Preparation method of nitrogen (N)-doped titanium dioxide (TiO2) porous film on surface of stainless steel matrix
A porous film, titanium dioxide technology, applied in the field of photocatalytic material preparation, can solve problems such as small specific surface area, small specific surface area of film, unfavorable photocatalytic performance, etc., to improve light absorption efficiency and adsorption capacity, good film-base bonding strength and visible light. The effect of catalytic performance
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Embodiment approach 1
[0020] (1) Put the 0Cr18Ni9 stainless steel substrate workpiece into a double-layer glow ion infiltration metal furnace, use a pure Ti plate as a sputtering target, use argon as a carrier gas and nitrogen as a reaction gas to perform Ti-N infiltration, and The process conditions of Ti-N infiltration are: the distance between the stainless steel workpiece and the sputtering target is 15 mm; the air pressure is 35 Pa, and the flow ratio of argon to nitrogen is 4:1; the sputtering target voltage is 1020 V; the stainless steel workpiece voltage is 540 V ; stainless steel workpiece temperature 900 ℃; penetration time 3 h.
[0021] (2) Use insulating glue to seal the surface of the stainless steel workpiece that is not impregnated with Ti-N, so that only the part coated with Ti-N film is exposed as the working surface, and the workpiece is placed in 1.0 wt% HF electrolyte as the anode, Pt The sheet is the cathode, turn on the magnetic stirring, and anodize at a DC voltage of 20 V at...
Embodiment approach 2
[0024] (1) Put the 1Cr13 stainless steel substrate workpiece into the double-layer glow ion metallization furnace, use pure Ti plate as the sputtering target, use argon as the carrier gas and nitrogen as the reaction gas to carry out Ti-N infiltration, and The process conditions of infiltrating Ti-N are: the distance between the stainless steel workpiece and the sputtering target is 18 mm; the air pressure is 45 Pa, and the flow ratio of argon to nitrogen is 8:1; the sputtering target voltage is 980 V; the stainless steel workpiece voltage is 500 V ; stainless steel workpiece temperature 860 ℃; penetration time 4 h.
[0025] (2) Use insulating glue to seal the surface of the stainless steel workpiece that is not coated with Ti-N, so that only the part coated with Ti-N film is exposed as the working surface, and the workpiece is placed in 1.5 wt% HF electrolyte as the anode, Pt The sheet is the cathode, turn on the magnetic stirring, and anodize at a DC voltage of 20 V at room ...
Embodiment approach 3
[0028] (1) Put the 00Cr17Ni14Mo2 stainless steel substrate workpiece into a double-layer glow ion infiltration metal furnace, use a pure Ti plate as a sputtering target, use argon as a carrier gas, and nitrogen as a reaction gas to perform Ti-N infiltration. The process conditions of Ti-N infiltration are: the distance between the stainless steel workpiece and the sputtering target is 16 mm; the air pressure is 40 Pa, and the flow ratio of argon to nitrogen is 1:1; the sputtering target voltage is 1100 V; the stainless steel workpiece voltage is 580 V ; stainless steel workpiece temperature 940 ℃; penetration time 2 h.
[0029] (2) Use insulating glue to seal the surface of the stainless steel workpiece that is not coated with Ti-N, so that only the part coated with Ti-N film is exposed as the working surface, and the workpiece is placed in 0.5 wt% HF electrolyte as the anode, Pt The sheet is the cathode, turn on the magnetic stirring, and anodize at a DC voltage of 30 V at ro...
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