Gallium oxide-based solar-blind ultraviolet photoelectric detector

Abstract

The gallium oxide-based solar blind ultraviolet photoelectric detector comprises a first electrode layer, a ferroelectric layer, a gallium oxide layer and a second electrode layer which are sequentially stacked, and the first electrode layer and the ferroelectric layer are in ohmic contact. In the invention, a local field formed by spontaneous polarization of the ferroelectric layer can be used for depleting internal defects of the gallium oxide layer and regulating and controlling an energy band structure of the gallium oxide layer and the width of an interface depletion region, and a photo-generated electron hole pair existing in the gallium oxide layer can be accelerated under the action of the depletion region and an external electric field; therefore, the concentration and the separation efficiency of photon-generated carriers of the gallium oxide-based solar-blind ultraviolet photoelectric detector are improved, and meanwhile, the distribution of internal and interface defects of the gallium oxide layer can be regulated and controlled through residual polarization of the ferroelectric layer. Therefore, the gallium oxide-based solar-blind ultraviolet photoelectric detector is low in dark current and high in light-dark current ratio, so that the gallium oxide-based solar-blind ultraviolet photoelectric detector has the characteristics of low power consumption, high reliability, high sensitivity and the like.

Description

technical field [0001] The invention relates to the technical field of photoelectric detection, in particular to a gallium oxide-based sun-blind ultraviolet photodetector. Background technique [0002] The sun-blind ultraviolet photodetector uses the characteristic ultraviolet working band (200nm-280nm) corresponding to the sun-blind area, which can effectively avoid the influence of space solar background radiation, and has the characteristics of high sensitivity, strong confidentiality, low background interference, and low false alarm rate. Wide range of applications. [0003] Gallium oxide (Ga 2 o 3 ) is an emerging ultra-wide bandgap semiconductor material (~4.9eV), which has five different crystal structures of α, β, γ, δ, ε, among which β-Ga which belongs to the monoclinic phase 2 o 3 The most stable is the key frontier direction of research and development of a new generation of solar-blind ultraviolet photodetectors in the world. Among photodetectors based on ga...

AI Technical Summary

Problems solved by technology

Among photodetectors based on gallium oxide materials, metal-semiconductor-metal (MSM) photodetectors have a simple structure and low cost, and have received extensive attention and research. However, they still have a high dark current. , The problem of low photo-dark current ratio seriously restricts the optimization and improvement of its photoelectric performance

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