163results about How to "Reduce the number of defects" patented technology

The invention relates to a static magnetic field-laser coaxial composite fusion covering method and a device and belongs to the technical field of laser processing. A static magnetic field is provided by an electromagnet, and the coaxial compositing of the magnetic field and a laser beam is realized through a device. When in magnetic field-laser coaxial fusion covering, the magnetic field generation device moves coaxially and synchronously with the laser beam, the coupling of the magnetic field and a laser-induced molten pool flow field can be completed, the laser fusion covering process is completed through a preset or coaxial powder delivery way, the flowing of the laser-induced molten pool can be inhibited, so that a purpose for controlling the solidification structure, improving the surface shape of the fuse covering layer, optimizing the distribution of the stress and reducing the splashing phenomenon in the fuse covering process can be realized. The coaxial synchronous motion of the magnetic field and the laser can be realized. The static magnetic field-laser coaxial composite fusion covering method and device have the characteristics of good capacity for controlling the fuse covering layer, wide application range, simplicity in structure, convenience in popularization and the like.

The invention relates to a Fe-based austenite alloy oil sleeve, which comprises the following components in percentage by mass: less than or equal to 0.03 percent of C, less than or equal to 0.03 percent of P, less than or equal to 0.03 percent of S, 0.01 to 1.0 percent of Si, 0.01 to 3.0 percent of Mn, 25 to 40 percent of Ni, 20 to 35 percent of Cr, 1 to 5 percent of Mo, 0.1 to 1.5 percent of Cu, 0.01 to 0.5 percent of Al, less than or equal to 0.01 percent of O, and the balance of Fe and inevitable impurities. The 90 to 140 ksi steel-grade Fe-based alloy oil sleeve meeting different well depth requirements of high-acidity oil fields and gas fields is manufactured by thermal extrusion, 1,050-1,180 DEG C of solution treatment and cold rolling of the smelted and forged blanks.

There is provided a means for forming a protective film of a fluorine-containing polymer composition excellent in smoothness and adhesiveness on a photoresist. Moreover, there is provided a means for removing the protective film without impairing the underlying photoresist. A polymer coating composition obtainable by dissolving a fluorine-containing polymer compound in a solvent comprising a fluorinated acetal having a specific structure is applied on a photoresist and dried to form a protective film. The fluorinated acetal having the specific structure is suitable as a solvent for being brought into contact with a fluorine-containing polymer film, peeling the film, and forming a photoresist or a lithographic pattern.

Provided are methods of making a long-term implantable electronic device, and related implantable devices, including by providing a substrate having a first encapsulation layer that covers at least a portion of the substrate, the first encapsulation layer having a receiving surface; providing one or more electronic devices on the first encapsulation layer receiving surface; and removing at least a portion of the substrate from the first encapsulation layer; thereby making the long-term implantable electronic device. Further desirable properties, including device lifetime increases during use in environments that are challenging for sensitive electronic device components, are achieved through the use of additional layers such as longevity-extending layers and/or ion-barrier layers in combination with an encapsulation layer.

The invention provides a FinFET manufacturing method. Before or after a step of forming a high-k gate dielectric layer surrounding the two sides and the upper side of a fin, the fin is annealed in a mixed atmosphere of heavy hydrogen and inert gas, dangling bonds of silicon in the fin are eliminated, induced band gap state or oxygen vacancy at a fin interface are reduced, the problem of Fermi energy level pinning in the high-k dielectric layer is improved, and the fin interface is smoothed, thereby reducing the number of defects in the high-k dielectric layer, suppressing the charge trap effect, improving the threshold voltage drift and improving the performance of FinFET devices.

The invention provides a substrate and a manufacturing method thereof. The method comprises steps: an auxiliary substrate and a supporting substrate are provided, wherein at least a defect elimination structure, an epitaxial layer above the defect elimination structure and a passivation layer above the epitaxial layer are arranged on the auxiliary substrate, and at least a buried dielectric layer is arranged on the supporting substrate; the auxiliary substrate is bonded on the supporting substrate; the auxiliary substrate is removed; and chemical-mechanical planarization (CMP) is carried out until the epitaxial layer reaches a specified thickness. As defects of the epitaxial layer can be reduced by the defect elimination structure and damages of the epitaxial layer during the bonding process can be effectively reduced by the passivation layer, a large amount of defects can be prevented from being generated in the epitaxial layer, and the performance and the reliability of using the epitaxial layer to manufacture a device can be enhanced.

