Manufacture method of semiconductor device

Abstract

The invention relates to a fabricating method of a semiconductor device. The method comprises the following steps: a semiconductor substrate comprising a core device region and input / output device region is provided, and gate dielectric layers and gatespositioned on the gate dielectric layers are formed on the semiconductor substrates of both the core device region and the input / output device region; the gates are taken as masks, and the first ion implantation is performed in the semiconductor substrates of both the core device region and the input / output device region; rapid thermal annealing is performed, low-doped source drain regions are formed in the semiconductor substrates at the both sides of the gate dielectric layers of both the core device region and the input / output device region; wall clearance are formed on both the gate dielectric layers of the core device region and the input / output device region and on the side walls of the gates; the gates and the spacers are taken as masks, and the third ion implantation is performed in the semiconductor substrates of the core device region and the input / output device region to form a heavily doped source drain region. The method can adjust the saturation current of the device, and improve the reliability of the input / output device.

Description

Technical field [0001] The present invention relates to the field of semiconductor technology, in particular to a manufacturing method of a semiconductor device. Background technique [0002] With the rapid development of semiconductor manufacturing technology, in order to achieve faster computing speed, greater data storage capacity and more functions, semiconductor chips are developing towards higher device density and high integration. Most of the peripheral circuits of semiconductor chips require high-voltage input / output devices, while core devices such as various memory devices need to operate at low voltages. In order to maximize the performance of the devices, the channel length of the core devices is shortened, resulting in short Channel region and short channel effect. In order to avoid the short channel effect, a lightly doped source / drain (LDD) structure is usually adopted. [0003] As the channel length of the core device shrinks, in order to obtain the required driv...

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Problems solved by technology

[0010] The problem solved by the present invention is that the manufacturing method of the semiconductor device in the prior art cannot suppress the short channel effect and the life of the input / output device is degraded, resulting in a defect in the reliability of the device. Improve the reliability of input / output devices while suppressing the substrate leakage current that may be caused by impact ionization

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