14 results about "Metal nanostructures" patented technology

Disclosed herein is a method of detecting zinc pyrithione (ZPT) in a sample such as water, waste water, shampoos, etc. The method includes steps of, (a) contacting the sample with a substrate having a layer of metal nanostructure deposited thereon thereby coating the layer of metal nanostructure of the substrate with the sample; and (b) subjecting the sample coated substrate to Raman spectroscopy analysis; wherein, the presence of peaks at 575, 829, 1136 and 1545 cm−1 in Raman spectrum indicates the presence of ZPT in the sample. According to embodiments of the present disclosure, the method may detect ZPT in a concentration ranging from 0.1 ng / mL to 8 μg / mL.

The present disclosure provides a high-sensitivity terahertz sensor. The high-sensitivity terahertz sensor includes a substrate; a metal microstructure array, including a plurality of metal microstructure units, and covering the substrate to form a metasurface; and metal nanostructures, located at gaps of the metal microstructure array, where the metal microstructure array and the metal nanostructures are formed by etching a metal film on the substrate through pulsed laser direct writing. The present disclosure utilizes the metasurface and the metal nanostructures to cooperatively enhance the terahertz wave, promoting full interaction between the terahertz wave and the analyte and improving terahertz detection sensitivity.

The invention discloses a sub-5 nano metal gap array and a preparation method thereof. The base body comprises a substrate layer and a metal nanostructure array which is arranged on the substrate layer periodically, and each metal nanostructure is composed of a first metal layer; the side wall of the metal nano structure is coated with a second metal layer, a lateral nano gap is formed between the second metal layer and the first metal layer, and the width of the lateral nano gap is sub-5nm.

The invention relates to a component carrier and a method for producing the component carrier, in which the component carrier (100) comprises a stack (110) comprising at least one electrically conductive layer structure (120) and at least one electrically insulating layer structure (130), at least one surface (140) of the at least one electrically conductive layer structure (120) is divided into at least one first portion (150) and at least one second portion (160), the at least one first portion (150) and the at least one second portion (160) being adjacent to each other, the at least one first portion (150) having a higher conductivity than a conductivity of the at least one second portion (160), wherein metal nanostructures and / or microstructures (170) are provided on the at least one first portion (150).

This invention proposes a plasma microscopy imaging system, comprising an illumination device, a metal thin film assembly, a sample scanning stage, a microscopic imaging device, and a detection device. This invention excites plasma on a metal thin film using vortex-polarized light, causing the surface plasma centers to converge and obtain a sub-diffraction-limited excitation spot, achieving super-resolution optical imaging. The plasma microscopy imaging system of this invention uses single-beam illumination, resulting in a simple optical path; the sample is placed via the sample stage, eliminating the need for metal nanostructures and simplifying sample preparation; furthermore, this plasma microscopy imaging system exhibits a surface plasmon enhancement effect, providing sensitivity superior to general optical systems, achieving single-molecule detection levels; this plasma microscopy imaging system has no restrictions on fluorescent dyes and samples, and the system can be used for fluorescence signal imaging, Raman signal imaging, and other optical scattering signal imaging.

The application provides a semiconductor low-resistance ohmic contact structure based on LSPR and a preparation method, and belongs to the field of semiconductors. The low-resistance ohmic contact structure is integrated on the upper surface of the contact layer of a semiconductor epitaxial wafer, and comprises, from bottom to top, a plasmonic functional layer, a transparent conductive layer and a metal electrode; the plasmonic functional layer comprises a metal nanostructure layer and a dielectric spacer layer; the metal nanostructure layer is composed of a periodic nanoparticle array or a nanoisland array, is used for generating and regulating LSPR effect, and forms a strong local electric field; the dielectric spacer layer covers the surface and the periphery of the metal nanostructure layer, is used for passivating the metal nanostructure layer, fixing the LSPR characteristics of the metal nanostructure layer, and providing a controllable spacing. The application directly reduces the Schottky barrier through the physical field modulation effect of plasmonic resonance, realizes a substantial reduction of the contact resistance under the premise that the light transmittance of the transparent conductive layer is not significantly sacrificed, and solves the contradiction between high transparency and low resistance in the prior art.

The present invention relates to a metal nanostructure and a method for its preparation. A method for the preparation of a metal nanostructure is provided, comprising the reaction of an aqueous precursor solution with a metal salt, glycerol, and oxalic acid.

A light-emitting element and a method for manufacturing the light-emitting element are provided in the present disclosure. The light-emitting element includes: an anode layer and a cathode layer arranged opposite to each other, a light-emitting layer disposed between the anode layer and the cathode layer, a hole transport layer disposed between the light-emitting layer and the anode layer, an electron transport layer disposed between the light-emitting layer and the cathode layer, and at least one metal nanofilm layer including metal nanostructures, the metal nanofilm layer being arranged between the anode layer and the cathode layer and spaced apart from the light-emitting layer at at least one film layer.

