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This invention provides a high-voltage enhancement-mode HEMT device that suppresses current collapse, comprising a substrate, a GaN layer, and an Al layer. x Ga 1‑x N layer, Al x Ga 1‑x From left to right, the N-layer consists of a source, a P-GaN gate, a P-GaN hole injection structure, and a drain. A high-resistivity capping layer covers the P-GaN gate, gate metal, P-GaN hole injection structure, the upper surface of the drain, and the Al layer between the P-GaN gate source side and the drain. x Ga 1‑x In the upper surface region of the N-layer, the hole injection structure in this invention can be sufficiently close to the gate, allowing for more complete surface trap recombination. Simultaneously, it avoids long-distance surface charge transport, resulting in faster surface charge transfer and improved surface trap recombination efficiency, achieving the optimal hole injection effect. This invention suppresses current collapse without shortening the device drift region, thus avoiding a decrease in device breakdown voltage.