Wafer processing chamber liner and wafer processing chamber comprising same

Abstract

The internal lining comprises: inner side wall, outer side wall. The inner side wall is connected to the outer side wall through a shielding plate; the upper edge of the outer side wall is connected to a flange; the edge of side wall is connected to an extended part; said extended part comprises the part extending to upper direction of the outer side wall, the lower edge of the outer side wall, and the lower edge of the inner side wall.

Description

technical field [0001] The invention relates to a semiconductor processing equipment component, in particular to a wafer processing chamber and its lining. Background technique [0002] In semiconductor manufacturing, plasma etching of wafers is typically performed within a process chamber. One problem with plasma etching is that when many wafers are etched in a chamber, over time a film builds up on the walls of the chamber. This film buildup can cause problems in two ways: First, the film can peel off walls and infiltrate particles into the process chamber. As the device dimensions of integrated circuit devices continue to decrease, the presence of such particles during handling can increase the scrap rate of wafers. Second, the film can alter the RF ground path and thus affect the resulting wafer. [0003] In order to avoid this from happening, the chamber must be wet-cleaned periodically to wipe down the walls of the chamber to remove film buildup. However, because i...

AI Technical Summary

Problems solved by technology

One problem with plasma etching is that when many wafers are etched in a chamber, over time a film builds up on the chamber walls

This film buildup can cause two problems: First, the film can peel off walls and infiltrate particles into the process chamber

[0006] Although the inner lining can effectively protect the inner wall of the processing chamber and the side of the wafer seat, reduce the generation of thin film accumulation, and then reduce particle pollution, the range of protection of this inner lining structure is too narrow, and it can only be used for the reaction chamber above the shielding plate 4. Chamber for protection, unable to effectively protect the adjustment bracket below the quartz window and the pumping chamber below the shielding plate, and unable to avoid the generation of particles to the greatest extent, resulting in contamination on the wafer

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