This invention relates to a process method for semiconductor materials of gallium nitride crystals including the following steps: (1) epitaxial growth of Ga nitride or Al nitride on a substrate (2) heat-deposition of crystal particles of silicon, silicon carbide, silicon nitride or silicon oxide (3) continuation of epitaxial growth of Ga nitride further growing undoped and doped Ga nitride film Dor LED, LD, HEMT etc. photoelectronic and electronic apparatus. The said substraet can be sapphire, SiC SiL GaAs, ZnO, MgO, LiAlO2 or Li GaO2 effectively reducing dislocation, overcoming mismatch of the substrate and epitaxial layer.

The invention relates to a method for reducing seed crystal growth face defects of silicon carbide crystals. The method comprises the following steps of: tightly pasting the Si faces of two seed crystals together, and putting the tightly pasted Si faces to a corrosive consisting of molten KOH and K2CO3; and heating up the mixture to 400 DEG C and corroding the C faces of the seed crystal growth faces under the constant-temperature condition of 400 DEG C, so that the seed crystal growth face defects of the silicon carbide crystals are reduced by corroding off the defects caused by grinding and polishing. According to the method disclosed by the invention, the defects, which are caused by grinding and polishing, on the C faces of the growth faces are quickly and simply corroded off on the condition of effectively protecting the Si faces on the growth back faces from being not corroded, so that the quantity of the defects on the growth faces is lower than that of the un-corroded defects by about five times, thereby reducing the crystal defects obtained by regeneration, improving the crystal quality and preventing the defects on the Si faces from being reversely sublimated and extended to the growth faces due to expansion.

A method for forming a semiconductor device comprises the following steps: providing a substrate; forming a dielectric layer on the surface of the substrate; forming a via exposing the substrate on the dielectric layer; forming a metal layer filling the via on the surface of the dielectric layer; carrying out heat treatment on the metal layer; and forming a covering layer on the surface of the metal layer after heat treatment. The invention can avoid bulge and defects on the surface of the metal layer and improve the performance of the device.

The invention relates to a low-chromium cast iron grinding ball and a casting method thereof. The low-chromium cast iron grinding ball contains carbon, silicon, manganese, chromium, nickel, molybdenum, copper, boron, lithium, sodium, rare-earth elements and essential impurity elements. The casting method comprises the following steps: preparing raw materials and an evaporative mold according to requirements, adding a simple substance sodium into the evaporative mold, and casting molten metal into the evaporative mold; and after the casting is cooled to 300-520 DEG C, taking out the casting, and carrying water quenching to finish the casting. The small-atom lithium and sodium are added, so that the sodium atoms and lithium atoms are diffused and filled in clearances of eutectic carbides or pores in the crystalline phase in the cast iron under high-temperature conditions, thereby greatly lowering the number of internal defects; and the boron powder and rare-earth elements can increase the quantity of the eutectic structures and enhance the dispersivity, so that the lithium atoms and sodium atoms can be filled and distributed in the whole structure, thereby enhancing the overall performance.

The invention relates to an operation method for increasing a high-density multi-valued storage characteristic of a non-volatile flash memory. The operation method comprises the following steps of: (1), adjusting an initial state of a local captured type non-volatile flash storage unit to threshold voltage of minus 2V to minus 1 V at first: adjusting to the threshold voltage by adopting a bilateral belt-belt tunnelling hot hole injection (BBHH) erasing method; and then carrying out a transient FN operation so as to promote charges in a channel to be distributed uniformly; (2), repetitively carrying out the step (1) for many times, wherein the initial state is adjusted to the threshold voltage of minus 2V to minus 1 V through the bilateral BBHH and FN operation steps, and the fact that the threshold voltage in a channel region is same everywhere is finally realized; (3), taking the threshold as the multi-valued storage initial state, and carrying out a multi-valued unitary programming operation on an NOR type local captured storage unit; and (4), carrying out a -FN process for a short time at one time after achieving a programming state. The operation method disclosed by the invention is capable of increasing holding characteristic and tolerance characteristic of a storage device.

The invention relates to a conductive agent for a negative electrode of a lithium ion battery and a preparation method for the battery containing the conductive agent. Silicon quantum dots SiQDs are mixed into micropores of carbon nanofibers CNFs by adopting an electrospinning technology, and a compound SiQDs/CNFs of the silicon quantum dots/carbon nanofibers is synthesized, and then the compoundSiQDs/CNFs is used as the conductive agent for the negative electrode of the lithium ion battery. The silicon quantum dots prepared in the method have a very small size, an effect of buffering the volume expansion of silicon particles can be effectively achieved by the micropore structures of the carbon nanofibers in a circulation process, the damage of the volume expansion of silicon in a lithiumintercalation process to an electrode structure is solved, and meanwhile, through the porous structures in the carbon nanofibers, a diffusion path of lithium ions can be greatly shortened, the diffusion speed of the lithium ions is increased, and solid-phase diffusion is improved. The battery designed by the composite conductive agent prepared by the method has a great improvement in the aspectsof the energy density, the power density and the cycling performance.

