LED (Light-Emitting Diode) epitaxial structure and preparation method thereof
A technology of epitaxial structure and light shielding layer, applied in electrical components, circuits, semiconductor devices, etc., can solve the problem of light damage of quantum well layer, and achieve the effect of stable performance, good shielding effect and high melting point
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[0056] In the prior art LED epitaxial structure, a buffer layer, a sacrificial layer, an N-type gallium nitride layer, a quantum well layer, and a P-type gallium nitride layer are sequentially grown on the substrate, but when the substrate is peeled off with a laser , the laser will cause damage to the quantum well layer through the buffer layer, the sacrificial layer and the N-type gallium nitride layer. Through in-depth research on the prior art LED epitaxial structure, the inventor found that the buffer layer, the sacrificial layer and the N-type gallium nitride layer have low absorption efficiency for laser light, which causes the laser light to pass through the buffer layer, the sacrificial layer and the N-type gallium nitride layer. For the gallium nitride layer, when a light shielding layer is prepared between the sacrificial layer and the quantum well layer, the absorption rate of the light shielding layer to the laser light used to lift off the substrate is greater tha...
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