Resistance memory an a method for fabricating integrated circuit with same

Abstract

The invention relates to a method for fabricating an integrated circuit with a resistance memory, comprising the following steps: providing an interlaminar dielectric layer comprising a core component area and a peripheral circuit area; forming a first interconnection structure and a second interconnection structure which are respectively formed by a blocking layer and a metal wiring structure in the interlaminar dielectric layer; forming a blocking dielectric layer on the interlaminar dielectric layer; etching the blocking dielectric layer to expose the metal wiring structure of the core component area; forming a first dielectric layer on the metal wiring structure; forming a first conductive layer covering the blocking dielectric layer and the first dielectric layer; forming a masking film on the first conductive layer; etching the first conductive layer and the blocking dielectric layer until the second interconnecting structure is exposed; keeping the first conductive layer and a blocking dielectric layer on the first interconnecting structure; and forming a second conductive layer and a third conductive layer respectively on the first conductive layer and the second interconnecting structure. Due to the adoption of the method for fabricating the integrated circuit with the resistance memory, when the resistance memory is formed, the interlaminar interconnection structures of the core component area and the peripheral circuit area can be also formed.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for manufacturing a resistance memory and an integrated circuit containing the resistance memory. Background technique [0002] At present, the development of new storage technologies with low cost, high speed, high storage density, simple manufacturing and good compatibility with the current complementary metal oxide (CMOS) semiconductor integrated circuit process has attracted widespread attention worldwide. Resistive random access memory (RRAM) memory technology based on metal oxides with resistive switching characteristics is currently the focus of development by many device manufacturers, because this technology can provide higher density, lower cost and lower power consumption. power non-volatile memory. The resistance value of the RRAM memory cell will change greatly after the pulse voltage is applied, and this resistance value can still be ma...

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Problems solved by technology

[0004] Moreover, the manufacturing process of the resistive memory is usually to form the lower electrode 160 in the medium layer, then oxidize the material of the lower electrode to form the storage medium 170, and then form a photomask on the storage medium 170, Expose and develop the photomask to expose the storage medium 170, deposit and form the upper electrode 180 on the storage medium, and finally remove the photomask. After the storage medium 170 is formed, the storage medium 170 is stored. Multiple times of semiconductor manufacturing processes on the medium 170 will cause unnecessary damage to the interface structure of the storage medium 170 and affect the performance of the resistive memory

[0005] Moreover, in the prior art, for an integrated circuit containing a resistive memory, the formation process of the resistive memory and the interconnection structure of other memories in the integrated circuit are separately carried out, so the manufacturing process is complicated.

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