a β-ga 2 o 3 Sun-blind ultraviolet photodetector array and its preparation method
An electrical detector, -ga2o3 technology, applied in the field of optoelectronics, can solve the problems that the detector cannot detect the deep ultraviolet region, and the epitaxial thin film growth temperature is difficult to achieve, etc., and achieves broad commercial application prospects, low power consumption, and high quantum efficiency. Effect
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[0046] The specific implementation method of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0047] The present invention provides a β-Ga 2 o 3 The solar-blind ultraviolet photodetector array and its preparation method can make the research on the electrical and photoelectric properties of the detector not limited to a single device, which is beneficial to integration.
[0048] The detector arrays are layered from bottom to top as follows: β-Ga 2 o 3 Light absorbing layer, lower electrode layer, oxide film insulating layer and upper electrode layer; such as figure 1 As shown, a 4×4 detector array is selected in this embodiment.
[0049] Using standard semiconductor photolithography process, choose β-Ga as the light absorbing layer 2 o 3 Preparation of β-Ga on a single crystal substrate or on a sapphire substrate by magnetron sputtering, molecular beam epitaxy, pulsed laser deposition or sol-gel 2 o 3 Epitaxial fi...
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