The invention discloses a deep purification method of
graphite, which comprises the following steps: placing
graphite in a double
glow plasma metallurgical furnace, and vacuumizing;
argon or
argon and
nitrogen are introduced, and the
vacuum pressure is maintained to be 20-100 Pa; and starting a double
glow plasma bias power supply, heating the
graphite to 2800 DEG C or above, preserving heat, and removing impurities through high-temperature physical gasification to achieve the required purity. According to the double
glow plasma metallurgy method, graphite is deeply purified, a double glow
plasma metallurgy furnace adopts ultra-pure graphite or a C / C
composite material as a source
electrode, a workpiece
electrode and an energy gathering ring, the graphite can be heated to 2800 DEG C or above through the
discharge effect of a hollow
cathode and the heat preservation and constraint effect of the energy gathering ring, heat preservation is conducted for a long enough time, and the graphite can be further purified.
Hydrogen and
halogen alkane gas are not adopted, impurities are removed only through a high-temperature physical gasification method, deep purification of graphite is achieved, the requirements for third-generation
semiconductor preparation and the like are met, equipment is simple,
tail gas does not need to be treated, and safety and environment friendliness are achieved.