164results about How to "Impurities increase" patented technology

A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.

A polycrystalline chemical vapour deposited (CVD) diamond wafer comprising: a largest linear dimension equal to or greater than 70 mm; a thickness equal to or greater than 1.3 mm; and one or both of the following characteristics measured at room temperature (nominally 298 K) over at least a central area of the polycrystalline CVD diamond wafer, said central area being circular, centred on a central point of the polycrystalline CVD diamond wafer, and having a diameter of at least 70% of the largest linear dimension of the polycrystalline CVD diamond wafer: an absorption coefficient ≦0.2 cm−1 at 10.6 μm; and a dielectric loss coefficient at 145 GHz, of tan δ≦2×10−4.

Pressure swing adsorption separation of a feed gas mixture, to obtain a purified product gas of the less strongly adsorbed fraction of the feed gas mixture, is performed with a cooperating set of "N" adsorbers in a rotary assembly, with each adsorber communicating at its product end directly to a rotary cyclic displacement chamber, and at its feed end by rotary distributor valve ports to a rotary piston feed compressor and a rotary piston exhaust vacuum pump. The compressor and vacuum pump are integrated with the cycle, and rotate at "N" times the cycle frequency. Alternative adsorber configurations for high frequency operation are disclosed.

This invention relates to processes for purifying sucralose by the use of an initial non-crystallization purification procedure followed by three or more sequential crystallization steps and recycle of the mother liquor remaining from each crystallization step to the feed of another crystallization or purification step. This invention also relates to sucralose compositions as well as compositions comprising the sucralose compositions of the present invention. These compositions may be highly pure and have a superior taste profile.

A process for producing a purified carboxylic acid having “n+1” carbon atoms comprises feeding a carboxylic acid stream containing a carboxylic acid having “n+1” carbon atoms, a hydrogen halide, a lower boiling point (bp) component, a higher bp component, and others to a first distillation column; separating a lower bp fraction containing part of the lower bp component and a higher bp fraction containing part of the higher bp component in the first column; withdrawing a side stream containing at least the carboxylic acid by side cut from the first column; feeding the side stream to a second distillation column; separating a lower bp fraction containing part of the lower bp component and a higher bp fraction containing part of the higher bp component in the second column; and withdrawing a side stream containing the carboxylic acid by side cut from the second column to recover a purified carboxylic acid; and the process further comprises feeding at least one first component (A) selected from the group consisting of an alcohol, corresponding to the carboxylic acid, having “n” carbon atom(s), and an ester of the alcohol with the carboxylic acid to the first column, and if necessary water. Such a process ensures reduction of the concentration of the hydrogen halide in the purified carboxylic acid.

Silicon nitride film is formed on a silicon wafer mounted in a boat in an LPCVD tool by feeding a silicon source (SiH2Cl2, SiCl4, Si2Cl6, etc.) from an injector and feeding a mixed gas of monomethylamine (CH3NH2) and ammonia (NH3) as the nitrogen source from an injector. This addition of monomethylamine to the source substances for film production makes it possible to provide an improved film quality and improved leakage characteristics even at low temperatures (450-600° C.).

To provide, in FINFET whose threshold voltage is determined essentially by the work function of a gate electrode, a technology capable of adjusting the threshold voltage of FINFET without changing the material of the gate electrode. FINFET is formed over an SOI substrate comprised of a substrate layer, a buried insulating layer formed over the substrate layer, and a silicon layer formed over the buried insulating layer. The substrate layer has therein a first semiconductor region contiguous to the buried insulating layer. The silicon layer of the SOI substrate is processed into a fin. A ratio of the height of the fin to the width of the fin is adjusted to fall within a range of from 1 or greater but not greater than 2. In addition, a voltage can be applied to the first semiconductor region.

