18results about How to "Guaranteed luminous efficiency" patented technology

This application provides a light-emitting diode (LED) and its fabrication method. The LED includes a stress-relieving layer and a quantum well layer protection structure. The quantum well layer protection structure includes at least one sequentially deposited cyclic structure. Each cyclic structure includes: an AlGaN barrier layer, a first AlN protective layer, a second AlN protective layer, a first AlInN protective layer, an InGaN well layer, a second AlInN protective layer, a third AlN protective layer, and a fourth AlN protective layer sequentially deposited on the stress-relieving layer. The In content in both the first and second AlInN protective layers gradually increases from away from the InGaN well layer to closer to the InGaN well layer. By setting the first and second AlInN protective layers, a high In content is ensured in the InGaN well layer, thereby obtaining a high-quality, high-efficiency red-yellow light InGaN well layer and ensuring the luminous efficiency of the LED.

The utility model relates to the technical field of LED lighting, in particular to a novel LED point light source structure which comprises a lamp holder, a lamp panel is arranged in the lamp holder, lamp beads are arranged on the surface of the lamp panel, connecting cables are arranged on the two sides of the lamp panel, a protective top shell is connected to the top of the lamp holder in a buckled mode, a lens is arranged on the top of the lamp panel, and the protective top shell and the lens are connected in a buckled mode. And an aluminum heat dissipation block is arranged at the bottom of the lamp holder. The novel modular design is adopted through the arrangement of the lamp holder, the lamp panel and the protective top shell, the heat dissipation opening is formed in the lamp holder, LED heat on the lamp panel can be better transmitted to the aluminum heat dissipation block, the heat dissipation effect is further improved, the lamp holder and the protective top shell are integrally designed, the aluminum heat dissipation block is arranged in the lamp holder, and the heat dissipation effect is further improved. Compared with a traditional heat dissipation structure design, heat dissipation performance is better, the light emitting efficiency and the service life are guaranteed, meanwhile, a sealing wire groove in the lamp holder and a sealing buckle on the protection top shell are arranged in a matched mode, a sealing connecting cable is fixed, and the waterproof effect of the connecting position of the sealing wire groove and the protection top shell is guaranteed.

The invention relates to the technical field of semiconductors, and discloses an LED epitaxial wafer for ultra-large current and a preparation method thereof, the LED epitaxial wafer comprises a substrate, and an AlN layer, a buffer layer, a first GaN layer, a second GaN layer, an N-type GaN layer, a stress release layer, a multi-quantum well layer, an electron barrier layer and a P-type GaN layer are sequentially arranged on the substrate; the stress release layer is of a periodic structure, each periodic structure comprises a third GaN layer, an In < x > Ga < 1-x > N layer and an Al < y > Ga < 1-y > N layer which are stacked in sequence, the third GaN layer, the In < x > Ga < 1-x > N layer and the Al < y > Ga < 1-y > N layer are subjected to recrystallization treatment after growth, and the recrystallization treatment is carried out in the atmosphere of N2 and NH3 at the temperature higher than or equal to 800 DEG C. By implementing the LED epitaxial wafer, stress can be released, the growth quality of the multi-quantum well layer is improved, and the luminous efficiency is ensured. Meanwhile, the working voltage of the LED chip under the ultra-large current can be reduced, and the luminance and the reliability are improved.

The invention discloses a light conversion material, an eye-protection screen protection film and a preparation method of the eye-protection screen protection film, and relates to the technical field of nano luminescent materials. The inorganic metal oxide or the inorganic non-metal oxide and the quantum dots are connected through a cross-linking material, and the inorganic metal oxide or the inorganic non-metal oxide is selected from nano silicon oxide, nano aluminum oxide, nano zinc oxide, nano zirconium oxide, nano calcium oxide, nano sodium oxide, nano manganese heptoxide or nano chromium trioxide; the particle size of the inorganic metal oxide or the inorganic non-metal oxide is 2-100 nm; the cross-linking material is selected from a silane coupling agent or a bifunctional ligand. The light conversion material and the eye protection screen protection film provided by the invention can prolong the service life of the nano luminescent material and maintain the stability of the light conversion efficiency of the light conversion material after long-term use.

