2results about How to "Composite fully" patented technology

The utility model discloses a Chinese herbal medicine compounding device for smoking cessation, which relates to the field of smoking cessation preparation production equipment, and comprises a mixing component which is arranged in an inner cavity of a mixing barrel and can mix Chinese herbal medicine liquid in the mixing barrel in different directions and at different depths; the two ends of the separation frame are fixedly connected with the inner wall of the mixing barrel; according to the Chinese herbal medicine compounding device for smoking cessation, a driving part drives a gear to rotate, the gear drives a rotating shaft to rotate in the same direction while rotating, meanwhile, a first rotating shaft, a connecting shaft and a second rotating shaft are driven to vertically ascend, and traditional Chinese medicine liquid in a mixing barrel is fully compounded; when the gear is engaged with the last stirring column I, the driving shaft continuously slides along the limiting groove to drive the rotating shaft I, the connecting shaft and the rotating shaft II to vertically descend, and the driving piece drives the gear to reversely rotate, so that the traditional Chinese medicine liquid can be compounded in different directions and can be compounded in different depths through reciprocating rotation, and the mixing effect is more uniform; and the liquid splashing and leakage phenomena are avoided.

This invention provides a high-voltage enhancement-mode HEMT device that suppresses current collapse, comprising a substrate, a GaN layer, and an Al layer. x Ga 1‑x N layer, Al x Ga 1‑x From left to right, the N-layer consists of a source, a P-GaN gate, a P-GaN hole injection structure, and a drain. A high-resistivity capping layer covers the P-GaN gate, gate metal, P-GaN hole injection structure, the upper surface of the drain, and the Al layer between the P-GaN gate source side and the drain. x Ga 1‑x In the upper surface region of the N-layer, the hole injection structure in this invention can be sufficiently close to the gate, allowing for more complete surface trap recombination. Simultaneously, it avoids long-distance surface charge transport, resulting in faster surface charge transfer and improved surface trap recombination efficiency, achieving the optimal hole injection effect. This invention suppresses current collapse without shortening the device drift region, thus avoiding a decrease in device breakdown voltage.