Light-emitting diode epitaxial wafer and manufacturing method thereof

Abstract

The invention discloses a light-emitting diode epitaxial wafer and a manufacturing method thereof, belonging to the technical field of semiconductors. Each quantum well layer of the multi-quantum well layer of the light-emitting diode epitaxial wafer includes the first quantum well sublayer, the second quantum well sublayer and the third quantum well sublayer stacked in sequence, and the In / The Ga ratio is greater than or equal to the In / Ga ratio of the first quantum well sublayer and the third quantum well sublayer; the first quantum well sublayer is doped with Si; each quantum barrier layer includes the first quantum barrier sublayer stacked in sequence , the second quantum barrier sublayer and the third quantum barrier sublayer; the Si / Ga ratio of the second quantum barrier sublayer is greater than or equal to the Si / Ga ratio of the first quantum barrier sublayer and the third quantum barrier sublayer. The light-emitting diode epitaxial wafer can improve the energy band tilt phenomenon in the multi-quantum well layer, increase the overlapping degree of the wave function of the electron and the hole in the space distribution, and improve the internal quantum efficiency of the LED.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] GaN (gallium nitride) is one of the materials for making LED (Light Emitting Diode, light-emitting diode) epitaxial wafers. GaN is an extremely stable compound and a hard high-melting point material. It is also a direct transition wide-bandgap semiconductor material. It not only has good Physical and chemical properties, but also has a high electron saturation rate. Good thermal conductivity, large bandwidth and small dielectric constant and strong anti-radiation ability can be used to prepare high-power devices with good stability, long life, corrosion resistance and high temperature resistance. [0003] Typically, GaN-based LEDs are epitaxially grown on sapphire substrates. The traditional GaN-based LED epitaxial structure generally uses the InGaN / GaN superlattice s...

AI Technical Summary

Problems solved by technology

However, there is a large lattice mismatch between the InGaN layer and the GaN layer, resulting in a large compressive stress between the InGaN layer and the GaN layer

Compressive stress will generate a piezoelectric polarization electric field, which reduces the overlap of electron and hole wave functions, resulting in a tilt of the energy band of the multi-quantum well layer, resulting in a decrease in internal quantum efficiency, thereby affecting LED luminous efficiency.

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