Electroluminescent device, manufacturing method thereof and display device

An electroluminescent device and a manufacturing method technology, applied in the direction of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of different electron mobility and hole mobility, and the limitation of hole transport layer material selection, etc. Achieve the effect of reducing production cost and ensuring luminous efficiency
CN105679958AActive Publication Date: 2016-06-15BOE TECH GRP CO LTD
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
BOE TECH GRP CO LTD
Publication Date
2016-06-15

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Abstract

The invention relates to the technical field of display and discloses an electroluminescent device, a manufacturing method thereof and a display device. An electron transmission layer of the electroluminescent device comprises a first film layer used for transmitting electrons and an adjusting structure in contact with the first film layer. The adjusting structure is used for adjusting the electron mobility of the electron transmission layer so as to realize matching of the electron mobility with the cavity mobility of a cavity transmission layer, so that the selection of the material of the cavity transmission layer is not limited, the production cost is lowered, and the luminescence efficiency of the device is ensured.
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Description

technical field

[0001] The invention relates to the field of display technology, in particular to an electroluminescence device, a manufacturing method thereof, and a display device. Background technique

[0002] As a zero-dimensional nanomaterial, quantum dot material has adjustable band gap, large specific surface area, and superior photoelectric performance. In recent years, it has attracted extensive attention in the fields of light-emitting diodes, solar cells, photodetectors, and displays. Especially in the field of display, electroluminescent quantum dot devices have achieved high luminous efficiency, and industrialization has gradually progressed.

[0003] For electroluminescent quantum dot devices, taking CdSe / ZnS, CdS / ZnS and other core-shell structure quantum dot luminescent materials as examples, the currently widely used device structure is anode / hole injection layer / hole transport layer / quantum dot luminescence layer / electron transport layer / cathode. The elec...

Claims

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