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The invention relates to a fabricating method of a semiconductor device. The method comprises the following steps: a semiconductor substrate comprising a core device region and input / output device region is provided, and gate dielectric layers and gatespositioned on the gate dielectric layers are formed on the semiconductor substrates of both the core device region and the input / output device region; the gates are taken as masks, and the first ion implantation is performed in the semiconductor substrates of both the core device region and the input / output device region; rapid thermal annealing is performed, low-doped source drain regions are formed in the semiconductor substrates at the both sides of the gate dielectric layers of both the core device region and the input / output device region; wall clearance are formed on both the gate dielectric layers of the core device region and the input / output device region and on the side walls of the gates; the gates and the spacers are taken as masks, and the third ion implantation is performed in the semiconductor substrates of the core device region and the input / output device region to form a heavily doped source drain region. The method can adjust the saturation current of the device, and improve the reliability of the input / output device.