Resistive memory, integrated circuit including resistive memory and manufacturing method

Abstract

A method for manufacturing an integrated circuit containing a resistive memory, comprising: providing an interlayer dielectric layer including a core device area and a peripheral circuit area; forming a first interconnection structure and a second Two interconnect structures; forming a blocking dielectric layer on the interlayer dielectric layer; etching the blocking dielectric layer to expose the metal wiring in the core device area; forming a first dielectric layer on the metal wiring; forming a covering blocking dielectric layer and the first dielectric The first conductive layer of the first layer; form a mask on the first conductive layer, etch the first conductive layer and the blocking dielectric layer until the second interconnection structure is exposed, and the first conductive layer and the first interconnection structure on the first interconnection structure remain A blocking dielectric layer; forming a second conductive layer and a third conductive layer on the first conductive layer and the second interconnection structure respectively. The method can realize the interlayer interconnection structure of the core device area and the peripheral circuit area while forming the resistance memory.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for manufacturing a resistance memory and an integrated circuit containing the resistance memory. Background technique [0002] At present, the development of new storage technologies with low cost, high speed, high storage density, simple manufacturing and good compatibility with the current complementary metal oxide (CMOS) semiconductor integrated circuit process has attracted widespread attention worldwide. Resistive random access memory (RRAM) memory technology based on metal oxides with resistive switching characteristics is currently the focus of development by many device manufacturers, because this technology can provide higher density, lower cost and lower power consumption. power non-volatile memory. The resistance value of the RRAM memory cell will change greatly after the pulse voltage is applied, and this resistance value can still be ma...

AI Technical Summary

Problems solved by technology

[0004] Moreover, the manufacturing process of the resistive memory is usually to form the lower electrode 160 in the medium layer, then oxidize the material of the lower electrode to form the storage medium 170, and then form a photomask on the storage medium 170, Expose and develop the photomask to expose the storage medium 170, deposit and form the upper electrode 180 on the storage medium, and finally remove the photomask. After the storage medium 170 is formed, the storage medium 170 is stored. Multiple times of semiconductor manufacturing processes on the medium 170 will cause unnecessary damage to the interface structure of the storage medium 170 and affect the performance of the resistive memory

[0005] Moreover, in the prior art, for an integrated circuit containing a resistive memory, the formation process of the resistive memory and the interconnection structure of other memories in the integrated circuit are separately carried out, so the manufacturing process is complicated.

Images