8 results about "Metal nanostructures" patented technology

The present disclosure provides a high-sensitivity terahertz sensor. The high-sensitivity terahertz sensor includes a substrate; a metal microstructure array, including a plurality of metal microstructure units, and covering the substrate to form a metasurface; and metal nanostructures, located at gaps of the metal microstructure array, where the metal microstructure array and the metal nanostructures are formed by etching a metal film on the substrate through pulsed laser direct writing. The present disclosure utilizes the metasurface and the metal nanostructures to cooperatively enhance the terahertz wave, promoting full interaction between the terahertz wave and the analyte and improving terahertz detection sensitivity.

The invention discloses a sub-5 nano metal gap array and a preparation method thereof. The base body comprises a substrate layer and a metal nanostructure array which is arranged on the substrate layer periodically, and each metal nanostructure is composed of a first metal layer; the side wall of the metal nano structure is coated with a second metal layer, a lateral nano gap is formed between the second metal layer and the first metal layer, and the width of the lateral nano gap is sub-5nm.

The invention relates to a component carrier and a method for producing the component carrier, in which the component carrier (100) comprises a stack (110) comprising at least one electrically conductive layer structure (120) and at least one electrically insulating layer structure (130), at least one surface (140) of the at least one electrically conductive layer structure (120) is divided into at least one first portion (150) and at least one second portion (160), the at least one first portion (150) and the at least one second portion (160) being adjacent to each other, the at least one first portion (150) having a higher conductivity than a conductivity of the at least one second portion (160), wherein metal nanostructures and / or microstructures (170) are provided on the at least one first portion (150).

The application provides a semiconductor low-resistance ohmic contact structure based on LSPR and a preparation method, and belongs to the field of semiconductors. The low-resistance ohmic contact structure is integrated on the upper surface of the contact layer of a semiconductor epitaxial wafer, and comprises, from bottom to top, a plasmonic functional layer, a transparent conductive layer and a metal electrode; the plasmonic functional layer comprises a metal nanostructure layer and a dielectric spacer layer; the metal nanostructure layer is composed of a periodic nanoparticle array or a nanoisland array, is used for generating and regulating LSPR effect, and forms a strong local electric field; the dielectric spacer layer covers the surface and the periphery of the metal nanostructure layer, is used for passivating the metal nanostructure layer, fixing the LSPR characteristics of the metal nanostructure layer, and providing a controllable spacing. The application directly reduces the Schottky barrier through the physical field modulation effect of plasmonic resonance, realizes a substantial reduction of the contact resistance under the premise that the light transmittance of the transparent conductive layer is not significantly sacrificed, and solves the contradiction between high transparency and low resistance in the prior art.

The present invention relates to a metal nanostructure and a method for its preparation. A method for the preparation of a metal nanostructure is provided, comprising the reaction of an aqueous precursor solution with a metal salt, glycerol, and oxalic acid.

A light-emitting element and a method for manufacturing the light-emitting element are provided in the present disclosure. The light-emitting element includes: an anode layer and a cathode layer arranged opposite to each other, a light-emitting layer disposed between the anode layer and the cathode layer, a hole transport layer disposed between the light-emitting layer and the anode layer, an electron transport layer disposed between the light-emitting layer and the cathode layer, and at least one metal nanofilm layer including metal nanostructures, the metal nanofilm layer being arranged between the anode layer and the cathode layer and spaced apart from the light-emitting layer at at least one film layer.

This invention discloses a method for preparing a nanoplasmic metasurface biosensor and its application in the detection of new psychoactive substances, belonging to the field of environmental monitoring technology. The invention forms a nanoplasmic metasurface by fabricating a nanopore array and a plasmonic-active metal layer on the sensor surface. The metal nanostructure generates a strong local electromagnetic field enhancement effect under photoexcitation. Subsequently, a stable, non-specific adsorption-resistant biological interface is formed through modification with a carboxyl / methoxy mixed thiol-polyethylene glycol self-assembled monolayer. After activation with N-hydroxysuccinimide / 1-ethyl-3-(3-dimethylaminopropyl)carbodiimide, the surface carboxyl groups are converted into active esters, facilitating covalent coupling of specific monoclonal antibodies against the target substance. Finally, antibody coupling allows the sensor to capture the target analyte through antigen-antibody specific binding, causing a change in the interfacial refractive index, which in turn leads to a shift in the plasmonic resonance peak, achieving optical signal conversion.

Disclosed are a method of manufacturing a working electrode for biosensors, the method including (a) providing a substrate, (b) forming a metal nanostructure on a surface of the substrate, (c) immobilizing a first linker compound on a surface of the metal nanostructure, and (d) binding a response factor to the first linker compound, a working electrode manufactured using the same, a biosensor including the working electrode, and a method of measuring the concentration of a biomarker in a sample using the biosensor.