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Preparation method of P-type crystal silicon double-sided cell

A double-sided battery and crystalline silicon technology, which is applied in semiconductor/solid-state device manufacturing, circuits, photovoltaic power generation, etc., can solve the problems of high production cost and restricted application range, so as to improve utilization rate, increase power generation, and avoid high temperature mixing The effect of the hashing and masking process

Inactive Publication Date: 2014-03-19
ALTUSVIA ENERGY TAICANG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the high production cost restricts its application range, and with the sharp reduction of government subsidies, reducing the production cost of cells and improving power generation efficiency has become an urgent issue for manufacturers

Method used

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  • Preparation method of P-type crystal silicon double-sided cell

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Embodiment 1

[0028] A method for preparing a P-type crystalline silicon double-sided battery, the method comprising the following steps:

[0029] (a) P-type silicon substrate texturing:

[0030] Select a P-type silicon wafer with a resistivity of 0.3 ? Dilute about 5% hydrochloric acid and hydrofluoric acid for cleaning to remove surface impurities;

[0031] (b) Phosphorus is diffused on the front surface of the P-type silicon substrate to form a PN junction:

[0032] In a diffusion furnace at a temperature of 600°C, using POCl 3 Perform phosphorus diffusion to make the square resistance range 40-120? / □;

[0033] (c) Removal of phosphosilicate glass, back PN junction, and side PN junction:

[0034] In single-side etching equipment, use a mixed solution of 5% hydrofluoric acid and 50% nitric acid to etch the back surface and edge of the silicon wafer;

[0035] (d) Anti-reflection coating deposited on both sides:

[0036] On the front surface of the substrate, that is, on the side of t...

Embodiment 2

[0044] A method for preparing a P-type crystalline silicon double-sided battery, the method comprising the following steps:

[0045] (a) P-type silicon substrate texturing:

[0046] Select a P-type silicon wafer with a resistivity of 5??cm, and use 1.0% potassium hydroxide solution to chemically etch the surface of the P-type single crystal silicon at 80°C to prepare a pyramid-shaped light-trapping structure texture, and then use Dilute about 10% hydrochloric acid and hydrofluoric acid for cleaning to remove surface impurities;

[0047] (b) Phosphorus is diffused on the front surface of the P-type silicon substrate to form a PN junction:

[0048] In a diffusion furnace at a temperature of 800°C, using POCl 3 Perform phosphorus diffusion to make the square resistance range 40-120? / □;

[0049] (c) Removal of phosphosilicate glass, back PN junction, and side PN junction:

[0050] In single-side etching equipment, use a mixed solution of 10% hydrofluoric acid and 60% nitric acid...

Embodiment 3

[0060] A method for preparing a P-type crystalline silicon double-sided battery, the method comprising the following steps:

[0061] (a) P-type silicon substrate texturing:

[0062] Select a P-type silicon wafer with a resistivity of 10??cm, and use 2.0% sodium hydroxide solution to chemically etch the surface of the P-type single crystal silicon at 85°C to prepare a pyramid-shaped light-trapping structure texture, and then use Dilute about 10% hydrochloric acid and hydrofluoric acid for cleaning to remove surface impurities;

[0063] (b) Phosphorus is diffused on the front surface of the P-type silicon substrate to form a PN junction:

[0064] In a diffusion furnace at a temperature of 900°C, using POCl 3 Perform phosphorus diffusion to make the square resistance range 40-120? / □;

[0065] (c) Removal of phosphosilicate glass, back PN junction, and side PN junction:

[0066] In single-side etching equipment, use a mixed solution of 15% hydrofluoric acid and 70% nitric acid...

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Abstract

The invention discloses a preparation method of a P-type crystal silicon double-sided cell. The preparation method comprises the following steps of felting and chemical cleaning, PN junction formation, antireflection film deposition performed on two sides, film splitting performed on a back surface, cell positive and negative pole preparation and sintering. Compared with the prior art, and according to the preparation method of the P-type crystal silicon double-sided cell of the invention, only one-time doping is required, and therefore, a preparation process can be simpler; and original processes such as frequent high-temperature doping and mask manufacture can be avoided, and therefore, preparation steps can be simplified, and preparation cost can be saved. The double-sided cell prepared by using the preparation method provided by the technical schemes of the invention can fully utilize scattered light of sunlight on the ground, and therefore, the utilization rate of the sunlight can be improved, power generation amount of the cell can be increased.

Description

Technical field [0001] The invention is a solar cell manufacturing field, which involves a preparation method of a P -type crystal silicon double -sided battery. Background technique [0002] In the context of increasingly prominent energy, resource shortages, and environmental pollution, the use of natural resources solar power generation has been used as a countermeasure for solving the problem of global warming and depletion of fossil fuel, which is favored by countries around the world.However, higher production costs restrict their application scope, and as government subsidies have been greatly reduced, reducing the production cost of battery films, and improving the efficiency of power generation has become an imminent issue for various manufacturers.Double -sided batteries can be fully used in sunlight, not only the positive sunlight, but also the scattered light on the back, etc., which improves the battery power generation.And this kind of battery is more suitable for b...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCH01L21/223H01L31/1804Y02E10/547Y02P70/50
Inventor 孙海平高艳涛杨灼坚邢国强
Owner ALTUSVIA ENERGY TAICANG
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