Annealing method to reduce defects of epitaxial films and epitaxial films formed therewith

An epitaxial thin film, low-defect technology, applied in chemical instruments and methods, from chemically reactive gases, crystal growth, etc., can solve the problem that the defect density of epitaxial thin films cannot be further reduced, and achieve the goal of reducing defect density and reducing lattice stress Effect

Inactive Publication Date: 2013-03-13
RITEDIA CORPORATION
View PDF14 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The main purpose of the present invention is to solve the problem that the existing annealing process cannot further reduce the defect density of the epitaxial film

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Annealing method to reduce defects of epitaxial films and epitaxial films formed therewith
  • Annealing method to reduce defects of epitaxial films and epitaxial films formed therewith
  • Annealing method to reduce defects of epitaxial films and epitaxial films formed therewith

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] The present invention relates to an annealing method for reducing the defects of epitaxial film, and the epitaxial film obtained by using the annealing method, please refer to Figure 1A to Figure 1D , is a schematic diagram of the manufacturing process of an embodiment of the present invention, such as Figure 1A As shown, a substrate 10 is first provided. In this embodiment, the substrate 10 has a thickness between 420 μm and 440 μm. The obtained sheet substrate, the upper surface 11 of the substrate 10 is the (0001) lattice plane (also called C-plane) of alumina, but the present invention is not limited to the (0001) lattice plane of alumina as the For the upper surface 11 , according to practical applications, a (1-102-) lattice plane (also called R-Plane) or a (0001) lattice plane (also called M-Plane) can also be selected as the upper surface 11 . In addition, in this embodiment, the sapphire ingot can be grown by Czochralski (Czochralski, CZ for short) method, Ed...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

An annealing method to reduce defects of epitaxial films and epitaxial films formed therewith. The annealing method includes features as follows: apply a pressure ranged from 10 MPa to 6,000 MPa to an epitaxial film grown on a substrate through a vapor phase deposition process and heat the epitaxial film at a temperature lower than the melting temperature of the epitaxial film. Through applying pressure to the epitaxial film, the lattice strain of the epitaxial film is alleviated, and therefore the defect density of the epitaxial film also decreases.

Description

technical field [0001] The invention relates to an annealing method of an epitaxial film and an epitaxial film obtained by the method, in particular to an annealing method capable of effectively reducing defects of the epitaxial film and an epitaxial film obtained therefrom. Background technique [0002] Epitaxial technology generally refers to the process of growing a single crystal film on a substrate. The obtained single crystal film is also called an epitaxial film. The substrate used for epitaxial growth is usually a single crystal grain with a specific direction of atomic order. According to the chemical composition and lattice type difference between the epitaxial film and the substrate, the epitaxial film can be divided into homoepitaxial (Homoepitaxy) or heterogeneous epitaxy (Heteroepitaxy), the former refers to the epitaxial film and the substrate are the same material, such Both are silicon or diamond; the latter means that the epitaxial film and the substrate ar...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/324H01L21/205
CPCH01L21/3245C30B25/02C30B25/10
Inventor 宋健民林逸樵
Owner RITEDIA CORPORATION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap