8results about How to "Improve defect density" patented technology

The invention belongs to the technical field of solid-state lithium metal batteries, and discloses an amorphous inorganic ion conductor and a preparation method and application thereof, and the preparation method comprises the following steps: uniformly mixing lithium tetrachloroaluminate and sodium tetrachloroaluminate to obtain a mixture; and melting the mixture to obtain a molten precursor, and cooling the molten precursor to room temperature to obtain the amorphous inorganic lithium ion conductor Li < x > Na < 1-x > AlCl4, x being greater than or equal to 0.15 and less than or equal to 0.85, wherein the amorphous inorganic lithium ion conductor Li < x > Na < 1-x > AlCl4 is used as an interface phase between a positive electrode of a solid-state lithium metal battery and a solid-state electrolyte. The amorphous LixNa1-xAlCl4 has the remarkable advantages that the preparation temperature is low, the crystal structure of the product can be controlled, the ionic conductivity of the product is high, and the compatibility with a solid electrolyte and a positive electrode material is good. The method is short in preparation period, low in cost and suitable for industrial application.

This invention discloses a type of steel for hydropower engineering and its preparation method. The steel comprises the following chemical components: C, Mn, Si, Alt, Nb, V, Ti, Cr, Ni, Mo, Cu, and B. Its yield strength is ≥950 MPa, tensile strength is ≥1000 MPa, and it exhibits excellent load-bearing capacity, meeting the structural material requirements for high-stress conditions in large-scale hydropower projects. Its impact value at -40℃ is ≥200 J, and its aging impact value at -40℃ is ≥200 J, demonstrating excellent low-temperature toughness and aging stability. It exhibits outstanding resistance to low-temperature brittle fracture and long-term service embrittlement, providing strong service safety and durability. It is suitable for critical load-bearing structures in hydropower projects operating in cold, high-stress, and long-term service conditions.

This invention belongs to the field of optoelectronic technology, specifically relating to a method for fabricating a controllable crystallization micron-scale perovskite light-emitting device based on solution pretreatment. The method includes the following steps: Step 1: Obtaining a patterned microporous substrate; Step 2: Pre-wetting and seed layer construction; Step 3: Deposition of the main perovskite layer; Step 4: Slow-release controllable crystallization; The spin-coated wet film is placed in a vapor atmosphere of a good solvent for treatment, followed by thermal annealing to form a perovskite thin film within the patterned micropores; Step 5: Fabrication of a controllable crystallization micron-scale perovskite light-emitting device based on solution pretreatment. This invention, using pre-wetting, seed guidance, slow-release crystallization, and vapor annealing on a patterned microporous substrate, achieves precise control over the entire process of film nucleation and growth kinetics within the confined space of the micropores, thereby achieving high-quality, uniform fabrication of perovskite thin films within micron-scale micropores, and ultimately obtaining a high-performance, highly uniform microarray perovskite light-emitting device.

The application relates to the technical field of semiconductor photoelectric devices and thin film manufacturing, and particularly discloses a preparation method of a light detector based on a sputtering hybrid semiconductor thin film. The prepared light detector comprises, from bottom to top, a transparent conductive substrate, a bottom charge transport layer, a hybrid semiconductor light absorption layer, a top charge transport layer and a metal electrode. The hybrid semiconductor light absorption layer is prepared by using a magnetron sputtering process based on target self-heating. The thermal electron emission effect of the target self-heating is used to excite high-density plasma at a low working voltage, to rapidly and lowly damage the target for sputtering, and to form a dense and pure-phase hybrid semiconductor thin film. The application uses a multi-dimensional method of adjusting the cathode surface magnetic flux, adjusting the working voltage and target self-heating to improve the plasma density in the chamber. While realizing high-speed deposition of 30-500 nm / min, the hybrid semiconductor thin film defect density is reduced and the photoelectric performance of the light absorption layer is improved.