A sensor element comprises a metallic nanostructure formed at edges of at least two microelectrodes on a non-electrically conductive substrate. The nanostructure is formed by depositing a solution comprising at least one metal salt and a stabilizing agent on the substrate at a detection site between the microelectrodes, and applying an AC electric field to the electrodes. The sensor elements may be used in sensing platforms such as surface-enhanced Raman scattering (SERS), surface plasmon resonance (SPR), localized surface plasmon resonance (LSPR), and in electrical-based sensing such as electrochemical sensing.

This invention discloses a method for preparing a nanoplasmic metasurface biosensor and its application in the detection of new psychoactive substances, belonging to the field of environmental monitoring technology. The invention forms a nanoplasmic metasurface by fabricating a nanopore array and a plasmonic-active metal layer on the sensor surface. The metal nanostructure generates a strong local electromagnetic field enhancement effect under photoexcitation. Subsequently, a stable, non-specific adsorption-resistant biological interface is formed through modification with a carboxyl / methoxy mixed thiol-polyethylene glycol self-assembled monolayer. After activation with N-hydroxysuccinimide / 1-ethyl-3-(3-dimethylaminopropyl)carbodiimide, the surface carboxyl groups are converted into active esters, facilitating covalent coupling of specific monoclonal antibodies against the target substance. Finally, antibody coupling allows the sensor to capture the target analyte through antigen-antibody specific binding, causing a change in the interfacial refractive index, which in turn leads to a shift in the plasmonic resonance peak, achieving optical signal conversion.

The utility model discloses a reflective color filter structure which comprises a substrate, a plurality of nanostructures distributed in an array mode are arranged on the substrate, and the nanostructures comprise more than two layers of metal nanostructures and more than two layers of medium nanostructures. The metal nanostructures and the medium nanostructures are alternately laminated from bottom to top, and the top layer and the bottom layer of each nanostructure are both metal nanostructures. According to the light filtering structure, light filtering is achieved through the color reduction principle, the sensitivity to angles is low, and light filtering can be achieved within the wide angle range; by modulating the period or the duty cycle of each nano structure, the filtering effect of different colors can be realized; the reflection efficiency of the reflection valley is very low, and the light energy utilization rate is greatly improved.

Disclosed are a method of manufacturing a working electrode for biosensors, the method including (a) providing a substrate, (b) forming a metal nanostructure on a surface of the substrate, (c) immobilizing a first linker compound on a surface of the metal nanostructure, and (d) binding a response factor to the first linker compound, a working electrode manufactured using the same, a biosensor including the working electrode, and a method of measuring the concentration of a biomarker in a sample using the biosensor.

The present disclosure provides a high-sensitivity terahertz sensor. The high-sensitivity terahertz sensor includes a substrate; a metal microstructure array, including a plurality of metal microstructure units, and covering the substrate to form a metasurface; and metal nanostructures, located at gaps of the metal microstructure array, where the metal microstructure array and the metal nanostructures are formed by etching a metal film on the substrate through pulsed laser direct writing. The present disclosure utilizes the metasurface and the metal nanostructures to cooperatively enhance the terahertz wave, promoting full interaction between the terahertz wave and the analyte and improving terahertz detection sensitivity.

According to the invention, the high-performance FeNi nanocone structure filtering supercapacitor electrode material is prepared. An electrochemical deposition method is utilized, a FeNi nanocone array structure is deposited on a titanium sheet in situ, and FeNi nanocone arrays with different cone tip curvatures are prepared by changing three parameters of electro-deposition temperature, electro-deposition time and electro-deposition current density. The supercapacitor based on the structure shows the area specific capacitance of 86.8 [mu] F / cm < 2 >, the equivalent series resistance of 0.68 ohm and the high impedance phase angle of-79.4 degrees under 120 Hz, meanwhile, after the FeNi nanocone supercapacitor is circulated for 20000 times under the current density of 0.2 mA cm <-2 >, the capacitance retention rate reaches 96%, and the capacitance retention rate reaches 96%. The FeNi nanocone array with the high-curvature structure has the advantages that the FeNi nanocone array with the high-curvature structure has good performance of converting alternating current into direct current and a low ripple coefficient of 5.2% in a 60Hz alternating current filtering test, the FeNi nanocone array with the high-curvature structure has good filtering performance in an alternating current filtering performance test, and meanwhile, the FeNi nanocones are completely made of metal, so that the FeNi nanocone array has more excellent conductivity compared with a carbon material. The invention provides possibility for application of a metal nanostructure material in the field of alternating current filtering.