White light source containing three-band-gap photonic crystals and preparation method for white light source

A technology of photonic crystals and white light sources, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of difficult control of the ratio of three primary colors, light reabsorption, and affecting luminous efficiency

Active Publication Date: 2016-09-21
JIANGMEN POLYTECHNIC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as a light source, semiconductor quantum dots have problems in luminous stability, and the mixture of red, green and blue three primary color quantum do

Method used

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  • White light source containing three-band-gap photonic crystals and preparation method for white light source
  • White light source containing three-band-gap photonic crystals and preparation method for white light source
  • White light source containing three-band-gap photonic crystals and preparation method for white light source

Examples

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Embodiment 1

[0062] (1) Monodisperse silica particles are purchased directly, with a monodispersity of less than 3% and a particle size of 200-400 nm. Choose three monodisperse particles with particle sizes of 205 nm, 238 nm, and 293 nm. Silica particles act as seeds.

[0063] (2) Preparation of fluorescent particles

[0064] (a) Surface modification of monodisperse silica particles: Silica particles of three different particle sizes were redispersed in methanol respectively, and the concentration of silica was 5 wt%. Then add aminosilane (quality is SiO 2 10wt% of ), the solution was heated under reflux overnight, centrifuged, the obtained powder was washed 2-3 times with methanol and deionized water, and finally dispersed in ethanol respectively to obtain three kinds of silica solutions modified by amino groups with different particle sizes, The concentration of silicon dioxide is 2%. Use a small amount of hydrochloric acid solution to adjust the pH value of the amino-modified silicon ...

Embodiment 2

[0073] (1) Monodisperse silica particles are purchased directly, with a monodispersity of less than 3% and a particle size of 200-400 nm. Choose three monodisperse particles with particle sizes of 210 nm, 245 nm, and 300 nm. Silica particles act as seeds.

[0074] (2) Preparation of fluorescent particles

[0075] (a) Surface modification of monodisperse silica particles: Silica particles of three different particle sizes were redispersed in methanol respectively, and the concentration of silica was 3 wt%. Then add aminosilane (quality is SiO 2 6wt% of ), the solution was heated under reflux overnight, centrifuged, the obtained powder was washed 2-3 times with methanol and deionized water, and finally dispersed in ethanol respectively to obtain three kinds of silica solutions modified by amino groups with different particle sizes, The concentration of silicon dioxide is 2%. Use a small amount of hydrochloric acid solution to adjust the pH value of the amino-modified silicon d...

Embodiment 3

[0083](1) Preparation of monodisperse poly(styrene-methyl methacrylate-acrylic acid) (P(St-MMA-AA)) particles: P(St-MMA-AA) particles were prepared by one-step emulsion polymerization become. Weigh 0.25 g ammonium bicarbonate NH 4 HCO 3 Put it into a 100 mL three-neck flask, add 15 mL of emulsifier sodium dodecylbenzenesulfonate solution (concentration: 1 g / L), weigh 9.5 g of monomer styrene, 0.5 g of methyl methacrylate, and 0.5 g of acrylic acid Add to the flask, add deionized water, and keep the volume of the aqueous phase in the flask at 50 mL. Dissolve 0.2 g of initiator ammonium persulfate in 10 mL of deionized water to prepare a solution for use. Turn on the stirrer to stir, and control the temperature of the water bath to be 70° C., add the initiator after 20 minutes for reaction. After 1.5 hours, the temperature was raised to 80°C and kept at this temperature for 4 hours. After the reaction, the product was collected to prepare monodisperse P(St-MMA-AA) particles...

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Abstract

The invention discloses a white light source containing three-band-gap photonic crystals and a preparation method for the white light source, belongs to the technical fields of light emission and illumination, relates to the application technology of photonic crystals, and particularly relates to a preparation method for improving the luminous intensity and stability of the white light source based on the three-photonic-band-gap characteristics of the three-band-gap photonic crystals and a coating technology. According to the preparation method, mono-dispersion red, green and blue three-fundamental-color fluorescent granules are prepared separately through the coating technology; then the solid-state luminous thin films of the three-band-gap photonic crystals are established by an automatic-assembling method in a layer-by-layer assembling manner; and next, the thin films are combined with an ultraviolet LED to prepare the white light source with the excellent luminescence property.

Description

technical field [0001] The invention belongs to the technical field of light emission and lighting, and relates to the application technology of photonic crystals, in particular to a preparation method for improving the luminous intensity and stability of a white light source by using the three-photon bandgap characteristics of the triple-bandgap photonic crystal and coating technology. Background technique [0002] Compared with traditional lighting sources such as incandescent lamps and fluorescent lamps, white light has the advantages of safety and environmental protection, no radiation, low energy consumption, high brightness, long life, compact structure, small size, planarization, light weight, good directionality, fast response and shock resistance. , and the traditional white light source, due to high temperature and large Stokes shift will cause great energy loss, its luminous efficiency has almost reached their physical limit, and semiconductor-based white light can...

Claims

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Application Information

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IPC IPC(8): H01L33/50H01L33/48
CPCH01L33/48H01L33/504H01L33/505H01L2933/0033H01L2933/0041
Inventor 徐朝华李珩孙宁
Owner JIANGMEN POLYTECHNIC
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