Resistance memory and method for fabricating integrated circuit with same

Abstract

The invention relates to a method for fabricating an integrated circuit with a resistance memory, comprising the following steps: providing an interlaminar dielectric layer comprising a core component area and a peripheral circuit area; forming a first interconnection structure and a second interconnection structure in the interlaminar dielectric layer; respectively forming a first dielectric layer and a second dielectric layer on the surface of the first interconnection structure and on the surface of the second interconnection structure; forming first conductive layers covering the interlaminar dielectric layer, the first dielectric layer and the second dielectric layer; removing a first conductive layer and a second conductive layer on the peripheral circuit area to expose the second interconnection structure and only keeping the first conductive layer on the first dielectric layer in the core component area; and respectively forming a second conductive layer and a third conductive layer on the first conductive layer of the first dielectric layer and on the second interconnection structure. Due to the adoption of the method for fabricating the integrated circuit with the resistance memory, when the resistance memory is formed, the interlaminar interconnection structure of the core component area and the peripheral circuit area can be also formed.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a resistance memory, an integrated circuit containing the resistance memory and a manufacturing method thereof. Background technique [0002] At present, the development of new storage technologies with low cost, high speed, high storage density, simple manufacturing and good compatibility with the current complementary metal oxide (CMOS) semiconductor integrated circuit process has attracted widespread attention worldwide. Resistive random access memory (RRAM) memory technology based on metal oxides with resistive switching characteristics is currently the focus of development by many device manufacturers, because this technology can provide higher density, lower cost and lower power consumption. power non-volatile memory. The resistance value of the RRAM memory cell will change greatly after the pulse voltage is applied, and this resistance value can still ...

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Problems solved by technology

[0004] Moreover, the manufacturing process of the resistive memory is usually to form the lower electrode 160 in the medium layer, then oxidize the material of the lower electrode to form the storage medium 170, and then form a photomask on the storage medium 170, Expose and develop the photomask to expose the storage medium 170, deposit and form the upper electrode 180 on the storage medium, and finally remove the photomask. After the storage medium 170 is formed, the storage medium 170 is stored. Multiple times of semiconductor manufacturing processes on the medium 170 will cause unnecessary damage to the interface structure of the storage medium 170 and affect the performance of the resistive memory

[0005] Moreover, in the prior art, for an integrated circuit containing a resistive memory, the formation process of the resistive memory and the interconnection structure of other memories in the integrated circuit are separately carried out, so the manufacturing process is complicated.

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