89 results about "Junction formation" patented technology

The invention provides a method for detecting silicon single crystal COP free area distribution, and relates to the technical field of silicon single crystal quality detection.The method comprises the steps that a silicon wafer to be detected is cleaned to obtain a first silicon wafer; uniformly smearing a transition metal ion solution on the surface of the first silicon wafer to obtain a second silicon wafer; placing the second silicon wafer in a high-temperature environment, and performing heat treatment under three temperature gradients to obtain a third silicon wafer; wherein in the first stage, transition metal ions are diffused to the surface layer of the silicon wafer to activate oxygen precipitates in a Pv region, in the second stage, the transition metal ions are promoted to be diffused into the silicon wafer to develop a Pi low-oxygen region, and in the third stage, nuclei coalescence in a B-band region is activated at high temperature to form a differential arrangement ring; cleaning the third silicon wafer through a mixed acid solution to obtain a fourth silicon wafer; and placing the fourth silicon wafer in a preferential corrosion liquid for preferential corrosion, and carrying out COP free area distribution detection on the obtained detection sample wafer. According to the scheme, the definition of each region boundary can be improved, so that the detection accuracy of COP free region distribution is improved.

An optical modulator includes a substrate defining a plane and first, second, and third PN junctions formed on the substrate. The first PN junction is formed on the substrate by a first region doped with a p-type doping abutting a second region doped with an n-type doping. The second PN junction is formed on the substrate adjacent to the second region of the first PN junction. The third PN junction is formed on the substrate adjacent to the first region of the first PN junction.

According to the structure for reducing the area of the SQUID superconducting loop and the preparation method thereof provided by the invention, the laminated structure is formed on the silicon substrate, and then the laminated structure is accurately etched, so that the 3D nano bridge junction is formed on the slope surface of the laminated structure and stretches across the insulating layer, and therefore, batch preparation of the structure for reducing the area of the SQUID superconducting loop can be realized; according to the SQUID probe, large-scale application of the SQUID probe is more facilitated, the plane of the 3D nanometer bridge junction is perpendicular to the plane where the SQUID superconducting loop is located, so that the width of the 3D nanometer bridge junction does not influence the effective loop area of the SQUID any more, the performance of the SQUID can be improved by independently regulating and controlling the thickness of the 3D nanometer bridge junction, the inhibition effect of a magnetic field on the superconducting characteristic of the 3D nanometer bridge junction is greatly weakened, and in addition, the SQUID probe can be applied to a large scale. The SQUID superconducting loop with the minimum line width of 10nm can be prepared by combining the electron beam lithography technology with higher precision, the area of the SQUID superconducting loop can be greatly reduced, and the spin sensitivity is improved, so that higher spatial resolution can be realized during scanning magnetic imaging.

Examples herein relate to three-dimensional (3D) dynamic random access memory (DRAM) and corresponding methods. In an example, a stacked semiconductor structure is provided, where the stacked semiconductor structure includes a plurality of unit stacks formed on a substrate. Each unit stack has a semiconductor layer, a first dielectric layer, a first gate electrode, and a second dielectric layer of a capacitor portion. A lateral recess of the capacitor portion is open to a first opening through the unit stack. The method includes conformally depositing, in the lateral recess, a doped silicon layer on a lateral end of the semiconductor layer, performing a thermal annealing process after forming the doped silicon layer on the second lateral end. The method further includes forming a capacitor where the lateral recess was disposed, the capacitor contacting the doped silicon layer on the second lateral end of the semiconductor layer.

According to the superconducting quantum interference device based on the Josephson junction and the preparation method of the superconducting quantum interference device based on the Josephson junction, the manufacturing process of the Josephson junction is improved, and an organic cleaning process is added in the photoresist stripping process, so that the side wall formed by continuous stacking can be removed, the quality of a subsequently deposited film is improved, and the performance of the superconducting quantum interference device is improved. The SQUID output curve is not easy to generate resonance, and the yield of the SQUID batch preparation process is improved; on the basis of a traditional SQUID, each Josephson junction is additionally connected in series or in parallel with one Josephson junction to form the SQUID with four Josephson junctions, so that a larger output voltage modulation depth is obtained, the SQUID has higher sensitivity, lower noise and a larger linear range, a circuit is not prone to losing lock, and the SQUID has the advantages of being simple in structure, low in cost and high in reliability. A lengthy offset line does not need to be added, the problems of magnetic flux crosstalk, poor magnetic flux coherence and the like do not need to be worried about, and the layout structure design is simpler and more convenient.

