe content gradually decreases, the Ti content gradually increases, and the content of the intermediate element first gradually increases and then gradually decreases; the intermediate element is a transition element in the Fe-Ti system. This composite plate exhibits excellent interface quality, as well as excellent structural stability and corrosion resistance.

The invention discloses a composite device and method for preparing a double-metal gradient structure circular pipe through single-step deformation. The composite device comprises a first half die, a second half die, a first forming die, a second forming die, a clamp, a punch, a supporting rod and a taking-out rod, modular integrated design is adopted, and disassembly and combination are convenient. Through cooperative plastic flowing of the forming channel, the outer layer metal material and the inner layer metal material are stably combined in the one-time forming process, the problems of multi-pass machining, mold replacement and the like in a traditional technology are solved, and the production efficiency is remarkably improved. The gradient structure can effectively improve stress distribution between the inner metal layer and the outer metal layer, and the fatigue life and the overall service performance of the pipe are improved. The method is suitable for combination of various metal materials, has wide application prospects, and particularly has important application values in the fields requiring high strength, corrosion resistance, wear resistance and the like.

This application discloses a power device and its fabrication method. The power device includes a semiconductor device, a first electrode, a second electrode, a filler structure, and a thermal buffer layer. The semiconductor device includes a first surface and a second surface opposite to each other along its thickness direction. The first surface is provided with a first electrode and a control electrode, and the second surface is provided with a second electrode. The first electrode is in contact with the first electrode. The second electrode is in contact with the second electrode. The filler structure is disposed between the control electrode and the first electrode. The wall surface of the filler structure facing the first electrode is flush with or protrudes from the wall surface of the first electrode facing the first electrode. The filler structure includes a solid insulating element, and the thermal resistance of the solid insulating element is less than or equal to the thermal resistance of air. The thermal buffer layer is sandwiched between the control electrode and the filler structure. The control electrode forms contact with the first electrode at least through the thermal buffer layer and the solid insulating element. The thermal expansion coefficient of the thermal buffer layer is between the thermal expansion coefficient of the control electrode and the thermal expansion coefficient of the solid insulating element.

The application relates to a device and a method for preparing a fluorine-based glass optical fiber preform rod cladding hollow tube. In the device, by reducing the air pressure in a closed crucible environment and assisting with a constant rotation rate, dissolved gas in the glass liquid can be effectively removed, and a fluorine-based glass preform rod cladding hollow tube without bubbles, high uniformity and high interface quality can be automatically / semi-automatically prepared. The method has a short preparation period and is expected to be applied to the preparation of a fluorine-based optical fiber preform rod with a high-quality core-cladding structure.

The application provides an organic semiconductor longitudinal heterojunction monocrystal array and a preparation method thereof, and the preparation method comprises the following steps: providing a first silicon column template, a second silicon column template and a substrate; the first silicon column template and the second silicon column template are respectively provided with a first silicon column array and a second silicon column array, and the first silicon column template, the second silicon column template and the substrate are respectively provided with a first alignment mark, a second alignment mark and a third alignment mark; based on the melting point difference of different organic semiconductor systems, a longitudinal heterojunction monocrystal array with a determined crystal orientation and a controllable structure size is prepared through step-by-step melting, directional crystallization and alignment control. Compared with the traditional longitudinal heterojunction which is usually prepared layer by layer by using a solution method, the solvent is easy to damage the first layer of crystals when the second layer of crystals is formed, the step-by-step crystallization is realized by using the melting point difference in the application, the influence of the solvent on the first layer of crystals is avoided, and the application has the advantages of high controllability, good stability and strong applicability.

The invention discloses a synaptic device and a preparation method thereof. The synaptic device comprises an insulating substrate; the first electrode layer is positioned on the insulating substrate; the two-dimensional ferroelectric dielectric layer is located on a part of the first electrode layer; the two-dimensional semiconductor layer at least covers part of the two-dimensional ferroelectric medium layer, and the two-dimensional semiconductor layer covers at least part of the first electrode layer on one side of the two-dimensional ferroelectric medium layer; and a second electrode layer on the two-dimensional semiconductor layer on the two-dimensional ferroelectric layer. According to the synaptic device, the first electrode layer and the second electrode layer are respectively arranged below and above the two-dimensional ferroelectric dielectric layer, so that a depolarization field in the two-dimensional ferroelectric dielectric layer can be effectively inhibited, the ferroelectric polarization retentivity of the two-dimensional ferroelectric dielectric layer is remarkably improved, and the performance of the synaptic device is effectively improved.

This invention discloses a solution-based epitaxial growth method for perovskite thin films and its preparation method, belonging to the field of perovskite optoelectronic device technology. Addressing the difficulty of achieving high-quality multilayer structures and crystal orientation control using existing solution methods, this invention first prepares a perovskite template layer with a preferred orientation on a substrate, and then uses thermal shock treatment to induce rapid crystallization of a second precursor solution under the guidance of the template layer's lattice structure. This method utilizes a solvent with inverse temperature solubility (such as 2-methoxyethanol), effectively solving the solvent orthogonality problem and achieving epitaxial growth of perovskite crystals. The resulting thin film exhibits a (001) preferred orientation throughout its thickness direction, with a Herman orientation factor as low as −0.36 and a trap state density as low as 1.62 × 10⁻⁶. 15 cm −3 The perovskite solar cells prepared using this method achieve a photoelectric conversion efficiency of 25.58% and exhibit excellent stability under high temperature and high humidity conditions. This invention features a simple and low-cost process, and is suitable for large-area fabrication and various perovskite material systems.

The invention relates to a laminated cell and a preparation method thereof, the laminated cell comprises a narrow-band-gap bottom cell and a wide-band-gap top cell, and the preparation method comprises the following steps: preparing a hole transport layer on a transparent conductive substrate of the narrow-band-gap bottom cell; sequentially arranging a first inorganic salt layer and an organic salt layer on the surface of the hole transport layer to obtain a perovskite layer; evaporating a second inorganic salt layer on the surface of the perovskite layer to enable the second inorganic salt layer to react with residual organic salt on the surface of the perovskite layer, and annealing to obtain a passivation layer; and sequentially preparing an electron transport layer, a buffer layer, a conductive layer and an electrode layer on the passivation layer to obtain the laminated cell. According to the invention, the problem of surface organic salt residue in a dry-wet two-step method is overcome, and non-radiative recombination is reduced, so that the service life of a carrier is prolonged, the overall efficiency of the cell is improved, the sensitivity of a perovskite material to moisture and oxygen is reduced, and the long-term stability is improved; the quality of an interface between the perovskite thin film and the electron transport layer is improved, and charge recombination at the interface is reduced.