Systems and methods of purifying a silicon-containing material include the step of directing the silicon-containing material in a liquid state through an adsorption unit including an adsorbent material to facilitate adsorption of at least one component from the silicon-containing material. Alternatively, the silicon-containing material is directed, in liquid state and / or gaseous state, through two or more purification units, including an adsorption unit, a vaporization unit, a filter unit and a condenser. The silicon-containing material can be a low-k silicon-containing material such as trimethylsilane, tetramethylsilane, dimethyldimethoxysilane, tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, dimethylphenyl silane, and dimethyldivinyl silane.

A cooling system for a fuel cell is provided with a cooling apparatus that regulates the temperature of the fuel cell by supplying the fuel cell with a cooling liquid via a cooling liquid passage by means of a water pump; an impurity-removing device which is provided in the cooling liquid passage and which removes impurities from within the cooling liquid; and flow generating means for causing the cooling liquid in the cooling liquid passage to flow through the impurity-removing device when the fuel cell is not operating.

A method of making a group III-V nitride-based semiconductor substrate has the steps of: providing a first crystal substrate; placing the first crystal substrate on a susceptor; holding down the first crystal substrate on the susceptor; and growing a first group III-V nitride-based semiconductor crystal on the first crystal substrate.

A phthalocyanine compound possessing an excellent ability to absorb near infrared ray, exhibiting excellent compatibility with resin, and excelling in such special qualities as heat resistance, light resistance, and resistance to weather conditions is provided. This phthalocyanine compound is represented by the following general formula (1) wherein Z2, Z3, Z6, Z7, Z10, Z11, Z14, and Z15 are independently SR1, OR2, or a fluorine atom, and at least one of them is for SR1 or OR2, Z1, Z4, Z5, Z8, Z9, Z12, Z13, and Z16 independently stand for NHR3, SR1, OR2, or a fluorine atom and at least one of them is NHR3, at least one of Z1 to Z16 is a fluorine atom or OR2, R1, R2, and R3 are independently a substituted or non-substituted phenyl group, a substituted or non-substituted aralkyl group, or a substituted or non-substituted alkyl group of 1 to 20 carbon atoms, and M is for a nonmetal, a metal, a metal oxide, or a metal halide.

A display element includes: a pair of substrates, at least one of which is transparent; a medium, between the substrates, the medium being changeable in an optical anisotropy magnitude by and according to electric field application; and a region in which a pixel electrode and a counter electrode overlap with each other with an insulating layer therebetween.

The invention relates to a catalyst component for olefin (co)polymerization, to preparation thereof, to a catalyst comprising the same, and to use thereof in olefin (co)polymerization. The catalyst component of the invention comprises magnesium, titanium, halogen, inner electron donor compound, and alkoxy group derived from a surface modifier, wherein the content of the alkoxy group derived from the surface modifier is in a range of from 0.01 to 3 percent by weight, based on the weight of the catalyst component.

A silicon carbide substrate has a first main surface, and a second main surface opposite to the first main surface. A region including at least one main surface of the first and second main surfaces is made of single-crystal silicon carbide. In the one main surface, sulfur atoms are present at not less than 60×1010 atoms / cm2 and not more than 2000×1010 atoms / cm2, and carbon atoms as an impurity are present at not less than 3 at % and not more than 25 at %. Thereby, a silicon carbide substrate having a stable surface, a semiconductor device using the substrate, and methods for manufacturing them can be provided.

The invention discloses a synthetic method of cyclosulphate. A peroxysulfate solution is pre-synthesized through sulfuric acid and hydrogen peroxide, then under existence of an organic solvent, a metal inorganic compound and a catalyst, the peroxysulfate solution is dropwise added to generate a catalytic oxidation reaction with cyclosulfite, after the reaction is completed, salt residue is filtered out, still standing for layering is conducted, an organic layer is taken to be distilled, concentrated and purified, and a cyclosulphate high-quality product is obtained. According to the syntheticmethod of the cyclosulphate, the cheap sulfuric acid and hydrogen peroxide are used as the raw materials, the peroxysulfate solution is prepared to conduct catalytic oxidation on the cyclosulfite, onthe one hand, the reaction is mild, control is easy, and the reaction conversion rate is high; on the other hand, the evaporation capacity of water is small, energy consumption is low, generated wastewater is less, and a synthetic process is more environmentally friendly; and the prepared cyclosulphate is few in impurity, high in purity and wide in market prospect.