An electrostatic discharge protection structure and a method for forming the same, comprising: a substrate including a first region and a plurality of second regions; a first well region located in the first region, having a first doping ion in the first well region; a second well region located in the second region, having a second doping ion in the second well region; a first gate structure located on the first region; a second gate structure located on the second region; a first doping layer and a second doping layer respectively located in the substrate on both sides of the second gate structure, having a first doping ion in the first doping layer and the second doping layer, the first doping layer and the second doping layer are respectively located in the second well region, and the first doping layer is further in contact with the first well region. By forming a reverse-biased junction at the junction of the first well region and the second well region, since the first gate structure is connected in series with the reverse-biased junction, the resistance value of the branch formed by the first gate structure and the reverse-biased junction is increased, thereby reducing the risk of the first gate structure being broken down, and thus improving the performance of the finally formed semiconductor structure.

The invention discloses a composite MOSFET photoelectric detector based on a mixed dimensional material, and belongs to the field of photoelectric detection. A built-in electric field in a PN junction at the top end of the detector enables a photon-generated carrier to be collected by graphene, so that a junction region carrier of a PN junction at the bottom end is influenced by high-k hexagonal boron nitride, and a light-driven MOSFET structure is formed; the PbSe quantum dots expand the detection wavelength range of the device. A built-in electric field formed by the PN junction at the bottom end enables photon-generated carriers to be separated and generate intrinsic response; the one-dimensional material can detect polarized light, has a small cross sectional area, and effectively inhibits dark current. Meanwhile, the two PN junctions can be controlled through the top grid electrode, so that the device works in an amplification region of the MOSFET, and the light response is linearly amplified. According to the invention, optical gating is effectively avoided, and a polarization, broadband, high-sensitivity and high-speed detector is realized.

The application discloses a method for realizing an integrated ultrahigh-temperature environmental barrier composite coating. After a high-entropy alloy or boride layer and a molybdenum metal pre-coating layer are pre-coated on the surface of a substrate, a silicon-boron co-embedding deposition is carried out through a pre-oxidation process to form an ordered Mo-Si-B multilayer structure in the molybdenum metal layer. A composite coating formed by a metal silicide and silicon dioxide is cold sprayed on the Mo-Si-B multilayer structure to form a three-dimensional network structure composite self-healing layer through high-temperature sintering. An alloy oxide is cold sprayed or magnetron sputtered outside the composite self-healing layer to form a water vapor resistant layer. Through the integrated coating preparation process, the advantages of different components are complementary, and the effective protection of various refractory alloys in a wide temperature range (room temperature-1700 DEG C) can be realized.

The present invention relates to a broad-area diode laser (BAL) comprising an integrated p-n tunnel junction. The present invention in particular relates to a high-performance broad-area diode laser in which, in order to improve the beam quality and to reduce the thermal resistance, a p-n tunnel junction, biased in the reverse direction, is integrated in the layer system of the diode laser.A laser diode according to the invention comprises an active layer (20) formed between an n-doped semiconductor material (10, 12, 14) and a p-doped semiconductor material (30, 32, 34), the active layer (20) forming, along a longitudinal axis, an active zone for generating electromagnetic radiation; wherein at least one n-doped intermediate layer (50, 54) is arranged between an overlying p-side metal contact (52) and the p-doped semiconductor material (30, 32, 34), and, in the at least one n-doped intermediate layer (50, 54) in the region above the active zone, a p-n tunnel junction (40) being formed which is directly adjacent to the p-doped semiconductor material (30, 32, 34).

