Light emitting diode epitaxial wafer and manufacturing method thereof

A technology of light-emitting diodes and manufacturing methods, which is applied to electrical components, circuits, semiconductor devices, etc., and can solve problems affecting LED luminous efficiency, lattice mismatch, energy band tilt, etc.

Pending Publication Date: 2021-02-12
HC SEMITEK ZHEJIANG CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there is a large lattice mismatch between the InGaN layer and the GaN layer, resulting in a large compressive stress between the InGaN layer and the GaN layer
Compressive stress will generate a piezoelectric polarization electric f

Method used

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  • Light emitting diode epitaxial wafer and manufacturing method thereof
  • Light emitting diode epitaxial wafer and manufacturing method thereof

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Embodiment Construction

[0026] In order to make the purpose, technical solution and advantages of the present disclosure clearer, the implementation manners of the present disclosure will be further described in detail below in conjunction with the accompanying drawings.

[0027] figure 1 is a schematic structural view of a light-emitting diode epitaxial wafer provided by an embodiment of the present disclosure, as shown in figure 1 As shown, the light-emitting diode epitaxial wafer includes a substrate 1 , and a low-temperature buffer layer 2 , a high-temperature buffer layer 3 , an N-type layer 4 , an active layer 5 and a P-type layer 6 stacked on the substrate 1 in sequence. The active layer 5 includes InGaN quantum well layers 51 and GaN quantum barrier layers 52 alternately grown in m periods.

[0028] The active layer 5 includes a first quantum well layer 511 close to the N-type layer 4 and b second quantum well layers 512 close to the P-type layer 6 . The In composition in the first quantum ...

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Abstract

The invention provides a light emitting diode epitaxial wafer and a manufacturing method thereof, which belong to the technical field of semiconductors. The light emitting diode epitaxial wafer comprises a substrate, and a low-temperature buffer layer, a high-temperature buffer layer, an N-type layer, an active layer and a P-type layer which are sequentially stacked on the substrate. The active layer comprises a first quantum well layers close to the N-type layer and b second quantum well layers close to the P-type layer, In components in the first quantum well layers are smaller than In components in the second quantum well layers, and the thickness of the first quantum well layers is larger than that of the second quantum well layers; in components in the a first quantum well layers areincreased layer by layer in the stacking direction of the epitaxial wafer, and the thicknesses of the a first quantum well layers are decreased layer by layer. According to the light emitting diode epitaxial wafer, the overlapping degree of wave functions of electrons and holes in spatial distribution can be increased, the energy band inclination phenomenon in the multi-quantum well layer is improved, and the internal quantum efficiency of an LED is improved.

Description

technical field [0001] The disclosure relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. As an efficient, environmentally friendly and green new solid-state lighting source, LED is a new generation of light source with broad prospects, and is being rapidly and widely used in traffic lights, car interior and exterior lights, urban landscape lighting, indoor and outdoor display screens and small-pitch displays. screen and other fields. [0003] Typically, GaN-based LEDs are epitaxially grown on sapphire substrates. The traditional GaN-based LED epitaxial structure generally adopts InGaN / GaN superlattice structure as the active layer. However, there is a large lattice mismatch between the InGaN layer and the GaN layer, re...

Claims

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Application Information

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IPC IPC(8): H01L33/06H01L33/32H01L33/00
CPCH01L33/06H01L33/32H01L33/007
Inventor 姚振从颖董彬忠李鹏
Owner HC SEMITEK ZHEJIANG CO LTD
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