The invention provides an ultraviolet light emitting diode epitaxial wafer and a manufacturing method thereof, which belong to the technical field of semiconductors. The ultraviolet light emitting diode epitaxial wafer comprises a substrate, a buffer layer, an undoped AlGaN layer, an N-type layer, an active layer and a P-type layer, the buffer layer, the undoped AlGaN layer, the N-type layer, theactive layer and the P-type layer are sequentially stacked on the substrate, the active layer comprises a plurality of quantum well layers and quantum barrier layers which alternately grow periodically, the quantum well layers are Si-doped AlxGa1-xN layers, x is greater than 0 but smaller than 0.4, thequantum barrier layer is Mg-dopedAlyGa1-yN layer, and y is greater than 0.5 but smaller than 0.7.The ultraviolet light emitting diode epitaxial wafer can effectively shield a built-in electric field generated by a polarization effect in the quantum well layer, so that the wave function overlapping rate of electrons and holes can be improved, the radiation recombination efficiency of the electrons and the holes can be improved, and finally the internal quantum efficiency of the ultraviolet light-emitting diode is improved.