6 results about "Tetramethylsilane" patented technology

The present application relates to a kind of trimethylchlorosilane preparation system, including sequentially connected: feed unit, preheating unit, reaction unit and light removal unit;Feed unit, including hydrogen chloride purification device and tetramethylsilane mixture storage tank;Preheating unit: preheating unit includes preheater;Raw material tetramethylsilane mixture and hydrogen chloride gas are preheated after preheating unit and enter reaction unit;Reaction unit: including fixed bed reactor, raw material is reacted in reaction unit after preheating, and product is obtained;Light removal unit: including light removal tower, reaction product enters light removal tower, and the mixture containing target product trimethylchlorosilane of light component removal is obtained by rectification, separation.The present application is not consumed on the basis of other organosilicon monomer, utilizes the hydrogen chloride gas generated by methylchlorosilane hydrolysis TMS comprehensive utilization, is converted into trimethylchlorosilane, and trimethylchlorosilane content in product reaches 93% or more.

The application discloses a purification method of tetramethylsilane, which comprises the following steps: S1, pre-purification treatment is performed on tetramethylsilane raw materials to obtain tetramethylsilane crude product; S2, the tetramethylsilane crude product is mixed with a catalyst, heated, and catalytic reaction is generated so that isopentane in the tetramethylsilane crude product is converted into isoamylene to obtain an intermediate product; and S3, rectification treatment is performed on the intermediate product to remove isoamylene in the intermediate product, and purified tetramethylsilane is obtained. According to the purification method of tetramethylsilane, most of the easily separated impurities in the tetramethylsilane raw materials are removed through pre-purification treatment, then the tetramethylsilane crude product is mixed with a catalyst, and the difficult-to-separate isopentane impurities are converted into isoamylene under the catalytic action of the catalyst; the boiling point of isoamylene is greatly different from that of tetramethylsilane, so the isoamylene is removed through rectification, and finally the purified tetramethylsilane is obtained.

This invention provides a filter membrane and its preparation method. The preparation method includes the following steps: placing a porous filter membrane substrate in an environment containing plasma and a precursor, and performing plasma treatment to obtain the filter membrane; wherein the precursor includes at least one selected from hexamethyldisiloxane, perfluorooctyltriethoxysilane, pentane, ethylene, toluene, perfluorohexane, styrene, divinylbenzene, hexamethyldisiloxane, tetramethylsilane, tetraethoxysilane, tetrafluoroethylene, and hexafluoropropylene. The filter membrane obtained by this preparation method can significantly reduce the swelling rate and simultaneously increase the permeation flux in organic solvents, achieving precise molecular weight cutoff.

The invention discloses a tetramethylsilane purification device and method, and the device comprises a raw material pretreatment assembly which comprises a station for placing a crude TMS storage tank and a precision filter connected to a raw material pipe, and the station is provided with a heating device; the vaporization assembly is a vaporizer communicated with the raw material pipe of the raw material pretreatment assembly; the membrane separation assembly comprises a membrane assembly of a ZSM-5 molecular sieve membrane with height b-axis orientation, the b-axis orientation value of the ZSM-5 molecular sieve membrane in the membrane assembly is 0.90-95, the thickness of a separation layer is 1-3 microns, and a membrane carrier is an alpha-Al2O3 porous ceramic tube; an inlet of the membrane component is communicated with a vaporization outlet of the vaporization component; the condensation and collection assembly comprises a condenser communicated with a second connecting pipe on the permeation side of the membrane separation assembly and a product tank communicated with an outlet of the condenser; the tail gas storage device is communicated with the first connecting pipe on the interception side of the membrane separation assembly. The continuous purification of the TMS is realized, the energy consumption is reduced, and the purity is improved to an electronic grade.

The invention discloses an etching stop layer for reducing RC delay and a preparation method thereof, and the preparation method employs a plasma enhanced chemical vapor deposition method to carry out the following deposition steps: S1, depositing a first nitrogen-doped carbon-based material layer on the surface of a dielectric layer, and employing a combination of tetramethylsilane and ammonia gas as a first reaction gas; s2, depositing a second nitrogen-doped carbon-based material layer on the surface of the first nitrogen-doped carbon-based material layer, wherein the adopted second reaction gas is a combination of tetramethylsilane, ammonia gas and propylene; and S3, depositing a third nitrogen-doped carbon-based material layer on the surface of the second nitrogen-doped carbon-based material layer, wherein the adopted third reaction gas is a combination of tetramethylsilane and ammonia gas. The dielectric constant k of the whole NDC barrier layer such as a SiCN thin film can be reduced, and therefore RC delay is reduced.

The invention relates to the technical field of bolt manufacturing, in particular to a high-temperature-resistant and high-pressure-resistant bolt surface protection technology which comprises the following steps that after the surface of a high-temperature-resistant and high-pressure-resistant bolt is cleaned, the high-temperature-resistant and high-pressure-resistant bolt is loaded into a vacuum chamber, and argon ion bombardment cleaning is A chromium metal bonding layer is deposited on the surface of the high-temperature-resistant and high-pressure-resistant bolt; keeping a magnetron sputtering tungsten target, introducing acetylene gas into the vacuum chamber, and depositing a layer of gradient transition layer of which the composition is in smooth transition from pure tungsten to tungsten carbide on the surface of the chromium metal bonding layer of the high-temperature-resistant and high-pressure-resistant bolt; depositing a tungsten-silicon co-doped diamond-like functional layer on the gradient transition layer of the high-temperature-resistant and high-pressure-resistant bolt in mixed gas of acetylene and tetramethylsilane; and after deposition is finished, the high-temperature-resistant and high-pressure-resistant bolt is taken out after being cooled. The problems that the bolt is prone to seizure and poor in tolerance under high temperature and high pressure are effectively solved, and the service life of the high-temperature-resistant and high-pressure-resistant bolt is remarkably prolonged.