Light trapping structure for thin film silicon/crystalline silicon heterojunction solar battery

Abstract

The invention discloses a light trapping structure for a thin film silicon/crystalline silicon heterojunction solar battery, which comprises a crystalline silicon substrate (2), a doped thin film silicon layer (3) on the crystalline silicon substrate (2), a transparent conductive electrode (4) on the doped thin film silicon layer (3), and a metal nano-structure (1) between the doped thin film silicon layer (3) and the transparent conductive electrode (4), a metal nano-structure (1) above the transparent conductive electrode (4), or a metal nano-structure (1) inside the transparent conductive electrode (4). The connecting surface of the crystalline silicon substrate (2) and the crystalline silicon substrate (2) is not specially woven with velvet. The light trapping structure acquires a light trapping effect by using a surface plasmon effect of the metal nano-structure.

Description

technical field [0001] The invention relates to a light-trapping structure for thin-film silicon / crystalline silicon heterojunction solar cells, in particular to a light-trapping structure for thin-film silicon / crystalline silicon heterojunctions using the surface plasmon effect of metal nanostructures Light-trapping structure of solar cells. Background technique [0002] Thin-film silicon / crystalline silicon heterojunction solar cells are high-efficiency crystalline silicon solar cells that can be realized at low cost. This kind of solar cell uses a doped thin film silicon layer to make a pn junction on a crystalline silicon substrate. This layer of thin-film silicon layer is usually only a dozen nanometers thick, and can be deposited below 200°C by plasma-assisted chemical vapor deposition (PECVD). Therefore, compared with traditional solar cells that rely on diffusion to prepare pn junctions , Thin-film silicon / crystalline silicon heterojunction solar cells require less...

AI Technical Summary

Problems solved by technology

In particular, in order to obtain an excellent light-trapping effect for ordinary solar cells, it is necessary to weave the surface of the crystalline silicon substrate. For example, use an alkaline etching solution to etch a pyramid structure on the surface of the silicon wafer. With a higher density of defect states, the difficulty of passivating the heterojunction interface is further increased

This is the main reason why it is difficult for many research institutions to obtain high-performance thin-film silicon / crystalline silicon heterojunction solar cells

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