The invention discloses a brightness compensation driving method for a bigrid regulation and control light-emitting device, and the method comprises the steps: applying a first driving current corresponding to a first gray-scale value to the bigrid regulation and control light-emitting device, and obtaining an actual gray-scale value of the bigrid regulation and control light-emitting device; according to the actual gray-scale value and the first gray-scale value, obtaining a gray-scale brightness difference value and the current first light-emitting efficiency of the bigrid regulation and control light-emitting device; obtaining a first gate voltage applied to the full-type regulation and control electrode and a second gate voltage applied to the single-type regulation and control electrode according to the preset required luminous efficiency, the actual gray-scale value and the first gray-scale value; repeating the above steps to obtain a first gate voltage and a second gate voltage corresponding to each gray-scale value of the bigrid regulation and control light-emitting device; and obtaining a current display gray-scale value of the bigrid regulation and control light-emitting device, and driving the bigrid regulation and control light-emitting device according to the first grid voltage, the second grid voltage and the driving current corresponding to the current display gray-scale value. According to the invention, regulation and control misalignment caused by mutual influence of double-end regulation and control can be avoided.

A high-brightness COB screen with a novel heat dissipation structure comprises a circuit substrate, LED light-emitting bodies, a heat conduction part, a light guide cover and a heat dissipation part, and the LED light-emitting bodies are distributed in an array mode and welded to the circuit substrate; the heat conduction parts are distributed on the circuit substrate in an array mode, wrap the LED light-emitting bodies and are made of transparent heat conduction materials. The light guide covers are distributed in an array mode and cover the heat conduction part, the ends, away from the heat conduction part, of the light guide covers are in a prismatic table shape, and the light guide covers are made of transparent heat conduction materials. The heat dissipation part is filled between the light guide covers and is connected with the circuit substrate. According to the utility model, heat directly generated by the LED luminous body is transferred to the heat dissipation part by utilizing the heat conduction part and the light guide cover, and is dissipated by the heat dissipation part; and heat generated by the circuit substrate is directly transmitted to the heat dissipation part for heat dissipation, so that the heat dissipation performance can be greatly improved through the structure. In addition, the lens structure formed by the heat conduction part and the light guide cover can change the transmission path of light rays, so that the moire phenomenon can be eliminated under the condition that the brightness is not lost.

The preparation method comprises the following steps: (1) taking aminobenzene sulfonic acid and trivalent metal salt, adding the aminobenzene sulfonic acid and the trivalent metal salt into deionized water and absolute ethyl alcohol, then adding sufficient ammonia water, and fully precipitating; (2) fully washing, centrifuging and drying the mixed solution containing the precipitate to obtain dried powder; and (3) fully grinding the dried powder, and calcining in a muffle furnace at high temperature to obtain the long-afterglow luminescent material. And (4) putting the high-temperature-resistant fibers or yarns into the pretreatment liquid for pretreatment, then taking out the pretreated fibers or yarns, putting the pretreated fibers or yarns into a dye vat, adding a dyeing solution containing a long-afterglow luminescent material to dye the fibers or yarns, performing reduction cleaning on the fibers or yarns after dyeing is completed, and then performing water washing and drying to obtain the high-temperature-resistant fibers or yarns. The long afterglow fiber or yarn is obtained. The long afterglow fiber or yarn prepared by the invention not only can keep stable luminescence performance in a high-temperature environment, but also can generate long afterglow at a high temperature.

The invention relates to the technical field of platinum complex phosphorescent materials, and particularly discloses an efficient solution-processable platinum complex luminescent material constructed by an AI E-HLCT ligand and application of the efficient solution-processable platinum complex luminescent material constructed by the AI E-HLCT ligand, the efficient solution-processable platinum complex luminescent material constructed by the AI E-HLCT ligand is prepared by taking an aggregation-induced hybrid local charge transfer (AI E-HLCT) material N, N '-(pyrimidine-4, 6-diyl-bis (4, 1-phenylene)) bis (N-([1, 1'-biphenyl]-4-yl)-[1, 1 '-biphenyl]-4-amine) as a CN bidentate ligand; 2, 2, 6, 6-tetramethyl-3, 5-heptanedione with a solubilizing function is adopted as the auxiliary ligand; the AI E-Pt complex PyBT-Pt-THD with the spiral space structure is invented through cooperation of a flexible AI E-HLCT ligand and metal Pt, and the AI E-Pt complex PyBT-Pt-THD has the AI E characteristic, can eliminate the aggregation-induced quenching effect (ACQ) and further improve the luminous efficiency, and meanwhile, the solubility is effectively improved, so that the AI E-Pt complex PyBT-Pt-THD can be processed in a solution.

