7results about How to "Guaranteed luminous efficiency" patented technology

This application provides a light-emitting diode (LED) and its fabrication method. The LED includes a stress-relieving layer and a quantum well layer protection structure. The quantum well layer protection structure includes at least one sequentially deposited cyclic structure. Each cyclic structure includes: an AlGaN barrier layer, a first AlN protective layer, a second AlN protective layer, a first AlInN protective layer, an InGaN well layer, a second AlInN protective layer, a third AlN protective layer, and a fourth AlN protective layer sequentially deposited on the stress-relieving layer. The In content in both the first and second AlInN protective layers gradually increases from away from the InGaN well layer to closer to the InGaN well layer. By setting the first and second AlInN protective layers, a high In content is ensured in the InGaN well layer, thereby obtaining a high-quality, high-efficiency red-yellow light InGaN well layer and ensuring the luminous efficiency of the LED.

The invention discloses a light conversion material, an eye-protection screen protection film and a preparation method of the eye-protection screen protection film, and relates to the technical field of nano luminescent materials. The inorganic metal oxide or the inorganic non-metal oxide and the quantum dots are connected through a cross-linking material, and the inorganic metal oxide or the inorganic non-metal oxide is selected from nano silicon oxide, nano aluminum oxide, nano zinc oxide, nano zirconium oxide, nano calcium oxide, nano sodium oxide, nano manganese heptoxide or nano chromium trioxide; the particle size of the inorganic metal oxide or the inorganic non-metal oxide is 2-100 nm; the cross-linking material is selected from a silane coupling agent or a bifunctional ligand. The light conversion material and the eye protection screen protection film provided by the invention can prolong the service life of the nano luminescent material and maintain the stability of the light conversion efficiency of the light conversion material after long-term use.

This invention discloses a display panel, a method for fabricating the display panel, and a display device. The display panel includes: a substrate; multiple driving circuits located on one side of the substrate; multiple light-emitting elements located on the side of the driving circuits away from the substrate; the light-emitting elements are electrically connected to the driving circuits; each light-emitting element includes an anode, with at least some anodes located in different layers. By employing the above technical solution, misconnection between adjacent anodes is avoided, which is beneficial for accurate light emission from the display panel and improves its reliability. Furthermore, by adjusting the arrangement direction of the light-emitting elements, the distance between adjacent anodes can be reduced, increasing the number of light-emitting elements per unit area, thereby improving the resolution of the display panel and facilitating high-definition display.

The utility model discloses a vertical structure LED chip for a display screen, which relates to the technical field of semiconductors, and is characterized in that the cross section of a chip body is of a square structure, and the side length of the chip body ranges from 100 microns to 500 microns; the square structure is evenly divided into four areas anticlockwise according to the shape of a Chinese character'tian ', the P electrode columns are located in the third area, at most one N-type conductive column is arranged in any one of the first area, the second area and the fourth area, the small conductive columns are evenly distributed in the first area, the second area and the fourth area, the diameter range of the small conductive columns is 1-50 micrometers, and the diameter range of the small conductive columns is 1-50 micrometers. The distance between the adjacent conductive small columns ranges from 10 micrometers to 100 micrometers. According to the utility model, the square-structured chip areas are uniformly divided according to the shape of the Chinese character'tian ', and the P electrode columns, the N-type conductive columns and the small conductive columns are reasonably arranged, so that the uniformity of current distribution in the small-size vertical-structured LED chip can be effectively improved, thereby avoiding aggravation of heat effect and ensuring the luminous efficiency.

The high-power UV lamp bead heat dissipation module comprises a UV lamp assembly and a heat dissipation assembly, the UV lamp assembly comprises a shell, a U-shaped plate arranged in the lower end of the shell, a connecting plate arranged at the top of the U-shaped plate and a plurality of UV lamp bead bodies arranged at the lower end of the connecting plate, a mounting hole is formed in the side wall of the shell, a lampshade is arranged at the lower end of the inner wall of the U-shaped plate, and the U-shaped plate is arranged in the lampshade. A plurality of heat dissipation holes are formed in the shell, the U-shaped plate and the connecting plate, and the heat dissipation assembly comprises a micro motor arranged in the mounting hole. According to the high-power UV lamp bead heat dissipation module, a micro motor is arranged to drive a heat dissipation fan to rotate to drive air in a U-shaped plate to flow, the flowing air discharges heat generated by UV lamp beads through heat dissipation holes, the flowing air is cooled through a circulating water tank and a cold water pipe, and therefore heat dissipation and cooling treatment is conducted on the interior of a UV lamp; and the luminous efficiency of the UV lamp is ensured, and internal components are prevented from being burnt out to influence the service life.

The invention discloses a semiconductor chip and a preparation method thereof, and belongs to the technical field of semiconductors. The semiconductor chip comprises an epitaxial layer and a passivation layer, the passivation layer comprises a buffer layer, a gradient layer and a covering layer which are sequentially stacked on one side of the epitaxial layer, and the stacking direction of the buffer layer, the gradient layer and the covering layer is the growth direction of the epitaxial layer. According to the embodiment of the invention, the epitaxial layer can be effectively protected from being damaged under the condition that the luminous efficiency is ensured.

The LED lamp long in service life and convenient to replace comprises a ceiling, a fixing frame is fixedly mounted on the lower surface of the ceiling, a lamp panel is fixedly mounted in the fixing frame, a lampshade is mounted on the lower surface of the fixing frame, and a heat dissipation mechanism is arranged on the inner wall of the fixing frame; a connecting mechanism is arranged between the fixing frame and the lampshade. By using the heat dissipation mechanism, the grooves are uniformly formed in the inner wall of the fixing frame, the arc-shaped heat conduction plate is arranged, the heat conduction plate can quickly conduct heat generated by the lamp panel to the heat dissipation fins on the arc surface of the heat conduction plate, the heat dissipation fins are arranged in the grooves, the heat dissipation area is greatly increased, heat dissipation is accelerated, heat accumulation in the lamp is avoided, and the service life of the lamp is prolonged. Accelerated aging of key components such as lamp beads due to long-time high-temperature environment is prevented, so that the luminous efficiency and stability of the lamp are guaranteed, and the overall service life of the LED lamp is remarkably prolonged.