SOI base-based low-leakage and low-capacitance TVS array and preparation method thereof

Abstract

The invention relates to an SOI base-based low-leakage and low-capacitance TVS array and a preparation method thereof. The SOI base-based low-leakage and low-capacitance TVS array comprises an n-type SOI base, a p+ region, an n+ region, a p region, a silicon nitride isolator and an electrode, wherein the n-type SOI base is formed by a three-layer structure of an Si substrate, an SiO<2> layer and an n-type Si layer; and highly doped PN junctions are formed on P-type and / N-type SI substrates through diffusion or ion implantation to form a PN junction region and a central TVS region. Compared with a TVS device in the prior art, according to the SOI base-based low-leakage and low-capacitance TVS array, the stray capacitance and the leakage current of the device are effectively reduced; the power consumption of the device is reduced; and the performance of the device is further improved.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to a low-leakage and low-capacity TVS device of an SOI substrate and a preparation method thereof. Background technique [0002] Silicon on Insulator (Silicon on Insulator, SOI) material has a unique material structure different from bulk silicon, thus overcoming many shortcomings of bulk silicon materials, such as eliminating latch-up effects, reducing parasitic capacitance, reducing leakage current, and weakening short channels. effect etc. Therefore, semiconductor devices made of SOI as a substrate material can be widely used in aerospace fields with high speed, low power consumption, high temperature and high reliability requirements. The current mainstream SOI material preparation technologies mainly include: oxygen injection isolation technology (SIMOX), bonding and backside etching (BESOI) technology, smart-cut technology (Smart-Cut) technology, NanoCleave technology and porous sili...

AI Technical Summary

Problems solved by technology

[0008] Another disadvantage of TVS prepared by the traditional process is the large leakage current. Usually TVS diodes work in a reverse bias state. When the reverse voltage at both ends of the TVS is lower than the avalanche breakdown voltage of the PN junction diode material, tunneling often occurs. Piercing effect, causing tunnel breakdown, making the reverse leakage current in μA level

When protection devices are used in handheld devices, smartphones, and smart wearable devices, large leakage currents will seriously affect the standby time of electronic devices and cause thermal effects, which will not only affect the reliability of TVS devices themselves, but also affect the normal operation of electronic devices. use

Images