A second Group III nitride compound semiconductor layer not doped with any impurities or doped with n-type impurities or with n-type and p-type impurities is formed on a first Group III nitride compound semiconductor layer doped with p-type impurities. Resistance is reduced by a heat treatment after or during the formation of the second Group III nitride compound semiconductor layer.

A cleaning composition for semiconductor components comprises a water-soluble polymer (a) having a specific molecular weight and a compound (b) represented by the following formula (1): NR4OH  (1) wherein each R is independently a hydrogen atom or an alkyl group of 1 to 6 carbon atoms. A process for manufacturing a semiconductor device comprises chemical mechanical polishing a semiconductor component, and cleaning the semiconductor component with the cleaning composition for semiconductor components. The cleaning composition exerts a high cleaning effect on impurities remaining on a polished surface of a semiconductor component after chemical mechanical polishing, and becomes little burden on the environment.

In accordance with an embodiment of the present invention, a thyristor-based semiconductor memory device may comprise an array of thyristor-based memory formed in an SOI wafer. A supporting substrate may be formed with a density of dopants sufficient to assist delivery of a bias level to the backside of an insulating layer beneath a thyristor. Such conductivity within the substrate may allow reliable back-gate control for the gain of a component bipolar device of the thyristor.

The present invention relates to a method for causing sodium sulfide or a mixture of sodium sulfide and sulfur to react with diazonium salt formed by diazotizing anthranilic acid, wherein the Na / S atomic ratio as calculated on the basis of the employed sodium sulfide and sulfur is adjusted to within the range of 1.33 to 2.0 during the reaction. Thus is made practicable the manufacture of thiosalicylic acid in a high yield without going through the individual route of isolating and reducing dithiosalicylic acid.

The invention relates to a communication system and devices forming part of this system, wherein light is used for the transmission signal. The communication system includes an apparatus for forwarding operating room device signals to a device which apparatus is configured to receive an analog signal comprising the operating room device signal and to produce a digital signal based upon the analog signal, the apparatus further being configured to produce a signal based upon the digital signal, wherein the signal is for modulating the output of a light source. This invention includes a device for managing access and priority of traffic within this system according to a specific hierarchy of priority starting with safety and ending with administrative information.

In a steam valve, a strainer is arranged between a valve body and a valve casing in which the valve body is accommodated, and a screen assembly is mounted on an outer peripheral portion of the strainer. The screen assembly includes a temporary screen unit and a permanent screen unit which is arranged inside the temporary screen unit. Each of the screen units is a substantially cylindrical structure made of a plate formed with perforations.

A method for manufacturing a solar cell from a semiconductor substrate (1) of a first conductivity type, the semiconductor substrate having a front surface (2) and a back surface (3). The method includes in a sequence: texturing (102) the front surface to create a textured front surface (2a); creating (103) by diffusion of a dopant of the first conductivity type a first conductivity-type doped layer (2c) in the textured front surface and a back surface field layer (4) of the first conductivity type in the back surface; removing (105; 104a) the first conductivity-type doped layer from the textured front surface by an etching process adapted for retaining texture of the textured front surface; creating (106) a layer of a second conductivity type (6) on the textured front surface by diffusion of a dopant of the second conductivity type into the textured front surface.

A protection film for protecting a dielectric layer of an AC type PDP is formed such that impurity metal ion densities of the protection film of the PDP, which is aged, become 400 ppm or less, respectively, and the protection film contains three or more hydrogen atoms assuming that the total number of atoms of the protection film is 100.

