Method for forming semiconductor device

Abstract

A method for forming a semiconductor device comprises the following steps: providing a substrate; forming a dielectric layer on the surface of the substrate; forming a via exposing the substrate on the dielectric layer; forming a metal layer filling the via on the surface of the dielectric layer; carrying out heat treatment on the metal layer; and forming a covering layer on the surface of the metal layer after heat treatment. The invention can avoid bulge and defects on the surface of the metal layer and improve the performance of the device.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a semiconductor device. Background technique [0002] As the production of integrated circuits develops towards ultra-large-scale integrated circuits, the circuit density inside integrated circuits is increasing, and the number of components contained is also increasing. This development makes the surface of the wafer unable to provide enough area to manufacture all the components. required interconnection wires. [0003] In order to meet the requirements of interconnection lines after shrinking components, the design of two or more layers of multilayer metal interconnection lines has become a method commonly used in VLSI technology. At present, the conduction between different metal layers or the metal layer and the liner layer is to form an opening through the dielectric layer between the metal layer and the metal layer or between the metal layer...

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Problems solved by technology

[0009] With the further development of the production scale of the integrated circuit, the metal layer material of the metal layer 14 is mainly Cu, the metal layer 14 formed will have stress, and in the subsequent process, a multilayer covering layer will be formed

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