3results about How to "Improve defect density" patented technology

This invention belongs to the field of optoelectronic technology, specifically relating to a method for fabricating a controllable crystallization micron-scale perovskite light-emitting device based on solution pretreatment. The method includes the following steps: Step 1: Obtaining a patterned microporous substrate; Step 2: Pre-wetting and seed layer construction; Step 3: Deposition of the main perovskite layer; Step 4: Slow-release controllable crystallization; The spin-coated wet film is placed in a vapor atmosphere of a good solvent for treatment, followed by thermal annealing to form a perovskite thin film within the patterned micropores; Step 5: Fabrication of a controllable crystallization micron-scale perovskite light-emitting device based on solution pretreatment. This invention, using pre-wetting, seed guidance, slow-release crystallization, and vapor annealing on a patterned microporous substrate, achieves precise control over the entire process of film nucleation and growth kinetics within the confined space of the micropores, thereby achieving high-quality, uniform fabrication of perovskite thin films within micron-scale micropores, and ultimately obtaining a high-performance, highly uniform microarray perovskite light-emitting device.

The application relates to the technical field of semiconductor photoelectric devices and thin film manufacturing, and particularly discloses a preparation method of a light detector based on a sputtering hybrid semiconductor thin film. The prepared light detector comprises, from bottom to top, a transparent conductive substrate, a bottom charge transport layer, a hybrid semiconductor light absorption layer, a top charge transport layer and a metal electrode. The hybrid semiconductor light absorption layer is prepared by using a magnetron sputtering process based on target self-heating. The thermal electron emission effect of the target self-heating is used to excite high-density plasma at a low working voltage, to rapidly and lowly damage the target for sputtering, and to form a dense and pure-phase hybrid semiconductor thin film. The application uses a multi-dimensional method of adjusting the cathode surface magnetic flux, adjusting the working voltage and target self-heating to improve the plasma density in the chamber. While realizing high-speed deposition of 30-500 nm / min, the hybrid semiconductor thin film defect density is reduced and the photoelectric performance of the light absorption layer is improved.

The invention discloses a low-cost titanium alloy with a multi-scale structure and an electric heating coprocessing method thereof, and aims to design a novel Ti-Al-V-Mo-Fe series low-cost titanium alloy aiming at high strength and toughness requirements in the fields of aerospace, armor protection and the like, a dynamic recrystallization behavior is controlled through thermal deformation to form a micron-sized primary alpha-phase and fine grain beta-phase matrix (less than 1.4 microns), and the titanium alloy with the low-cost multi-scale structure and the electric heating coprocessing method of the titanium alloy with the low-cost multi-scale structure are prepared. Then low-voltage and short-time electric pulse treatment is adopted to further induce nucleation and growth of a nanoscale secondary alpha phase, and finally a multi-scale organization structure of an ultra-fine grain beta matrix, a micron-scale primary alpha lamellar phase and a dual-scale nanoscale secondary alpha phase is obtained; according to the method, the raw material cost is reduced by more than 30% through component optimization, rapid tissue regulation and control are achieved through the thermal deformation and electric pulse technology, the energy consumption is far lower than that of a traditional heat treatment mode, the preparation efficiency is remarkably improved, and technical feasibility is provided for large-scale industrial production of low-cost titanium alloy.