404results about How to "Increase the dislocation density" patented technology

The present invention relates to a Cu-Ni-Sn-P-based copper alloy sheet having a specific composition, where (1) the copper alloy sheet is set to have an electrical conductivity of 32% IACS or more, a stress relaxation ratio in the direction parallel to the rolling direction of 15% or less, a 0.2%-proof stress of 500 MPa or more and an elongation of 10% or more; (2) the X-ray diffraction intensity ratio I(200) / I(220) in the sheet surface is set to be a given value or less and at the same time, anisotropy in the stress relaxation resistance characteristic is reduced by fining the grain size; (3) the texture of the copper alloy sheet is set to a texture such that the distribution density ofB orientation and the sum of distribution densities ofB orientation, S orientation and Cu orientation each is set to fall in a specific range and bendability is thereby enhanced; or (4) the dislocation density measured using the value obtained by dividing the half-value breadth of the X-ray diffraction intensity peak from {200} plane in the copper alloy sheet surface by the peak height is set to a given value or more and press punchability is thereby enhanced. The Cu-Ni-Sn-P-based copper alloy sheet of the present invention is excellent in the properties required for a terminal or connector and further (1) has excellent strength-ductility balance, (2) satisfies the stress relaxation resistance characteristic in the direction orthogonal to the rolling direction, (3) has excellent bendability, or (4) has excellent press punchability.

A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.

A group III-V nitride-based semiconductor substrate includes a group III-V nitride-based semiconductor crystal. A surface area of the substrate is greater than or equal to 45 cm2. A thickness of the substrate is greater than or equal to 200 μm. An in-plane dislocation density of the substrate is less than or equal to 2×107 cm−2 in average. The in-plane dislocation density of the substrate is less than or equal to 150% of the average at maximum.