The invention relates to a preparation method of VW93M super-high-strength nano gradient magnesium alloy. The magnesium alloy is prepared from the following ingredients by mass percent: Mg, 8.0-9.6% of Gd, 1.8-3.2% of Y, 0.3-0.7% of Zr, 0.02-0.5% of Ag and 0.02-0.3% of Er, and the method comprises the following steps of enabling a semicontinuous casting ingot blank to be subjected to homogenization treatment, then squeezing to form a bar, afterwards, carrying out rotary forging deformation, controlling rotary forging temperature at 100-380 DEG C, pass deformation amount to be 5-20%, total deformation amount to be 5-60% and feed rate to be 1-4mm/min, keeping the feed direction unchangeable during deformation to prepare a nano gradient magnesium alloy bar of which the diameter is 3-30mm andthe length is 1,000-2,000mm. From the core of the bar to a side part, the grain sizes gradually increase from 30-100nm to 1-2 mu m, for the alloy which is combined with subsequent thermal treatment, the tensile strength at room temperature is greater than or equal to 530MPa, the yield strength is greater than or equal to 460MPa, and the elongation percentage after fracture is greater than or equalto 8%.

The invention relates to the field of titanium coil production, and discloses a method for controlling the surface quality of hot-rolled titanium coils. The method includes: sequentially heating, rough rolling, finish rolling and coiling a titanium slab formed by forging, wherein, in the During the finish rolling process, the surface of the titanium slab is purged with water. The surface quality of the hot-rolled titanium coil prepared by the surface quality control method of the present invention is significantly improved, the number of defects is greatly reduced, the types and probability of defects are correspondingly reduced, and the product quality is greatly improved. It is applied to cold rolling When using titanium coil blanks, the amount of grinding is greatly reduced, labor costs are saved, losses are reduced, production efficiency is improved, and the quality of cold-rolled titanium coils is also improved, and the method provided by the invention is low in input cost, simple in operation, and easy to implement .

The invention discloses a method for reducing impurity element nickel in a complex multi-element brass alloy, and belongs to the technical field of metal copper refining and impurity removal. The maintreatment process comprises raw material pretreatment, melting, refining, slag removal and casting treatment. The complex multi-element brass alloy raw material is firstly pretreated by raw materialpretreatment process, impurities unrelated to copper materials are picked out, after being melted in an induction furnace at the temperature of 1100 -1300 DEG c, added the 0.1%-5 % (weight percentage)refining agent elementary substance boron which is coated with the copper foil and the raw material is subjected to heat preservation for 5-20 minutes, and adding a slag remover (the mass ratio of the sodium fluosilicate to the calcium carbonate is 3: 1 ) carrying out heat preservation for 15-30 minutes, and casting into ingots. According to the method for reducing impurity element nickel, the content of nickel in the cast ingot is reduced by 30%-60%, so that the content of the nickel in the brass alloy product produced by the complex raw material waste copper is reasonably controlled, and the competitiveness of the product is improved.

Embodiments of this invention provide an anti-etching layer, a semiconductor processing device and its fabrication method. The semiconductor processing device comprises a processing chamber configured for the source gas introduction for corresponding to the treatment of substrates placed in the processing chamber. The processing chamber is further configured to receive the plasma and has a plurality of processing parts therein. The semiconductor processing device further comprises: an anti-etching layer covered on the surface of the processing chamber and/or processing parts exposed to the plasma. The anti-etching layer is used to resist the plasma etching and protect the processing chamber and/or processing parts. This invention uses the anti-etching layer to protect the processing chamber and processing parts to prevent them from being damaged by the plasma and increase their service lives.

The invention relates to a method for improving photoelectrode photoproduction carrier separation through compensation doping. The method includes the following steps that (1) a plurality of Mo:BiVO4 thin films are prepared on the surface of a conducting substrate, wherein Mo:BiVO4 is BiVO4 doped with Mo6+; and (2) a Co:BiVO4 thin film is prepared on the surface of each Mo:BiVO4 thin film, wherein Co:BiVO4 is BiVO4 doped with Co2+, and a preparing method of the Co:BiVO4 includes the following steps that a glacial acetic acid mixed solution of bismuth nitrate and cobalt nitrate and a diacetone solution of acetylketone vanadium are mixed to obtain a first total mixed solution, then the first total mixed solution is coated to the surface of the Mo:BiVO4 thin films, and drying and calcining are carried out to prepare a Mo:BiVO4/Co:BiVO4 photoelectrode. Perfect lattice matching of the Mo:BiVO4 and the Co:BiVO4 greatly reduces the interface defect number, and compounding of carriers is further reduced.