The invention discloses a quasi-two-dimensional perovskite film doped with tri(4-morpholinyl)phosphine oxide, a preparation method thereof and an application thereof in a light-emitting device. The film comprises a quasi-two-dimensional perovskite and tri(4-morpholinyl)phosphine oxide; the molecular formula of the quasi-two-dimensional perovskite is L2A n‑1 B n X 3n+1 , wherein L is a positive monovalent organic ammonium ion, A is a monovalent cation, B is a divalent cation in a perovskite material, X is a monovalent anion, and n is a positive integer greater than 1. The present invention eliminates pinhole defects in a quasi-two-dimensional perovskite film by doping an appropriate amount of tri(4-morpholinyl)phosphine oxide into a perovskite precursor, passivates uncoordinated ion defects, adjusts the phase composition of the quasi-two-dimensional perovskite, and obtains a high-quality quasi-two-dimensional perovskite film with a low defect density without pinholes; the luminous efficiency and luminous intensity of the prepared light-emitting device are significantly improved. At the same time, the preparation method of the present invention is simple, repeatable, and low cost.

The invention provides a gas nitriding method of an iron-nickel-chromium austenite high-elasticity alloy. The method comprises the steps that the iron-nickel-chromium austenite high-elasticity alloy is subjected to high-temperature aging treatment, the temperature of the high-temperature aging treatment ranges from 750 DEG C to 830 DEG C, and the heat preservation time of the high-temperature aging treatment ranges from 3 h to 5 h; and the alloy subjected to high-temperature aging treatment is subjected to gas nitriding treatment. The aging temperature of the iron-nickel-chromium austenite high-elasticity alloy is increased to 750-830 DEG C, so that the hardness of the alloy is properly reduced, and the plasticity of the alloy is remarkably enhanced; the reduction of the hardness enables nitrogen atoms to enter more easily, so that the gas nitriding speed is accelerated, and finally the thickness and the surface hardness of a nitriding treatment layer are improved; and the plasticity is improved, so that the alloy has good ductility, and the ductility of the alloy reaches 10% or above.

The invention discloses a low-cost titanium alloy with a multi-scale structure and an electric heating coprocessing method thereof, and aims to design a novel Ti-Al-V-Mo-Fe series low-cost titanium alloy aiming at high strength and toughness requirements in the fields of aerospace, armor protection and the like, a dynamic recrystallization behavior is controlled through thermal deformation to form a micron-sized primary alpha-phase and fine grain beta-phase matrix (less than 1.4 microns), and the titanium alloy with the low-cost multi-scale structure and the electric heating coprocessing method of the titanium alloy with the low-cost multi-scale structure are prepared. Then low-voltage and short-time electric pulse treatment is adopted to further induce nucleation and growth of a nanoscale secondary alpha phase, and finally a multi-scale organization structure of an ultra-fine grain beta matrix, a micron-scale primary alpha lamellar phase and a dual-scale nanoscale secondary alpha phase is obtained; according to the method, the raw material cost is reduced by more than 30% through component optimization, rapid tissue regulation and control are achieved through the thermal deformation and electric pulse technology, the energy consumption is far lower than that of a traditional heat treatment mode, the preparation efficiency is remarkably improved, and technical feasibility is provided for large-scale industrial production of low-cost titanium alloy.

The invention discloses a microstructure influence experiment method for AB double-layer graphene irradiated by fast neutrons with different energies, and particularly relates to the field of material science and nuclear engineering, the experiment steps are as follows: step 1, determining a research target; 2, selecting parameters and setting a control group; 3, selecting and treating a sample; step 4, irradiation control; 5, observing microstructure characterization after irradiation; step 6, data statistics and analysis; and step 7, summarizing. The experimental method disclosed by the invention is simple to operate, according to the experimental method, the fast neutron irradiation has obvious influence on the microstructure of the AB double-layer graphene, the increase of the interlayer distance and the increase of the defect density can be seen, and the change is related to the energy and dosage of the irradiation, which indicates that the modification of the microstructure of the graphene by the irradiation condition has controllability.