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849results about How to "Avoid quality loss" patented technology

Method for increasing yield of double cropping rice by turnover and fertilizer saving of Astragalus sinicus L. and straw in rice field

The invention belongs to the technical field of fertilizer-saving high-yield culture in agricultural production and relates to a method for increasing yield of double cropping rice by turnover and fertilizer saving of Astragalus sinicus L. and straw in a rice field. Specifically, the method includes that during growth of early rice, green Astragalus sinicus L. is overturned and pressed to return to the field so as to replace part of nitrogenous fertilizer, and during growth of late rice, straw of the early rice is returned to the field to replace part of nitrogenous fertilizer, and purposes for nitrogenous fertilizer conservation and high yield are achieved in the integral production cycle of double cropping rice. The method solves the problems that areas of vacant fields in winter are enlarged, the rice field is deteriorated, ecological cost for rice production is increased, and fertilizer utilization rate is seen low and the like in a rice cropping system of southern China. The method is a cultivating technology high in yield, nitrogenous fertilizer saving and lower in N2O emission and provided for increasing yield of the double cropping rice, reducing fertilizer investment and increasing fertilizer utilization rate.
Owner:CHINA AGRI UNIV

Method of fabricating light-emitting device and light-emitting device

A light-emitting device 100 has ITO transparent electrode layers 8, 10 used for applying drive voltage for light-emission to a light-emitting layer section 24, and is designed so as to extract light from the light-emitting layer section 24 through the ITO transparent electrode layers 8, 10. The light-emitting device 100 also has contact layers composed of In-containing GaAs, formed between the light-emitting layer section 24 and the ITO transparent electrode layers 8, 10, so as to contact with the ITO transparent electrode layers respectively. The contact layers 7, 9 are formed by annealing a stack 13 obtained by forming GaAs layers 7′, 9′ on the light-emitting layer section, and by forming the ITO transparent electrode layers 8, 10 so as to contact with the GaAs layers 7′, 9′, to thereby allow In to diffuse from the ITO transparent electrode layers 8, 10 into the GaAs layers 7′, 9′. This provides a method of fabricating a light-emitting device, in which the ITO transparent electrode layers as the light-emission drive electrodes are bonded as being underlain by the contact layers, to thereby reduce contact resistance of these electrodes, and to thereby make the contact layers less susceptible to difference in the lattice constants with those of the light-emitting layer section during the formation thereof.
Owner:SHIN-ETSU HANDOTAI CO LTD
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