Light emitting diode epitaxial wafer and manufacturing method thereof

Abstract

The invention provides a light emitting diode epitaxial wafer and a manufacturing method thereof, which belong to the technical field of semiconductors. The light emitting diode epitaxial wafer comprises a substrate, and a low-temperature buffer layer, a high-temperature buffer layer, an N-type layer, an active layer and a P-type layer which are sequentially stacked on the substrate. The active layer comprises a first quantum well layers close to the N-type layer and b second quantum well layers close to the P-type layer, In components in the first quantum well layers are smaller than In components in the second quantum well layers, and the thickness of the first quantum well layers is larger than that of the second quantum well layers; in components in the a first quantum well layers areincreased layer by layer in the stacking direction of the epitaxial wafer, and the thicknesses of the a first quantum well layers are decreased layer by layer. According to the light emitting diode epitaxial wafer, the overlapping degree of wave functions of electrons and holes in spatial distribution can be increased, the energy band inclination phenomenon in the multi-quantum well layer is improved, and the internal quantum efficiency of an LED is improved.

Description

technical field [0001] The disclosure relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. As an efficient, environmentally friendly and green new solid-state lighting source, LED is a new generation of light source with broad prospects, and is being rapidly and widely used in traffic lights, car interior and exterior lights, urban landscape lighting, indoor and outdoor display screens and small-pitch displays. screen and other fields. [0003] Typically, GaN-based LEDs are epitaxially grown on sapphire substrates. The traditional GaN-based LED epitaxial structure generally adopts InGaN / GaN superlattice structure as the active layer. However, there is a large lattice mismatch between the InGaN layer and the GaN layer, re...

AI Technical Summary

Problems solved by technology

However, there is a large lattice mismatch between the InGaN layer and the GaN layer, resulting in a large compressive stress between the InGaN layer and the GaN layer

Compressive stress will generate a piezoelectric polarization electric field, which reduces the overlap of electron and hole wave functions, resulting in a tilt of the energy band of the multi-quantum well layer, resulting in a decrease in internal quantum efficiency, thereby affecting LED luminous efficiency.

Images