Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Sensor based on Fano resonance characteristics of dielectric nanostructure

A technology with nanostructure and resonance characteristics, applied in the field of optical sensors, to achieve the effect of enhancing interaction and improving sensitivity

Active Publication Date: 2015-02-25
NAT UNIV OF DEFENSE TECH
View PDF4 Cites 27 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage is that the medium nanostructures and optical mode fields that people usually study are bound inside the medium, and the resonance mode is not sensitive to changes in the surrounding environment.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Sensor based on Fano resonance characteristics of dielectric nanostructure
  • Sensor based on Fano resonance characteristics of dielectric nanostructure
  • Sensor based on Fano resonance characteristics of dielectric nanostructure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] The embodiment of the present invention provides three kinds of sensors based on the Fano resonance characteristics of silicon nanostructures, but the present invention is not limited to the dielectric material defined in this embodiment.

[0028] figure 1 (a) is a schematic diagram of the structure of the dielectric nanostructure array and the sensor of the present invention. Asymmetrical silicon nano-stripe pairs 1 are arranged in a uniform array on the transparent silica glass substrate 2. The silicon nano-stripe pairs 1 are composed of the first nano-stripe 101 and the second nano-stripe 102 arranged in parallel, each There is a nano groove in the middle part of the nano strip, and the depth of the groove is the same as the thickness of the nano strip. The external medium to be detected is surrounded by the silicon nano-strips, including the gaps between the nano-strips, the openings in the middle of the nano-strips, and around the upper surface of the nano-strips. It ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Lengthaaaaaaaaaa
Widthaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a sensor based on Fano resonance characteristics of a dielectric nanostructure. The sensor consists of a transparent substrate to light waves of a working wavelength range and asymmetrical dielectric nano bar pair arrays which are uniformly arranged on the transparent substrate. According to the low loss characteristics of dielectric materials and Fano resonance characteristics of the asymmetrical nano bar pair arrays, high Q-value resonance is generated. Meanwhile, an opening is introduced into a dielectric resonance unit, so that interaction between an electromagnetic field in a Fano resonance mode and ambient environment medium is effectively enhanced, and the sensitivity and quality factor of the sensor are improved. According to the sensor designed by the invention, the quality factor far exceeds that of a similar sensor based on the Fano resonance characteristics of a metal nanostructure, and the sensor disclosed by the invention has significant application prospects in the aspects of chemical and biological sensing, hazardous gas and pollutant monitoring.

Description

Technical field [0001] The invention relates to an optical sensor, in particular to a sensor based on the Fano resonance characteristic of a medium nanostructure. The sensor has the characteristic of being sensitive to the refractive index of the surrounding environment. Background technique [0002] Fano resonance originates from the interference between two electromagnetic eigenmodes, one of which is subradiation mode and the other is superradiation mode. In recent years, with the development of nanostructure manufacturing processes, the Fano resonance of nanostructures has attracted widespread attention. The nanostructured Fano resonance has a high quality factor, large local field enhancement, and its resonance characteristics are very sensitive to the surrounding environment of the nanostructure, so it is very suitable for the preparation of high-sensitivity biochemical sensors. [0003] For optical refractive index sensors, sensing sensitivity (S) and figure-of-merit (FOM) a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01N21/55G01N21/45
Inventor 张检发朱志宏袁晓东叶卫民刘伟刘肯郭楚才秦石乔曾淳
Owner NAT UNIV OF DEFENSE TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com