Method for improving uniformity of p-type doping concentration in silicon carbide epitaxial wafer

A technology of doping concentration and silicon carbide, applied in chemical instruments and methods, diffusion/doping, crystal growth, etc., can solve problems such as reducing the p-type doping efficiency at the edge of epitaxial wafers, achieve excellent background concentration, realize doping Concentration uniformity, effect of enlarged selection window

Active Publication Date: 2018-11-13
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
View PDF5 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The efficiency of p-type doping at the edge of the epitaxial wafer can be reduced by adding hydrogen chloride in the air flotation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for improving uniformity of p-type doping concentration in silicon carbide epitaxial wafer
  • Method for improving uniformity of p-type doping concentration in silicon carbide epitaxial wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] The technical solutions of the present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0023] In order to improve the uniformity of the p-type doping concentration in the silicon carbide epitaxial wafer and reduce the doping concentration deviation of the center point and the edge point of the silicon carbide epitaxial wafer without changing the key process parameters of the epitaxy, the present invention proposes a method to improve the carbonization A method for uniformity of p-type doping concentration in a silicon epitaxial wafer.

[0024] The method for improving the uniformity of the p-type doping concentration in the silicon carbide epitaxial wafer of the present invention comprises the steps of:

[0025] (1) Select a silicon carbide substrate with a silicon surface of 4° or 8° to the direction, and place the substrate on the graphite base in the reaction chamber of the SiC epitaxial system;

[0026] (2...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method for improving the uniformity of p-type doping concentration in a silicon carbide epitaxial wafer. Based on a chemical vapor deposition growth technique, a small amountof silicon source, carbon source, hydrogen chloride, trimethylaluminum and the like are added into a substrate air-floating gas, and then a small amount of process gas is pushed to an edge of a graphite substrate by taking the air-floating gas as a carrier gas, so that the p-type doping efficiency of the edge of the substrate is finely adjusted. By adopting the method, the deviation of the dopingconcentration of an edge point and a center point caused by nonlinear depletion of the epitaxial wafer is effectively reduced, and the uniformity of the intra-wafer doping concentration of the epitaxial wafer is effectively optimized without changing key process parameters. The process is compatible with conventional SiC epitaxial processes, and has a relatively high promotion value.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials, and in particular relates to a method for improving the uniformity of p-type doping concentration in a silicon carbide epitaxial wafer. Background technique [0002] In recent years, with the continuous development of power electronics technology, the physical limitations of traditional power electronic devices based on silicon (Si) materials have become increasingly apparent, seriously restricting the device's operating voltage (<8kV), operating current, operating frequency, Improvements in operating temperature (<175°C), power dissipation and radiation resistance. [0003] At present, silicon carbide (SiC) material is internationally recognized as the next-generation power electronic device material. SiC power electronic devices have unique performance potentials such as ultra-high voltage (up to 40,000 volts), ultra-high current (up to thousands of amperes), ultra-high j...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B31/06
CPCC30B31/06
Inventor 李赟
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap