The invention discloses a low-
voltage ESD protection device and a manufacturing method thereof, which effectively improve the
utilization rate of a
chip and reduce the cost of the
chip. The
cell sizeis not increased, the
chip area occupation caused by keeping the
metal spacing is reduced, the
cell size can be reduced by about 20%, and the current
discharge capacity is at least improved by 50%; flyback current of the SCR can be reduced to 1.5 V by adopting a forward bias
diode string, and ultralow trigger
voltage ESD protection devices with
voltage classes of 1.2V, 1.8V, 2V, 2.5V, 2.8V, 3.3V and the like can be realized by adjusting the number of forward bias diodes; by optimizing the device size and the ultralow
residual voltage, the device is suitable for ultra-high-speed
signal protection of a low-voltage
system, meanwhile, bidirectional ESD protection can be achieved through
layout optimization, and a solution is provided for bidirectional protection of ultra-high-speed signals ofthe low-voltage
system.