Ultraviolet light emitting diode epitaxial wafer and manufacturing method thereof

Abstract

The invention provides an ultraviolet light emitting diode epitaxial wafer and a manufacturing method thereof, which belong to the technical field of semiconductors. The ultraviolet light emitting diode epitaxial wafer comprises a substrate, a buffer layer, an undoped AlGaN layer, an N-type layer, an active layer and a P-type layer, the buffer layer, the undoped AlGaN layer, the N-type layer, theactive layer and the P-type layer are sequentially stacked on the substrate, the active layer comprises a plurality of quantum well layers and quantum barrier layers which alternately grow periodically, the quantum well layers are Si-doped AlxGa1-xN layers, x is greater than 0 but smaller than 0.4, thequantum barrier layer is Mg-dopedAlyGa1-yN layer, and y is greater than 0.5 but smaller than 0.7.The ultraviolet light emitting diode epitaxial wafer can effectively shield a built-in electric field generated by a polarization effect in the quantum well layer, so that the wave function overlapping rate of electrons and holes can be improved, the radiation recombination efficiency of the electrons and the holes can be improved, and finally the internal quantum efficiency of the ultraviolet light-emitting diode is improved.

Description

technical field [0001] The disclosure relates to the technical field of semiconductors, in particular to an epitaxial wafer of an ultraviolet light emitting diode and a manufacturing method thereof. Background technique [0002] Short-wavelength ultraviolet light-emitting diodes based on AlGaN materials have a wide range of applications and are an important research content in the field of nitride semiconductor research. [0003] Epitaxial wafers are an important component in the manufacture of light-emitting diodes. The existing ultraviolet light-emitting diode epitaxial wafer includes a substrate, a buffer layer, an undoped AlGaN layer, an N-type layer, an active layer and a P-type layer stacked on the substrate in sequence. Wherein, the active layer includes alternately grown quantum well layers and quantum barrier layers. The quantum well layer is an AlGaN layer. [0004] However, AlGaN materials have strong spontaneous polarization and piezoelectric polarization effe...

AI Technical Summary

Problems solved by technology

[0004] However, AlGaN materials have strong spontaneous polarization and piezoelectric polarization effects. Therefore, there is a quantum confinement Stark effect caused by the polarization effect in the quantum well layer, which makes the wave functions of electrons and holes separated in space. resulting in low radiative recombination efficiency of electrons and holes

Moreover, a large number of defects in AlGaN materials will also act as non-radiative recombination centers, seriously affecting the internal quantum efficiency of UV light-emitting diodes.

Images