Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Chemical mechanical polishing solution for processing optical surface of Ge-As-Se chalcogenide glass

A ge-as-se, chalcogenide glass technology, applied in polishing compositions containing abrasives, etc., can solve problems such as multiple microscopic surface defects on optical surfaces, and achieve the effect of reducing the number of surface defects and facilitating preparation

Inactive Publication Date: 2020-04-21
TIANJIN JINHANG INST OF TECH PHYSICS
View PDF6 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the traditional grinding and polishing method is more commonly used, but due to the influence of processing auxiliary materials and material properties, there are many microscopic surface defects on the optical surface obtained; single-point diamond turning processing will leave turning tool marks on the surface; molding processing is suitable for Mass production of small size parts

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chemical mechanical polishing solution for processing optical surface of Ge-As-Se chalcogenide glass
  • Chemical mechanical polishing solution for processing optical surface of Ge-As-Se chalcogenide glass
  • Chemical mechanical polishing solution for processing optical surface of Ge-As-Se chalcogenide glass

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Weigh 50g of alumina polishing powder with a particle size of W0.3 and add it into 852.24ml of deionized water while stirring, and ultrasonically disperse for 5-10min;

[0040] Weigh 1g sodium hexametaphosphate and add the above solution while stirring;

[0041] Measure 0.27ml of sulfuric acid stock solution with a concentration of 98%, and add it into the above solution along the container wall until the pH value is about 2;

[0042] Measure 147.49ml of 30% hydrogen peroxide stock solution, and add it into the solution while stirring.

[0043] Implementation effect analysis:

[0044] The Φ40mm wafer-shaped Ge 10 As 40 Se 50The chalcogenide glass sample is placed on a polishing machine, the spindle speed is controlled at 37rpm, the swing speed of the pendulum shaft is 25rpm, the eccentricity is 10mm, and the polishing time is 30min. figure 1 -As shown in (b), the surface roughness is shown in the attached table 2.

Embodiment 2

[0046] Weigh 50g of alumina polishing powder with a particle size of W0.3 and add it into 704.74ml of deionized water while stirring, and ultrasonically disperse for 5-10min;

[0047] Weigh 1g sodium hexametaphosphate and add the above solution while stirring;

[0048] Measure 0.27ml of sulfuric acid stock solution with a concentration of 98%, and add it into the above solution along the container wall until the pH value is about 2;

[0049] Measure 294.99ml of 30% hydrogen peroxide stock solution, and add it into the solution while stirring.

[0050] Implementation effect analysis:

[0051] The Φ40mm wafer-shaped Ge 10 As 40 Se 50 The chalcogenide glass sample is placed on a polishing machine, the spindle speed is controlled at 37rpm, the swing speed of the pendulum shaft is 25rpm, the eccentricity is 10mm, and the polishing time is 30min. figure 1 -As shown in (c), the surface roughness is shown in the attached table 2.

Embodiment 3

[0053] Weigh 50g of alumina polishing powder with a particle size of W0.3, add it into 557.25ml of deionized water while stirring, and ultrasonically disperse for 5-10min;

[0054] Weigh 1g sodium hexametaphosphate and add the above solution while stirring;

[0055] Measure 0.27ml of sulfuric acid stock solution with a concentration of 98%, and add it into the above solution along the container wall until the pH value is about 2;

[0056] Measure 442.48ml of 30% hydrogen peroxide stock solution, and add it into the solution while stirring.

[0057] Implementation effect analysis:

[0058] The Φ40mm wafer-shaped Ge 10 As 40 Se 50 The chalcogenide glass sample is placed on a polishing machine, the spindle speed is controlled at 37rpm, the swing speed of the pendulum shaft is 25rpm, the eccentricity is 10mm, and the polishing time is 30min. figure 1 -As shown in (d), the surface roughness is shown in the attached table 2.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a chemical mechanical polishing solution for processing an optical surface of Ge-As-Se chalcogenide glass. The chemical mechanical polishing solution comprises polishing powder, a chemical corrosion reagent, a pH reagent, a dispersing agent and deionized water, the polishing powder is selected from aluminum oxide, diamond powder and cerium oxide, the chemical corrosion reagent is an alkaline reagent or an oxidizing agent, the alkaline reagent is sodium hydroxide, sodium carbonate, sodium bicarbonate, cyclohexylamine, triethylamine or ethylenediamine, the oxidizing agentis one of hydrogen peroxide, potassium permanganate, ferric chloride and potassium ferrate, the pH reagent is used for ensuring the stable acid-base property of the polishing solution, the acid is selected from sulfuric acid, hydrochloric acid, oxalic acid, acetic acid and citric acid, the alkali is selected from sodium hydroxide, sodium carbonate, sodium bicarbonate, cyclohexylamine, triethylamine and ethylenediamine, and polyphosphate is selected as the dispersing agent and used for improving the dispersity of the polishing powder in turbid liquid. For chalcogenide glass with different components, only the concentration of the chemical corrosion reagent needs to be adjusted in a targeted mode, and universality is achieved.

Description

technical field [0001] The invention belongs to the technical field of precision surface processing of infrared optical materials, and relates to a chemical mechanical polishing liquid used for processing the optical surface of Ge-As-Se chalcogenide glass. Background technique [0002] Infrared optical components are mostly crystalline materials such as silicon, germanium, zinc sulfide, and zinc selenide. Based on their thermal expansion properties and refractive index variation characteristics with temperature, athermalization treatment is extremely necessary. As a commonly used infrared optical material, chalcogenide glass has optical and thermodynamic properties such as small thermo-optic coefficient (dn / dT) and large thermal expansion coefficient. It can achieve athermalization matching with other materials and contribute to the thermal difference of infrared optical system and chromatic aberration correction. It is widely used in infrared imaging fields such as infrare...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 薛栋柏王朋矫灵艳李伟皓杨津
Owner TIANJIN JINHANG INST OF TECH PHYSICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com