The invention belongs to the technical field of fluorescent powder, and particularly relates to a coating method of silicate fluorescent powder. Comprising the following steps: (1) stirring and mixing silicate fluorescent powder, methyl silicone oil and a diol solvent I in proportion, pouring out supernatant after the mixture is settled, drying and sieving to obtain first powder; (2) adding the first powder into a diol solvent II, dropwise adding one or more of octyltrimethoxysilane, dodecyltrimethoxysilane, hexadecyltrimethoxysilane and 3-epoxypropyltrimethoxysilane for several times under a stirring condition, continuously stirring for 1-3 hours after dropwise adding is finished, and pouring away supernatant liquid after sedimentation, so as to obtain first powder; and drying and sieving. According to the coating method, a layer of transparent hydrophobic oil film can be formed on the surface of the fluorescent powder, so that the luminous decay of the fluorescent powder is reduced under the condition that the luminous efficiency of the silicate fluorescent powder is maintained.

The embodiment of the present invention discloses a display panel, a preparation method thereof and a display device, wherein the display panel comprises: an array substrate, the array substrate comprises an electrode and a first reflection groove; an LED, located on one side of the array substrate, the electrode comprises a first electrode, the first electrode is electrically connected to the LED; the orthographic projection of the LED on the array substrate overlaps at least partially with the first electrode; the orthographic projection of the first reflection groove on the surface of the array substrate is adjacent to the orthographic projection of the LED and / or the electrode on the surface of the array substrate. The embodiment of the present invention solves the problem of excessively high alignment accuracy requirements in the LED transfer process of the existing display panel, and can avoid excessive invalid LEDs due to insufficient alignment accuracy during the transfer process. At the same time, the first reflection groove can also be used to reflect part of the light emitted by the LED and emit it from the front of the display panel, thereby improving the utilization rate of the LED light and ensuring the light-emitting viewing angle and light-emitting efficiency of the display panel.

The utility model belongs to the technical field of pest control, and particularly relates to a garden mosquito killing device which comprises a lower cover and an upper cover, a lamp tube is fixedly assembled between the lower cover and the upper cover, a supporting rod is fixedly connected to the center of the interior of the lower cover, a threaded rod is rotationally connected to the position, located on the outer wall of the supporting rod, of the interior of the lower cover, and a lamp tube is fixedly assembled between the lower cover and the upper cover. A first gear is fixedly connected to one end of the screw rod, a screw tube is rotationally connected to the outer wall of the screw rod in a screwed mode, connecting rods are symmetrically and fixedly connected to one side of the screw tube, a protective tube is slidably connected to the outer wall of the lamp tube, the screw tube is fixedly connected with the protective tube through the connecting rods, and a cutting piece is fixedly connected to one end of the protective tube. The protective tube can be arranged outside the lamp tube in the daytime, so that the situations of cracking, aging and the like of the lamp tube caused by dew adhesion and sunlight exposure are prevented, the service life of the lamp tube is prolonged, meanwhile, the outer wall of the lamp tube is cleaned, dead mosquitoes are prevented from being adhered to the lamp tube, and the luminous efficiency is ensured.

This invention discloses a display panel, a method for fabricating the display panel, and a display device. The display panel includes: a substrate; multiple driving circuits located on one side of the substrate; multiple light-emitting elements located on the side of the driving circuits away from the substrate; the light-emitting elements are electrically connected to the driving circuits; each light-emitting element includes an anode, with at least some anodes located in different layers. By employing the above technical solution, misconnection between adjacent anodes is avoided, which is beneficial for accurate light emission from the display panel and improves its reliability. Furthermore, by adjusting the arrangement direction of the light-emitting elements, the distance between adjacent anodes can be reduced, increasing the number of light-emitting elements per unit area, thereby improving the resolution of the display panel and facilitating high-definition display.

The utility model discloses a vertical structure LED chip for a display screen, which relates to the technical field of semiconductors, and is characterized in that the cross section of a chip body is of a square structure, and the side length of the chip body ranges from 100 microns to 500 microns; the square structure is evenly divided into four areas anticlockwise according to the shape of a Chinese character'tian ', the P electrode columns are located in the third area, at most one N-type conductive column is arranged in any one of the first area, the second area and the fourth area, the small conductive columns are evenly distributed in the first area, the second area and the fourth area, the diameter range of the small conductive columns is 1-50 micrometers, and the diameter range of the small conductive columns is 1-50 micrometers. The distance between the adjacent conductive small columns ranges from 10 micrometers to 100 micrometers. According to the utility model, the square-structured chip areas are uniformly divided according to the shape of the Chinese character'tian ', and the P electrode columns, the N-type conductive columns and the small conductive columns are reasonably arranged, so that the uniformity of current distribution in the small-size vertical-structured LED chip can be effectively improved, thereby avoiding aggravation of heat effect and ensuring the luminous efficiency.

