163results about How to "Impurities increase" patented technology

A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.

A polycrystalline chemical vapour deposited (CVD) diamond wafer comprising: a largest linear dimension equal to or greater than 70 mm; a thickness equal to or greater than 1.3 mm; and one or both of the following characteristics measured at room temperature (nominally 298 K) over at least a central area of the polycrystalline CVD diamond wafer, said central area being circular, centred on a central point of the polycrystalline CVD diamond wafer, and having a diameter of at least 70% of the largest linear dimension of the polycrystalline CVD diamond wafer: an absorption coefficient ≦0.2 cm⁻¹ at 10.6 μm; and a dielectric loss coefficient at 145 GHz, of tan δ≦2×10⁻⁴.

Pressure swing adsorption separation of a feed gas mixture, to obtain a purified product gas of the less strongly adsorbed fraction of the feed gas mixture, is performed with a cooperating set of "N" adsorbers in a rotary assembly, with each adsorber communicating at its product end directly to a rotary cyclic displacement chamber, and at its feed end by rotary distributor valve ports to a rotary piston feed compressor and a rotary piston exhaust vacuum pump. The compressor and vacuum pump are integrated with the cycle, and rotate at "N" times the cycle frequency. Alternative adsorber configurations for high frequency operation are disclosed.

Systems and methods of purifying a silicon-containing material include the step of directing the silicon-containing material in a liquid state through an adsorption unit including an adsorbent material to facilitate adsorption of at least one component from the silicon-containing material. Alternatively, the silicon-containing material is directed, in liquid state and/or gaseous state, through two or more purification units, including an adsorption unit, a vaporization unit, a filter unit and a condenser. The silicon-containing material can be a low-k silicon-containing material such as trimethylsilane, tetramethylsilane, dimethyldimethoxysilane, tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, dimethylphenyl silane, and dimethyldivinyl silane.

A cooling system for a fuel cell is provided with a cooling apparatus that regulates the temperature of the fuel cell by supplying the fuel cell with a cooling liquid via a cooling liquid passage by means of a water pump; an impurity-removing device which is provided in the cooling liquid passage and which removes impurities from within the cooling liquid; and flow generating means for causing the cooling liquid in the cooling liquid passage to flow through the impurity-removing device when the fuel cell is not operating.

A method of making a group III-V nitride-based semiconductor substrate has the steps of: providing a first crystal substrate; placing the first crystal substrate on a susceptor; holding down the first crystal substrate on the susceptor; and growing a first group III-V nitride-based semiconductor crystal on the first crystal substrate.

A display element includes: a pair of substrates, at least one of which is transparent; a medium, between the substrates, the medium being changeable in an optical anisotropy magnitude by and according to electric field application; and a region in which a pixel electrode and a counter electrode overlap with each other with an insulating layer therebetween.

The invention relates to a catalyst component for olefin (co)polymerization, to preparation thereof, to a catalyst comprising the same, and to use thereof in olefin (co)polymerization. The catalyst component of the invention comprises magnesium, titanium, halogen, inner electron donor compound, and alkoxy group derived from a surface modifier, wherein the content of the alkoxy group derived from the surface modifier is in a range of from 0.01 to 3 percent by weight, based on the weight of the catalyst component.

A silicon carbide substrate has a first main surface, and a second main surface opposite to the first main surface. A region including at least one main surface of the first and second main surfaces is made of single-crystal silicon carbide. In the one main surface, sulfur atoms are present at not less than 60×10¹⁰ atoms/cm² and not more than 2000×10¹⁰ atoms/cm², and carbon atoms as an impurity are present at not less than 3 at % and not more than 25 at %. Thereby, a silicon carbide substrate having a stable surface, a semiconductor device using the substrate, and methods for manufacturing them can be provided.

The invention discloses a synthetic method of cyclosulphate. A peroxysulfate solution is pre-synthesized through sulfuric acid and hydrogen peroxide, then under existence of an organic solvent, a metal inorganic compound and a catalyst, the peroxysulfate solution is dropwise added to generate a catalytic oxidation reaction with cyclosulfite, after the reaction is completed, salt residue is filtered out, still standing for layering is conducted, an organic layer is taken to be distilled, concentrated and purified, and a cyclosulphate high-quality product is obtained. According to the syntheticmethod of the cyclosulphate, the cheap sulfuric acid and hydrogen peroxide are used as the raw materials, the peroxysulfate solution is prepared to conduct catalytic oxidation on the cyclosulfite, onthe one hand, the reaction is mild, control is easy, and the reaction conversion rate is high; on the other hand, the evaporation capacity of water is small, energy consumption is low, generated wastewater is less, and a synthetic process is more environmentally friendly; and the prepared cyclosulphate is few in impurity, high in purity and wide in market prospect.

A cleaning composition for semiconductor components comprises a water-soluble polymer (a) having a specific molecular weight and a compound (b) represented by the following formula (1):

NR₄OH  (1)

wherein each R is independently a hydrogen atom or an alkyl group of 1 to 6 carbon atoms. A process for manufacturing a semiconductor device comprises chemical mechanical polishing a semiconductor component, and cleaning the semiconductor component with the cleaning composition for semiconductor components. The cleaning composition exerts a high cleaning effect on impurities remaining on a polished surface of a semiconductor component after chemical mechanical polishing, and becomes little burden on the environment.

In accordance with an embodiment of the present invention, a thyristor-based semiconductor memory device may comprise an array of thyristor-based memory formed in an SOI wafer. A supporting substrate may be formed with a density of dopants sufficient to assist delivery of a bias level to the backside of an insulating layer beneath a thyristor. Such conductivity within the substrate may allow reliable back-gate control for the gain of a component bipolar device of the thyristor.