The present application provides a photoelectric conversion device including: a semiconductor substrate; the P-type doped region and / or the N-type doped region are / is arranged in the semiconductor substrate, and a PN junction formed by the P-type doped region and the N-type doped region forms a corresponding depletion region; or the semiconductor substrate and the PN junction formed by the P-type doped region or the N-type doped region form corresponding depletion regions; the depletion region adjusting structure is arranged in the semiconductor base material and used for limiting expansion of the depletion region, the semiconductor base material comprises a silicon substrate on an insulator and an epitaxial layer growing on the silicon substrate on the insulator, the silicon substrate on the insulator comprises top silicon, an oxide layer and bottom silicon which are sequentially stacked, and the top silicon, the oxide layer and the bottom silicon are sequentially stacked. The epitaxial layer grows from the top layer silicon and is obtained by highly doping the top layer silicon as a highly doped region of the depletion region adjusting structure. The invention further provides a photoelectric sensing device and a manufacturing method.

Methods and structures are presented for mitigating back gate effects in a radio frequency (RF) silicon-on-insulator (SOI) substrate RF-SOI. According to one aspect, a first implant or junction is formed in a region of a trap-rich layer (TRL) of the RF-SOI underlying a first circuit / device to be protected. The first implant or junction is contained entirely within the TRL. The planar surface region of the first implant and / or junction completely contains a projection of the planar surface region of the first circuit and / or device. The first implant or junction is biased via a through-BOX contact (TBC) that penetrates the BOX layer at a shallow trench isolation region formed in the RF-SOI. According to another aspect, a second implant or junction is formed in the region of the TRL underneath the second circuit / device. The first implant or junction and the second implant or junction are disconnected and separated by an undoped region of the TRL.

The present disclosure is directed to a structure of an optical modulator and a method of forming the structure. The structure includes first, second, third, and fourth doped regions forming a C-shaped P-N junction in an optical waveguide. The method of forming the structure includes applying a first mask to form the first doped region by implanting dopants of a first type on a side surface of the optical waveguide. The method further includes applying a second mask to form the second, third, and fourth doped regions at different depths under a top surface of the optical waveguide by implanting dopants of the first type and a second type. The P-N junction formed by the method is self-aligned and immune to inline overlay and critical dimensions of the first and second masks, providing an improved profile of the P-N junction and a reliable and consistent product.

According to the silicon-based PIN photodiode, the manufacturing method and the electronic device provided by the invention, the FZ single crystal is adopted as the substrate, and the doped region is formed in an ion implantation and annealing mode, so that the junction depth and the concentration can be effectively controlled. And thinning the silicon wafer by adopting a Taiko back thinning process. The photosensitive area adopts a shallow junction and deep junction combined structure, the shallow junction can increase the blue light absorption rate, and the deep junction forms ohmic contact. The anti-reflection layer adopts a silicon dioxide and silicon nitride double-layer structure, so that the surface stress of silicon / silicon nitride can be effectively relieved, and the reliability is improved. The cut-off region N + and the back N + can reduce dark current, and back metallization can form a back cathode.

Methods and structures are presented for mitigating back-gating effects in radio frequency (RF) silicon-on-insulator (SOI) substrates, RF-SOI. According to an aspect, a first implant or junction is formed in a region of a trap-rich layer (TRL) of the RF-SOI beneath a first circuit / device to be protected. The first implant or junction is entirely contained within the TRL. A planar surface area of the first implant and / or junction entirely contains a projection of a planar surface area of the first circuit and / or device. The first implant or junction is biased via a through-BOX contact (TBC) that penetrates a BOX layer at a shallow trench isolation region formed in the RF-SOI. According to another aspect, a second implant or junction is formed in a region of the TRL beneath a second circuit / device. The first implant or junction and the second implant or junction are not connected and are separated by an undoped region of the TRL.

Approaches herein provide devices, systems, and methods of transistor patterning using a frontside implant plus epitaxial process to form a graded junction having a high surface doping concentration for a vertical contact transistor bitline. One method may include delivering ions into a front side of a substrate of a transistor to form a graded junction in the substrate, wherein the substrate is maintained at a temperature greater than 100° C. while the ions are delivered into the substrate, and thermally treating the graded junction. The method may further include forming, after the graded junction is thermally treated, an epitaxial layer over the graded junction, forming a plurality of gates in the epitaxial layer, and processing a backside of the substrate to remove the substrate to the graded junction following formation of the plurality of gates.

The application provides a vertical semiconductor structure with integrated sampling structure and a manufacturing method thereof. The vertical semiconductor structure with integrated sampling structure comprises a vertical semiconductor structure cell, a sampling cell, a control electrode, a first electrode, a second electrode and a sampling electrode. According to an embodiment of the application, firstly, the sampling electrode can sample the voltage difference between the first electrode and the second electrode in real time; a PN junction is formed between the first / two P-type diffusion regions and the second N-type base region of the sampling cell, and the PN junction forms a potential barrier for blocking the electron emission of the sampling electrode, so that the voltage signal of the sampling electrode is input to a protection circuit, and the protection circuit can safely and quickly detect whether the vertical semiconductor structure is in a desaturation state when judging that the vertical semiconductor structure cell is in an open state. Secondly, a sampling resistor is connected in series between the sampling electrode and the first electrode, and the positive voltage of the sampling electrode can increase the height of the potential barrier, so as to ensure the stable work of the sampling cell.

The invention relates to a single photon avalanche diode and an image sensing device including the same. A single photon avalanche diode (SPAD) and an image sensing device are disclosed. In an embodiment, a single photon avalanche diode (SPAD) includes: an impurity junction region configured to include a plurality of depletion regions, where each depletion region is a junction formed between a first doped region doped with an impurity of a first conductivity type and a second doped region doped with an impurity of a second conductivity type; an output node formed over the impurity junction region and in contact with one surface of the substrate; a guard ring region formed to surround the impurity junction region; and a bias node spaced apart from the guard ring region and disposed on one side of the guard ring region.

A semiconductor device includes a device region, including a source contact, a drain contact formed on a substrate, and a gate contact formed between the source contact and the drain contact; an isolation region surrounding the device region, the isolation region including an N-type semiconductor region formed on the substrate, a first silicide layer and a second silicide layer formed in the N-type semiconductor region and separated from each other by an isolation layer, and an anode contact and a cathode contact connected to the first silicide layer and the second silicide layer, respectively; and a Schottky barrier diode formed inside the isolation region by a junction of the first silicide layer and the N-type semiconductor region. The anode contact is connected to the source contact, and the cathode contact is connected to the drain contact.

One or more gated nanosheet diodes are disposed on a substrate and made from a nanosheet structure. A first (second) source / drain (S / D) is disposed on the substrate. The first (second) S / D has a first (second) S / D doping concentration of a first (second) S / D doping type. One or more p-n junctions form one or more respective diodes. Each of the p-n junctions has a first side and a second side. The first (second) side of the p-n junction is electrically and physically connected to the first (second) S / D and has a same type of doping, respectively. A gate stack made from a gate dielectric layer and a gate metal interfaces and surrounds each of the p-n junctions.

The invention relates to the technical field of semiconductor devices, and provides a groove type silicon carbide MOSFET device and a construction method. The device comprises a substrate, an epitaxial layer and a grid electrode. The epitaxial layer comprises a bottom screen junction and a side screen junction, and the bottom of the side screen junction is connected with the bottom screen junction in a staggered mode to form grid staggering. The epitaxial layer is provided with a groove, the connecting position of the side wall and the bottom of the groove is in an arc shape, the bottom of the groove is sunken in the bottom screen junction, and the groove is located between the side screen junctions. Through a three-dimensional grid shielding system formed by the bottom screen junction and the side screen junction, surrounding type shielding can be formed on the gate region below the bottom and the side wall of the groove, the peak electric field intensity borne by the gate oxide layer under high voltage is dispersed and reduced to the maximum extent, and the voltage endurance capability and the gate oxide reliability of the device are remarkably improved.

The utility model discloses a Josephson junction, a quantum circuit, a quantum chip and a quantum computer. The Josephson junction is formed on a substrate, the substrate is provided with a first area, a second area and a third area, the second area and the third area are located on the two sides of the first area, and the Josephson junction comprises a first superconducting plate extending from the second area to the first area and a second superconducting plate extending from the third area to the first area. The first superconducting plate and the second superconducting plate are at least partially overlapped in the first region to form a first junction region, and a barrier layer is clamped in the first junction region; the first superconducting tape is connected with the first superconducting plate in the second area; the second superconducting tape is connected with the second superconducting plate in the third area; and the first superconducting tape and the second superconducting tape both avoid the first area. According to the utility model, the relevance between the area of the Josephson junction and the width of the superconducting tape can be eliminated, so that the junction area design of the Josephson junction is more flexible, and the influence of the width of the superconducting tape does not need to be considered.

