In a chemical-mechanical
polishing (CMP) process,
semiconductor substrates are rotated against a
polishing pad in order to planarize substrate
layers. The condition of the
polishing pad directly affects the polishing rate of
material removal and uniformity of removal from the
semiconductor wafer. Conditioning of the polishing pad surface with an
abrasive improves polishing uniformity and rates, however, it has the detrimental affect of removing a quantity of pad material. A method and apparatus for monitoring polishing pad wear during
processing is developed to extend the pad's useful life, and maintain pad uniformity. This is accomplished in the present invention by measuring and monitoring the diminished pad thickness using a non-intrusive measurement
system, and creating a closed-loop
system for adjusting the chemical-mechanical polishing tool process parameters. The non-intrusive measurement
system consists of an interferometer measurement technique utilizing
ultrasound or
electromagnetic radiation transmitters and receivers aligned to cover any portion of the radial length of a polishing pad surface. The measurement system is sensitive to relative changes in pad thickness for uniformity, and to abrupt changes such as detecting
wafer detachment from the CMP
wafer carrier.