The present invention relates to a method for causing sodium sulfide or a mixture of sodium sulfide and sulfur to react with diazonium salt formed by diazotizing anthranilic acid, wherein the Na/S atomic ratio as calculated on the basis of the employed sodium sulfide and sulfur is adjusted to within the range of 1.33 to 2.0 during the reaction. Thus is made practicable the manufacture of thiosalicylic acid in a high yield without going through the individual route of isolating and reducing dithiosalicylic acid.

A method for manufacturing a solar cell from a semiconductor substrate (1) of a first conductivity type, the semiconductor substrate having a front surface (2) and a back surface (3). The method includes in a sequence: texturing (102) the front surface to create a textured front surface (2a); creating (103) by diffusion of a dopant of the first conductivity type a first conductivity-type doped layer (2c) in the textured front surface and a back surface field layer (4) of the first conductivity type in the back surface; removing (105; 104a) the first conductivity-type doped layer from the textured front surface by an etching process adapted for retaining texture of the textured front surface; creating (106) a layer of a second conductivity type (6) on the textured front surface by diffusion of a dopant of the second conductivity type into the textured front surface.

A system for monitoring and controlling the deposition of thin films employed in semiconductor fabrication is provided. The system includes one or more acoustic and/or ultrasonic wave sources, each source directing waves onto one or more thin films deposited on a wafer. Waves reflected from the thin film is collected by a monitoring system, which processes the collected waves. Waves passing through the thin film may similarly be collected by the monitoring system, which processes the collected waves. The collected waves are indicative of the presence of impurities and/or defects in the deposited thin film. The monitoring system analyzes and provides the collected wave data to a processor, which determines whether adjustments to thin film deposition parameters are needed. The system also includes a plurality of thin film deposition devices associated with depositing thin films on the wafer. The processor selectively controls thin film deposition parameters and devices to facilitate regulating deposition.

A plasma display panel in which a first substrate having a protective layer formed thereon opposes a second substrate across a discharge space, with the substrates being sealed around a perimeter thereof. At a surface of the protective layer, first and second materials of different electron emission properties are exposed to the discharge space, with at least one of the materials existing in a dispersed state. The first and second materials may be first and second crystals, and the second crystal may be dispersed throughout the first crystal.

In a reverse conducting semiconductor device, which forms a composition circuit, a positive voltage that is higher than a positive voltage of a collector electrode may be applied to an emitter electrode. In this case, in a region of the reverse conducting semiconductor device in which a return diode is formed, a body contact region functions as an anode, a drift contact region functions as a cathode, and current flows from the anode to the cathode. When a voltage having a lower electric potential than the collector electrode is applied to the trench gate electrode at that time, p-type carriers are generated within the cathode and a quantity of carriers increases within the return diode. As a result, a forward voltage drop of the return diode lowers, and constant loss of electric power can be reduced. Electric power loss can be reduced in a power supply device that uses such a composition circuit in which a switching element and the return diode are connected in reverse parallel.

A method of regenerating adsorbent material includes providing a spent adsorbent material and contacting the adsorbent material with a solvent composition to facilitate removing oil and impurities from the spent solvent material.

The invention discloses a production process for a directly-spun terylene industrial filament of a liquid-phase tackifying fusant, belonging to the technical field of spinning. The production process includes the following steps: esterification, polycondensation, liquid-phase tackification and spinning. The production process is characterized in that: in a vertical reaction kettle, liquid-phase tackfication is carried out on the fusant obtained through esterification and polycondensation of glycol and phthalic acid; the vertical reaction kettle adopts a tower type film forming structure; the fusant enters the vertical reaction kettle from the top part for distribution, and the film forming is naturally finished under the action of gravity; a backflow pipeline is provided for the discharging of the reaction kettle, the viscosity and flow rate of the fusant are controlled by the backflow adjusting, the intrinsic viscosity of the polyester fusant after being tackified in a liquid-phase manner is within 0.85 to 1.0dl/g, and the fusant is conveyed to a spinning box body by a gear pump for spinning. By reasonably designing the reaction kettle and allocating the process, the invention effectively solves the consistency between the fusant reacting condition and the staying time; meanwhile, the consumption of a public medium is reduced, and the cost is lowered; by optimizing the process, the invention increases the production efficiency of a system and improves the product quality.

A method of manufacturing anti-bacteria polyamide fiber via high speed spinning disclosed a kind of method, which can make manufacturing anti-bacteria polyamide fiber via high-speed spinning realized, including the preparation of anti-bacteria particles and process of high-speed spinning. The preparation of anti-bacteria particles includes surface treatment of anti-bacteria agent and its process of preparation. Choose nano zeolite carrying silver ion as anti-bacteria agent, mix the anti-bacteria particles and polymer chips, after melting, produce anti-bacteria yarns via high speed spinning. The surface treatment to the anti-bacteria agent the invention can improve the spinnability of raw material and place foundation for realizing high speed spinning. Further more, for the spinning pack, adopt good quality mental powder as filtering and pressuring material and increase length diameter rate of hole of spinneret to lengthen the friction distance that the melt passing the spinneret holes in order to eliminate the inner energy of polymer, which prevent the melt from breaking cause by released inner energy while polymer bursting from the spinneret holes. The method described in the invention is simple and easy to implemented. High speed spinning realized by adopting this method, solve the problems of long process rout, low output and lower grade products caused by existing low-speed spinning and greatly increase the beneficial result of enterprise.