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Gallium oxide-based solar-blind ultraviolet photoelectric detector

An electrical detector, gallium oxide technology, applied in the field of photoelectric detection, can solve the problems of optimization and improvement of optoelectronic performance, low light-dark current ratio, high dark current ratio, low power consumption, high light-dark current ratio, The effect of low dark current

Pending Publication Date: 2022-04-15
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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Problems solved by technology

Among photodetectors based on gallium oxide materials, metal-semiconductor-metal (MSM) photodetectors have a simple structure and low cost, and have received extensive attention and research. However, they still have a high dark current. , The problem of low photo-dark current ratio seriously restricts the optimization and improvement of its photoelectric performance

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  • Gallium oxide-based solar-blind ultraviolet photoelectric detector
  • Gallium oxide-based solar-blind ultraviolet photoelectric detector

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Embodiment Construction

[0020] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the implementation manners in the present invention, all other implementation manners obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of the present invention.

[0021] In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be interpreted as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. Thus, the features defined as "first" and "second" may explicitly or implicitly include at least one of these features.

[0022] Unless otherwise defined, all technical and scientific terms use...

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Abstract

The gallium oxide-based solar blind ultraviolet photoelectric detector comprises a first electrode layer, a ferroelectric layer, a gallium oxide layer and a second electrode layer which are sequentially stacked, and the first electrode layer and the ferroelectric layer are in ohmic contact. In the invention, a local field formed by spontaneous polarization of the ferroelectric layer can be used for depleting internal defects of the gallium oxide layer and regulating and controlling an energy band structure of the gallium oxide layer and the width of an interface depletion region, and a photo-generated electron hole pair existing in the gallium oxide layer can be accelerated under the action of the depletion region and an external electric field; therefore, the concentration and the separation efficiency of photon-generated carriers of the gallium oxide-based solar-blind ultraviolet photoelectric detector are improved, and meanwhile, the distribution of internal and interface defects of the gallium oxide layer can be regulated and controlled through residual polarization of the ferroelectric layer. Therefore, the gallium oxide-based solar-blind ultraviolet photoelectric detector is low in dark current and high in light-dark current ratio, so that the gallium oxide-based solar-blind ultraviolet photoelectric detector has the characteristics of low power consumption, high reliability, high sensitivity and the like.

Description

technical field [0001] The invention relates to the technical field of photoelectric detection, in particular to a gallium oxide-based sun-blind ultraviolet photodetector. Background technique [0002] The sun-blind ultraviolet photodetector uses the characteristic ultraviolet working band (200nm-280nm) corresponding to the sun-blind area, which can effectively avoid the influence of space solar background radiation, and has the characteristics of high sensitivity, strong confidentiality, low background interference, and low false alarm rate. Wide range of applications. [0003] Gallium oxide (Ga 2 o 3 ) is an emerging ultra-wide bandgap semiconductor material (~4.9eV), which has five different crystal structures of α, β, γ, δ, ε, among which β-Ga which belongs to the monoclinic phase 2 o 3 The most stable is the key frontier direction of research and development of a new generation of solar-blind ultraviolet photodetectors in the world. Among photodetectors based on ga...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/108H01L31/0224H01L31/032
Inventor 刘宁涛张文瑞叶继春
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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