The present invention discloses a display device, comprising a frame, a light guide plate, a reflective sheet, a first colloid and a second colloid. The light guide plate is located on the frame. The reflective sheet is located between the light guide plate and the frame. The first colloid is located on a first surface of the reflective sheet adjacent to the light guide plate. The first colloid comprises a plurality of first colloid units. The plurality of first colloid units are arranged along a first direction and are separated from each other. Two ends of the first colloid have a first distance. The second colloid is located on a second surface of the reflective sheet adjacent to the frame and does not overlap the first colloid. The second colloid extends along the first direction. Two ends of the second colloid have a second distance, and the first distance is greater than the second distance.

The high-power UV lamp bead heat dissipation module comprises a UV lamp assembly and a heat dissipation assembly, the UV lamp assembly comprises a shell, a U-shaped plate arranged in the lower end of the shell, a connecting plate arranged at the top of the U-shaped plate and a plurality of UV lamp bead bodies arranged at the lower end of the connecting plate, a mounting hole is formed in the side wall of the shell, a lampshade is arranged at the lower end of the inner wall of the U-shaped plate, and the U-shaped plate is arranged in the lampshade. A plurality of heat dissipation holes are formed in the shell, the U-shaped plate and the connecting plate, and the heat dissipation assembly comprises a micro motor arranged in the mounting hole. According to the high-power UV lamp bead heat dissipation module, a micro motor is arranged to drive a heat dissipation fan to rotate to drive air in a U-shaped plate to flow, the flowing air discharges heat generated by UV lamp beads through heat dissipation holes, the flowing air is cooled through a circulating water tank and a cold water pipe, and therefore heat dissipation and cooling treatment is conducted on the interior of a UV lamp; and the luminous efficiency of the UV lamp is ensured, and internal components are prevented from being burnt out to influence the service life.

The invention discloses a preparation method of an epitaxial wafer and a semiconductor device comprising the epitaxial wafer. The method comprises the following steps: providing a substrate; sequentially epitaxially growing a laminated structure comprising an N-type layer, a light-emitting layer and a middle layer on the substrate; the stacked structure is pretreated, the pretreatment at least comprises a first step, and the first step comprises the steps that after an Mg source is introduced into the reaction chamber, thermal annealing treatment is carried out under a first condition; the first condition at least comprises a first annealing temperature; after pretreatment, epitaxially growing a P-type layer on the intermediate layer of the laminated structure; the first annealing temperature is higher than the growth temperature of the P-type layer, and the middle layer has the function of preventing Mg from diffusing into the light-emitting layer in the pretreatment process. According to the preparation method, the problem that P-type structure doping is difficult to reach the doping concentration set by the process due to the Mg doping memory effect is solved, the brightness and the antistatic release performance of the epitaxial wafer are improved, and the luminous efficiency of the epitaxial wafer is ensured.

The invention discloses a semiconductor chip and a preparation method thereof, and belongs to the technical field of semiconductors. The semiconductor chip comprises an epitaxial layer and a passivation layer, the passivation layer comprises a buffer layer, a gradient layer and a covering layer which are sequentially stacked on one side of the epitaxial layer, and the stacking direction of the buffer layer, the gradient layer and the covering layer is the growth direction of the epitaxial layer. According to the embodiment of the invention, the epitaxial layer can be effectively protected from being damaged under the condition that the luminous efficiency is ensured.

The LED lamp long in service life and convenient to replace comprises a ceiling, a fixing frame is fixedly mounted on the lower surface of the ceiling, a lamp panel is fixedly mounted in the fixing frame, a lampshade is mounted on the lower surface of the fixing frame, and a heat dissipation mechanism is arranged on the inner wall of the fixing frame; a connecting mechanism is arranged between the fixing frame and the lampshade. By using the heat dissipation mechanism, the grooves are uniformly formed in the inner wall of the fixing frame, the arc-shaped heat conduction plate is arranged, the heat conduction plate can quickly conduct heat generated by the lamp panel to the heat dissipation fins on the arc surface of the heat conduction plate, the heat dissipation fins are arranged in the grooves, the heat dissipation area is greatly increased, heat dissipation is accelerated, heat accumulation in the lamp is avoided, and the service life of the lamp is prolonged. Accelerated aging of key components such as lamp beads due to long-time high-temperature environment is prevented, so that the luminous efficiency and stability of the lamp are guaranteed, and the overall service life of the LED lamp is remarkably prolonged.