Beta-Ga2O3 based solar-blinded ultraviolet photoelectric detector array and preparation method thereof

Abstract

The invention discloses a Beta-Ga2O3 based solar-blinded ultraviolet photoelectric detector array and a preparation method thereof, and relates to the photoelectron technical field; the detector array comprises the following structures from bottom to top: a Beta-Ga2O3 luminous absorption layer, a lower electrode layer, an oxide film insulating layer and an upper electrode layer; the Beta-Ga2O3 luminous absorption layer is formed by growing a Beta-Ga2O3 film on a substrate; the lower electrode layer comprising column wires and interdigital electrodes is formed on the Beta-Ga2O3 luminous absorption layer; the oxide film insulating layer is arranged on the lower electrode layer; the most top layer is the upper electrode layer comprising line wires; the oxide film insulating layer is arranged in middle of the intersection portion of the line wires and column wires; the anode of each column of the interdigital electrode is connected on the column wire of the same column; the line wire is connected with the cathode of each line interdigital electrode; the prepared detector array is packaged by a ceramic packaging unit, thus obtaining the Beta-Ga2O3 based solar-blinded ultraviolet photoelectric detector array. The Beta-Ga2O3 based solar-blinded ultraviolet photoelectric detector array is strong in process controllability, low in cost, simple in operation steps, good in repeatability, short in development period, and can be massively produced.

Description

technical field [0001] The invention relates to the field of optoelectronic technology, in particular to a β-Ga 2 o 3 A sun-blind ultraviolet photodetector array and a method of making the same. Background technique [0002] Due to the absorption of the ozone layer, there is almost no deep ultraviolet light with a wavelength between 200-280nm on the surface of the earth. The light in this band is called solar-blind ultraviolet light, and the signal detection for this band is called solar-blind ultraviolet detection. Since it is not affected by the sunlight background, the detection sensitivity of solar-blind ultraviolet light signals is extremely high, and the communication accuracy rate of working in this band is also extremely high. Solar-blind ultraviolet photodetectors can be widely used in scientific research, military, space, environmental protection and other fields, such as ultraviolet light monitors in spaceships, solar ultraviolet monitoring of the ozone layer, t...

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Problems solved by technology

[0005] However, solar-blind ultraviolet detectors made of semiconductor alloys (such as AlGaN, ZnMgO), and high-quality epitaxial film growth temperatures are not easy to achieve, and the mismatch of band gaps makes the detector unable to detect the entire deep ultraviolet region; diamond-made For solar-blind UV detectors, due to the fixed band gap, the sensitivity range of the detector is limited to a narrow radiation region of 225nm

[0006] Gallium oxide (Ga 2 o 3 ) As an important direct wide bandgap oxide semiconductor nanomaterial, its bandgap at room temperature is about 4.2-4.9eV. Since its bandgap corresponds to a wavelength of 253-258nm, it is located in the solar blind zone and is sensitive to visible light and infrared radiation. It has no absorption and no photoresponse, and is an ideal material for building solar-blind ultraviolet photodetector devices; but no one has yet used gallium oxide materials to make detector arrays

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