The present invention relates to the field of MOS semiconductor technology, and discloses a high-voltage silicon carbide power MOSFET terminal structure, including a MOS cell structure located in the middle and a terminal structure located at the end, wherein the MOS cell structure and the terminal structure are both composed of a drain, a metal source and a semiconductor epitaxial layer, wherein the semiconductor epitaxial layer includes a substrate layer and a diffusion layer; the MOS cell structure includes a gate, a gate oxide layer covered on the gate surface, an N-well layer, a highly doped P-well layer 2 and a low-doped P-well layer 1, and the terminal structure is composed of a main junction and a junction terminal extension JTE; the junction terminal extension JTE includes a JTE region located at the surface of the diffusion layer. The present invention introduces multiple inner isolation rings as isolation rings in the main junction, which can block the current path formed by charging and discharging during the device switching process, prevent the formation of a strong electric field and leakage current at the main junction, and avoid the risk of damage to the device during high-speed switching.

The present invention provides a semiconductor element with a diode and a silicon-controlled rectifier, comprising: a substrate with a first conductivity type, a well region with a second conductivity type, a first doped region with the first conductivity type, and a second doped region with the second conductivity type. The well region is arranged in the substrate. The first doped region is arranged in the substrate. The second doped region is arranged in the substrate. The well region and the first doped region form a first PN junction, the well region and the substrate form a second PN junction, and the substrate and the second doped region form a third PN junction. The first PN junction, the second PN junction, and the third PN junction form a silicon-controlled rectifier, and the first doped region and the third PN junction form a diode.

An electrostatic discharge protection structure and a method for forming the same, comprising: a substrate including a first region and a plurality of second regions; a first well region located in the first region, having a first doping ion in the first well region; a second well region located in the second region, having a second doping ion in the second well region; a plurality of first gate structures located on the first region; a second gate structure located on the second region; a first doping layer in the substrate between adjacent first gate structures; a second doping layer and a third doping layer in the substrate on both sides of the second gate structure respectively. Since the electrical types of the second doping ion and the first doping ion are different, a reverse-biased junction is formed at the junction of the first well region and the second well region. Since the first gate structure is serially connected to the reverse-biased junction through the first well region, the resistance value of the branch formed by the first gate structure and the reverse-biased junction is increased, thereby reducing the risk of the first gate structure being broken down, and thus improving the performance of the finally formed semiconductor structure.

Provided in the present application are a solar cell, a manufacturing method therefor and a photovoltaic module. The solar cell comprises: an N-type substrate (1); an N-type diffusion layer (2) on a light-receiving surface of the N-type substrate (1); a patterned first passivated contact structure (3) on the N-type diffusion layer (2), the patterned first passivated contact structure (3) comprising a first dielectric layer (31) having a thickness of less than or equal to 2 nm and an N-type doped polycrystalline silicon layer (32); and a second passivated contact structure (4) on a backside surface of the N-type substrate (1), the second passivated contact structure (4) comprising a second dielectric layer (41) having a thickness of greater than 2 nm and a P-type heavily doped polycrystalline silicon layer (42), a PN junction being formed on the backside surface, the second dielectric layer (41) having a through hole (411), and the doping concentration of the P-type heavily doped polycrystalline silicon layer (42) being 5×1018 to 3×1020 atoms / cm3. A first functional layer (5) and a first electrode (7) are sequentially provided on the N-type diffusion layer (2) and the first passivated contact structure (3), and a second functional layer (6) and a second electrode (8) are sequentially provided on the P-type heavily doped polycrystalline silicon layer (42).

Ultra-low voltage trigger device, including a back metal electrode, a P+ substrate layer, an N-type epitaxial layer, an insulating dielectric layer, and a front metal layer from bottom to top in sequence. A P+ isolation layer, an N+ polysilicon, and a P-type base region are arranged in sequence from one side to the other side of the end face of the N-type epitaxial layer; the P+ isolation layer penetrates through to the P+ substrate layer; P+ source regions and N+ source regions are arranged in both the N+ polysilicon and the P-type base region. A manufacturing method of the ultra-low voltage trigger device includes the following steps: depositing an N-type epitaxial layer; performing high-temperature diffusion to form a P+ isolation layer; depositing N+ polysilicon to expose the N-type epitaxial layer; pushing the junction to form a P-type base region; in the regions of the N+ polysilicon and the P-type base region, forming P+ source regions, and then performing photolithography and injecting high-concentration N-type impurities to form N+ source regions; depositing an insulating dielectric layer and completing the front metal layer; depositing the back metal electrode. The present invention effectively reduces costs and trigger voltage, and has an ultra-low trigger voltage and a strong charge discharge capacity.