A method for epitaxial growth of silicon carbide using chemical vapor deposition (CVD) is provided. This method utilizes halogenated carbon precursors and control of the gas-phase interaction of halogen-containing intermediate chemical products involving silicon and carbon, which ensures quality and homogeneity across the silicon carbide crystals. It also ensures a possibility to achieve device-quality epitaxial layers at lower growth temperatures as well as on on-axis or low off-angle substrate surfaces. The growth method can be applied to forming SiC device regions of desirable shape and dimensions by restricting the growth into windows formed in non-silicon carbide region on the top of SiC substrate. Application of the methods described herein will greatly benefit the production of high quality silicon carbide materials and devices.

A system for monitoring and controlling the deposition of thin films employed in semiconductor fabrication is provided. The system includes one or more acoustic and / or ultrasonic wave sources, each source directing waves onto one or more thin films deposited on a wafer. Waves reflected from the thin film is collected by a monitoring system, which processes the collected waves. Waves passing through the thin film may similarly be collected by the monitoring system, which processes the collected waves. The collected waves are indicative of the presence of impurities and / or defects in the deposited thin film. The monitoring system analyzes and provides the collected wave data to a processor, which determines whether adjustments to thin film deposition parameters are needed. The system also includes a plurality of thin film deposition devices associated with depositing thin films on the wafer. The processor selectively controls thin film deposition parameters and devices to facilitate regulating deposition.

A plasma display panel in which a first substrate having a protective layer formed thereon opposes a second substrate across a discharge space, with the substrates being sealed around a perimeter thereof. At a surface of the protective layer, first and second materials of different electron emission properties are exposed to the discharge space, with at least one of the materials existing in a dispersed state. The first and second materials may be first and second crystals, and the second crystal may be dispersed throughout the first crystal.

In a reverse conducting semiconductor device, which forms a composition circuit, a positive voltage that is higher than a positive voltage of a collector electrode may be applied to an emitter electrode. In this case, in a region of the reverse conducting semiconductor device in which a return diode is formed, a body contact region functions as an anode, a drift contact region functions as a cathode, and current flows from the anode to the cathode. When a voltage having a lower electric potential than the collector electrode is applied to the trench gate electrode at that time, p-type carriers are generated within the cathode and a quantity of carriers increases within the return diode. As a result, a forward voltage drop of the return diode lowers, and constant loss of electric power can be reduced. Electric power loss can be reduced in a power supply device that uses such a composition circuit in which a switching element and the return diode are connected in reverse parallel.

A method of regenerating adsorbent material includes providing a spent adsorbent material and contacting the adsorbent material with a solvent composition to facilitate removing oil and impurities from the spent solvent material.

The invention discloses a production process for a directly-spun terylene industrial filament of a liquid-phase tackifying fusant, belonging to the technical field of spinning. The production process includes the following steps: esterification, polycondensation, liquid-phase tackification and spinning. The production process is characterized in that: in a vertical reaction kettle, liquid-phase tackfication is carried out on the fusant obtained through esterification and polycondensation of glycol and phthalic acid; the vertical reaction kettle adopts a tower type film forming structure; the fusant enters the vertical reaction kettle from the top part for distribution, and the film forming is naturally finished under the action of gravity; a backflow pipeline is provided for the discharging of the reaction kettle, the viscosity and flow rate of the fusant are controlled by the backflow adjusting, the intrinsic viscosity of the polyester fusant after being tackified in a liquid-phase manner is within 0.85 to 1.0dl / g, and the fusant is conveyed to a spinning box body by a gear pump for spinning. By reasonably designing the reaction kettle and allocating the process, the invention effectively solves the consistency between the fusant reacting condition and the staying time; meanwhile, the consumption of a public medium is reduced, and the cost is lowered; by optimizing the process, the invention increases the production efficiency of a system and improves the product quality.