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Method for preparing light emitting diode

A preparation process and photolithography technology, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems that homogeneous epitaxial substrates have not been commercialized on a large scale, the preparation of GaN thick film materials is difficult, and the price of GaN substrates is expensive. , to achieve the effect of low price, high reliability and improved crystal quality

Inactive Publication Date: 2011-11-16
北京燕园中镓半导体工程研发中心有限公司
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  • Application Information

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Problems solved by technology

[0006] The above two methods, the lateral epitaxy process is complicated, and can only achieve the effect of locally reducing the dislocation density; due to the difficulty in the preparation of large-area GaN thick film materials, GaN substrates are expensive, and homogeneous epitaxial substrates have not yet been developed. Achieve large-scale commercialization

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  • Method for preparing light emitting diode
  • Method for preparing light emitting diode
  • Method for preparing light emitting diode

Examples

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Embodiment 1

[0034] Example 1: For the preparation of the c-surface LED, refer to figure 2 :

[0035] 1. The substrate can be sapphire, silicon carbide, Si and other substrates. Arrange carbon nanotubes in parallel on the substrate, the arrangement is parallel arrangement along the growth plane, the arrangement can be isoperiodic, or a periodic disordered structure, the carbon nanotubes can be a single carbon nanotube or a group of carbon nanotubes Clusters of carbon nanotubes, in various forms such as single-layer or multi-layer. The present embodiment selects the sapphire substrate of c plane, selects the single-layer carbon nanotubes arranged vertically along the reference side of the substrate at equal periods; the diameter of the carbon nanotubes is 1-100 nanometers, and this embodiment adopts 5 nanometers; the period is 1 -100 microns, preferably 1-10 microns, 2 microns are used in this embodiment.

[0036] 2. The InN material is grown by MBE growth technology to form a transition ...

Embodiment 2

[0042] Example 2: Preparation of c-plane vertical structure LED:

[0043] 1. The substrate can be sapphire, silicon carbide, Si and other substrates. Arrange carbon nanotubes in parallel on the substrate, the arrangement is parallel arrangement along the growth plane, the arrangement can be isoperiodic, or a periodic disordered structure, the carbon nanotubes can be a single carbon nanotube or a group of carbon nanotubes Clusters of carbon nanotubes, in various forms such as single-layer or multi-layer. The present embodiment selects the sapphire substrate of c plane, selects the single-layer carbon nanotubes arranged vertically along the reference side of the substrate at equal periods; the diameter of the carbon nanotubes is 1-100 nanometers, and this embodiment adopts 5 nanometers; the period is 1 -100 microns, preferably 1-10 microns, 2 microns are used in this embodiment;

[0044] An InGaN material with a high In composition is grown by MBE growth technology to form a t...

Embodiment 3

[0051] Example 3: Preparation of a c-plane LED on a thick-film GaN template:

[0052] 1. The substrate can be sapphire, silicon carbide, Si and other substrates. Arrange carbon nanotubes in parallel on the substrate, the arrangement is parallel arrangement along the growth plane, the arrangement can be isoperiodic, or a periodic disordered structure, the carbon nanotubes can be a single carbon nanotube or a group of carbon nanotubes Clusters of carbon nanotubes, in various forms such as single-layer or multi-layer. The present embodiment selects the sapphire substrate of c plane, selects the single-layer carbon nanotubes arranged vertically along the reference side of the substrate at equal periods; the diameter of the carbon nanotubes is 1-100 nanometers, and this embodiment adopts 5 nanometers; the period is 1 -100 microns, preferably 1-10 microns, 2 microns are used in this embodiment.

[0053] 2. The InN material is grown by MBE growth technology to form a transition lay...

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Abstract

The invention provides a method for preparing an LED (light emitting diode) and belongs to the field of preparation of a photoelectronic device. The method comprises the following steps of: forming a transition layer consisting of a carbon nano tube and InN or a high In component InGaN epitaxial layer material on a substrate; growing an LED epitaxial wafer on the transition layer; carrying out photoetching, etching, electrode deposition and packaging process on the LED epitaxial wafer to prepare the LED with a positively assembled structure; or transferring the substrate, carrying out laser stripping and separation on the substrate and then carrying out photoetching, etching, electrode deposition and packaging process to prepare the LED with a vertical structure. According to the method, the crystal quality can be improved, but also the stress regulation and control can be realized.

Description

technical field [0001] The invention relates to a preparation technology of a light-emitting diode, which belongs to the field of preparation of optoelectronic devices. Background technique [0002] At present, commercial LEDs mainly use sapphire or silicon carbide substrates. Due to the large lattice mismatch and thermal expansion coefficient mismatch between the substrate and GaN materials, the luminous efficiency of light-emitting diodes decreases. It is of great significance to reduce the dislocation density and control the stress of the epitaxial wafer by means of growth for the preparation of high-performance LEDs. [0003] At present, there are mainly the following methods to reduce the dislocation density and adjust the stress distribution to prepare high-power and high-brightness light-emitting diodes: [0004] (1) Reduce the dislocation density by lateral epitaxy: use silicon dioxide, silicon nitride and other masks to perform selective growth, and achieve the eff...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00
Inventor 于彤军龙浩贾传宇杨志坚张国义
Owner 北京燕园中镓半导体工程研发中心有限公司
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