The application discloses a kind of composite MOSFET photoelectric detectors based on mixed-dimensional material, belong to photoelectric detection field.The built-in electric field in the top PN junction of the detector makes a kind of photo-generated carrier be collected by graphene, so as to influence the junction carrier of bottom PN junction by high-k hexagonal boron nitride, and a MOSFET structure driven by light is formed;PbSe quantum dots expand the wavelength range of the device.The built-in electric field formed by bottom PN junction makes photo-generated carrier separate and produce intrinsic response;One-dimensional material can detect polarized light, and the cross-sectional area is small, effectively suppresses dark current.At the same time, the two PN junctions can be controlled by the top gate, so that the device works in the amplification zone of MOSFET, and the light response is linearly amplified.The application effectively avoids the occurrence of light gating, realizes polarization, wide band, high sensitivity, high-speed detector.

The invention provides a ceramic glaze composition, a preparation method of a semiconductor equipment part, the semiconductor equipment part and semiconductor equipment. The preparation method comprises the following steps: providing a first melting material, a second melting material and a semiconductor equipment part body; the first melting material comprises Al2O3, a corrosion-resistant additive and SiO2; the second melting material comprises SiO2, SiC and boride; respectively melting the first melting material and the second melting material, and uniformly mixing to obtain a ceramic glaze composition; applying a ceramic glaze composition to enable the ceramic glaze composition to at least cover part of the surface of the semiconductor equipment part body; and sintering to form a ceramic glaze layer on the surface of the semiconductor equipment part body. The mixed melting material is applied to the surface of the semiconductor equipment part body, and then the ceramic glaze layer is formed through high-temperature sintering, so that compared with a traditional anodic oxidation layer, the corrosion resistance is improved, the breakdown voltage resistance is improved, and the thermal cycle performance is also obviously improved.

The utility model discloses a kind of three-dimensional combined sealing structures of heterogeneous chip based on die attach film, it is related to the field of semiconductor packaging technology, including middle layer substrate, the double-sided integration RDL layer of middle layer substrate, and the position of middle layer substrate corresponding RDL layer is formed LCV copper via by laser drilling;The upper of middle layer substrate is respectively provided with display drive IC and touch sensor IC, and display drive IC and touch sensor IC are formed with micro copper column bump on the side close to middle layer substrate, the utility model, by adopting flexible polyimide substrate as the interlayer of carrier, double-sided rewiring, form micro via array by laser drilling, inner wall fills nano copper paste, LCV copper via is formed by low-temperature sintering;Upper chip is flip-chip soldered on die attach film circuit by micro copper column bump, interconnection is realized by the wiring on die attach film, and NCF is filled in the gap between upper chip and interlayer;Lower substrate pad is directly interconnected with die attach film circuit by LCV copper via.

The invention provides a superconducting quantum bit coupling structure, a superconducting quantum chip and a quantum computer, and relates to the technical field of quantum. The superconducting quantum bit coupling structure comprises a first superconducting quantum bit, a second superconducting quantum bit and a coupler, the first superconducting quantum bit is connected with a first node of the coupler through a first bypass capacitor, and the second superconducting quantum bit is connected with a second node of the coupler through a second bypass capacitor; the first Josephson junction and the third bypass capacitor of the coupler meet a target condition, so that when the magnetic flux in a first loop formed by the first Josephson junction, the second Josephson junction and the third Josephson junction of the coupler is 0, the coupling between the first superconducting quantum bit and the second superconducting quantum bit is closed. Therefore, the problem of crosstalk caused by short distance of the quantum bits in the prior art can be solved, coupling closing between the quantum bits when the magnetic flux is 0 is realized, and the precision requirement of magnetic flux regulation and control is reduced.